| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
|
Bagraev, N. T.
|
|
2016
|
50 |
10 |
p. 1333-1337
|
artikel
|
| 2 |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells
|
Novikov, G. F.
|
|
2016
|
50 |
10 |
p. 1344-1351
|
artikel
|
| 3 |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
|
Tsatsulnikov, A. F.
|
|
2016
|
50 |
10 |
p. 1383-1389
|
artikel
|
| 4 |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen
|
Bochkareva, N. I.
|
|
2016
|
50 |
10 |
p. 1369-1376
|
artikel
|
| 5 |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions
|
Aliev, F. F.
|
|
2016
|
50 |
10 |
p. 1273-1279
|
artikel
|
| 6 |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
|
Kunitsyna, E. V.
|
|
2016
|
50 |
10 |
p. 1403-1407
|
artikel
|
| 7 |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
|
Khabibullin, R. A.
|
|
2016
|
50 |
10 |
p. 1377-1382
|
artikel
|
| 8 |
First-principles calculations of the electronic and structural properties of GaSb
|
Castaño-González, E.-E.
|
|
2016
|
50 |
10 |
p. 1280-1286
|
artikel
|
| 9 |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
|
Khvostikov, V. P.
|
|
2016
|
50 |
10 |
p. 1338-1343
|
artikel
|
| 10 |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation
|
Tomosh, K. N.
|
|
2016
|
50 |
10 |
p. 1416-1420
|
artikel
|
| 11 |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
|
Zubov, F. I.
|
|
2016
|
50 |
10 |
p. 1408-1411
|
artikel
|
| 12 |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
|
Musaev, A. M.
|
|
2016
|
50 |
10 |
p. 1352-1355
|
artikel
|
| 13 |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
|
Novikov, I. I.
|
|
2016
|
50 |
10 |
p. 1412-1415
|
artikel
|
| 14 |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C)
|
Andreev, V. M.
|
|
2016
|
50 |
10 |
p. 1356-1361
|
artikel
|
| 15 |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
|
Bobrov, M. A.
|
|
2016
|
50 |
10 |
p. 1390-1395
|
artikel
|
| 16 |
Reflectance of a PbSb2Te4 crystal in a wide spectral range
|
Nemov, S. A.
|
|
2016
|
50 |
10 |
p. 1322-1326
|
artikel
|
| 17 |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm
|
Babichev, A. V.
|
|
2016
|
50 |
10 |
p. 1299-1303
|
artikel
|
| 18 |
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission
|
Ageeva, N. N.
|
|
2016
|
50 |
10 |
p. 1312-1321
|
artikel
|
| 19 |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons
|
Emtsev, V. V.
|
|
2016
|
50 |
10 |
p. 1291-1298
|
artikel
|
| 20 |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals
|
Podkopaev, O. I.
|
|
2016
|
50 |
10 |
p. 1287-1290
|
artikel
|
| 21 |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
|
Veselov, D. A.
|
|
2016
|
50 |
10 |
p. 1396-1402
|
artikel
|
| 22 |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface
|
Benemanskaya, G. V.
|
|
2016
|
50 |
10 |
p. 1327-1332
|
artikel
|
| 23 |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
|
Asryan, L. V.
|
|
2016
|
50 |
10 |
p. 1362-1368
|
artikel
|
| 24 |
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities
|
Mezdrogina, M. M.
|
|
2016
|
50 |
10 |
p. 1304-1311
|
artikel
|
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