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Details for article 3 of 24 found articles
| Title: |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
| Author: |
Tsatsulnikov, A. F. Lundin, V. W. Zavarin, E. E. Yagovkina, M. A. Sakharov, A. V. Usov, S. O. Zemlyakov, V. E. Egorkin, V. I. Bulashevich, K. A. Karpov, S. Yu. Ustinov, V. M. |
| Appeared in: |
Semiconductors |
| Paging: | Volume 50 (2016) nr. 10 pages 1383-1389 |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Pleiades Publishing, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 24 found articles
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