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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors |
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Titel: |
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors |
Auteur: |
Ngo, Thi Huong Comyn, Rémi Chenot, Sébastien Brault, Julien Nemoz, Maud Vennéguès, Philippe Damilano, Benjamin Vézian, Stéphane Frayssinet, Eric Cozette, Flavien Defrance, Nicolas Lecourt, François Labat, Nathalie Maher, Hassan Cordier, Yvon |
Verschenen in: |
Journal of crystal growth |
Paginering: |
Jaargang 593 () nr. C pagina's p. |
Jaar: |
2022 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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