On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Titel:
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Auteur:
Virko, M. V. Kogotkov, V. S. Leonidov, A. A. Voronenkov, V. V. Rebane, Yu. T. Zubrilov, A. S. Gorbunov, R. I. Latyshev, P. E. Bochkareva, N. I. Lelikov, Yu. S. Tarhin, D. V. Smirnov, A. N. Davydov, V. Yu. Shreter, Yu. G.