| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure
|
Gusev, A. I.
|
|
2016
|
50 |
5 |
p. 682-687
|
artikel
|
| 2 |
A new simulation model for inhomogeneous Au/n-GaN structure
|
Kavasoglu, Nese
|
|
2016
|
50 |
5 |
p. 616-620
|
artikel
|
| 3 |
Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications
|
Bodnar, I. V.
|
|
2016
|
50 |
5 |
p. 567-571
|
artikel
|
| 4 |
Atomic steps on an ultraflat Si(111) surface upon sublimation
|
Sitnikov, S. V.
|
|
2016
|
50 |
5 |
p. 596-600
|
artikel
|
| 5 |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
|
Popov, V. P.
|
|
2016
|
50 |
5 |
p. 632-638
|
artikel
|
| 6 |
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM
|
Stefanovich, G. B.
|
|
2016
|
50 |
5 |
p. 639-645
|
artikel
|
| 7 |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
|
Sokolova, Z. N.
|
|
2016
|
50 |
5 |
p. 667-670
|
artikel
|
| 8 |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide
|
Il’in, A. S.
|
|
2016
|
50 |
5 |
p. 607-611
|
artikel
|
| 9 |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
|
Vexler, M. I.
|
|
2016
|
50 |
5 |
p. 671-677
|
artikel
|
| 10 |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
|
Kozlovskiy, V. I.
|
|
2016
|
50 |
5 |
p. 688-693
|
artikel
|
| 11 |
GaAs/InGaAsN heterostructures for multi-junction solar cells
|
Nikitina, E. V.
|
|
2016
|
50 |
5 |
p. 652-655
|
artikel
|
| 12 |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
|
Levinshtein, M. E.
|
|
2016
|
50 |
5 |
p. 656-661
|
artikel
|
| 13 |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon
|
Gusev, O. B.
|
|
2016
|
50 |
5 |
p. 627-631
|
artikel
|
| 14 |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
|
Sobolev, V. V.
|
|
2016
|
50 |
5 |
p. 572-578
|
artikel
|
| 15 |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
|
Zhukov, A. E.
|
|
2016
|
50 |
5 |
p. 662-666
|
artikel
|
| 16 |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
|
Virko, M. V.
|
|
2016
|
50 |
5 |
p. 699-704
|
artikel
|
| 17 |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
|
Egorov, A. Yu.
|
|
2016
|
50 |
5 |
p. 612-615
|
artikel
|
| 18 |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
|
Il’inskaya, N. D.
|
|
2016
|
50 |
5 |
p. 646-651
|
artikel
|
| 19 |
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites
|
Mamedov, H. A.
|
|
2016
|
50 |
5 |
p. 621-626
|
artikel
|
| 20 |
Radiation-stimulated processes in transistor temperature sensors
|
Pavlyk, B. V.
|
|
2016
|
50 |
5 |
p. 678-681
|
artikel
|
| 21 |
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon
|
Guk, I. V.
|
|
2016
|
50 |
5 |
p. 694-698
|
artikel
|
| 22 |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
|
Aleshkin, V. Ya.
|
|
2016
|
50 |
5 |
p. 586-589
|
artikel
|
| 23 |
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
|
Alpatov, A. V.
|
|
2016
|
50 |
5 |
p. 590-595
|
artikel
|
| 24 |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films
|
Avilov, V. I.
|
|
2016
|
50 |
5 |
p. 601-606
|
artikel
|
| 25 |
X-ray conductivity of ZnSe single crystals
|
Degoda, V. Ya.
|
|
2016
|
50 |
5 |
p. 579-585
|
artikel
|
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