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                                       Details for article 25 of 32 found articles
 
 
  Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
 
 
Title: Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Author: Ngo, Thi Huong
Comyn, Rémi
Chenot, Sébastien
Brault, Julien
Nemoz, Maud
Vennéguès, Philippe
Damilano, Benjamin
Vézian, Stéphane
Frayssinet, Eric
Cozette, Flavien
Defrance, Nicolas
Lecourt, François
Labat, Nathalie
Maher, Hassan
Cordier, Yvon
Appeared in: Journal of crystal growth
Paging: Volume 593 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 25 of 32 found articles
 
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