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                             110 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A classification of the distortion symmetries near vacancies in zinc blende semiconductors Lannoo, M.
 1983
 116 1-3 p. 63-65
3 p.
 artikel
2 A molecular cluster study of complex defects in Si: The divacancy and the E center Fazzio, A.
 1983
 116 1-3 p. 90-94
5 p.
 artikel
3 Analytic subject index 1983
 116 1-3 p. 659-661
3 p.
 artikel
4 Anisotropic defect introduction in n and p-GaAs by electron irradiation Pons, D.
 1983
 116 1-3 p. 388-393
6 p.
 artikel
5 A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon Oehrlein, G.S.
 1983
 116 1-3 p. 230-235
6 p.
 artikel
6 A reexamination of the g tensor for defects with dangling bonds in silicon Lannoo, M.
 1983
 116 1-3 p. 85-89
5 p.
 artikel
7 AsGa antisite defects in GaAs Weber, E.R.
 1983
 116 1-3 p. 398-403
6 p.
 artikel
8 A unifying interpretation of dark line defects in GaAs and bright dislocation halos in GaP Frank, W.
 1983
 116 1-3 p. 420-424
5 p.
 artikel
9 Calculation of local density of states at defects in diamond and silicon Jones, R.
 1983
 116 1-3 p. 72-75
4 p.
 artikel
10 Calculation of Si and Al interstitials in silicon using the cluster-extended Green's function technique Baraff, G.A.
 1983
 116 1-3 p. 76-78
3 p.
 artikel
11 Carrier-density dependence of dynamic multiphonon nonradiative recombination through deep levels in semiconductors Sumi, H.
 1983
 116 1-3 p. 39-44
6 p.
 artikel
12 Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique Tajima, M.
 1983
 116 1-3 p. 404-408
5 p.
 artikel
13 Charge transport by dislocations in II–VI compounds Hutson, A.R.
 1983
 116 1-3 p. 650-656
7 p.
 artikel
14 Chromium in trigonal site in GaAs Picoli, G.
 1983
 116 1-3 p. 409-413
5 p.
 artikel
15 Conference committees and sponsors 1983
 116 1-3 p. X-
1 p.
 artikel
16 Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP Mooney, P.M.
 1983
 116 1-3 p. 431-435
5 p.
 artikel
17 Defect creation and doping of p-type impurities in ZnS crystals Taguchi, T.
 1983
 116 1-3 p. 503-507
5 p.
 artikel
18 Defect engineering as an important factor in developing VLSI substrates Richter, H.
 1983
 116 1-3 p. 162-167
6 p.
 artikel
19 Defects in gallium arsenide grown from solution under microgravity conditions Rodot, H.
 1983
 116 1-3 p. 168-176
9 p.
 artikel
20 Defects in semiconductors - 1982 Kimerling, L.C.
 1983
 116 1-3 p. 1-3
3 p.
 artikel
21 Defects introduced by high temperature electron irradiation in n-GaAs Stievenard, D.
 1983
 116 1-3 p. 394-397
4 p.
 artikel
22 Defects production and interaction in ion-implanted diamond Gippius, A.A.
 1983
 116 1-3 p. 187-194
8 p.
 artikel
23 Defect structure transitions in silicon induced by Q-switched laser annealing Cullis, A.G.
 1983
 116 1-3 p. 527-536
10 p.
 artikel
24 Diffusion and solubility of gold in silicon Stolwijk, N.A.
 1983
 116 1-3 p. 335-342
8 p.
 artikel
25 Dislocation and void formation in proton-bombarded and annealed gallium arsenide Snyman, H.C.
 1983
 116 1-3 p. 629-634
6 p.
 artikel
26 Dislocation structures and in situ observations of dislocation motion in InSb Fnaiech, M.
 1983
 116 1-3 p. 641-645
5 p.
 artikel
27 Dislocation structures and motion in II–VI semiconductors Lu, G.
 1983
 116 1-3 p. 646-649
4 p.
 artikel
28 Distorted defects in silicon and diamond Davies, G.
 1983
 116 1-3 p. 66-71
6 p.
 artikel
29 Dynamical aspects of laser generating luminescence centers in (Al,Ga)As Salathé, K.P.
 1983
 116 1-3 p. 570-574
5 p.
 artikel
30 Editorial Board 1983
 116 1-3 p. IFC-
1 p.
 artikel
31 Electronically controlled reactions of interstitial iron in silicon Kimerling, L.C.
 1983
 116 1-3 p. 297-300
4 p.
 artikel
32 Electronic density of states of ideal vacancies and anti-structure defects in GaAs Van Der Rest, J.
 1983
 116 1-3 p. 121-126
6 p.
 artikel
33 Electronic states of selected deep level defects in III–V semiconductors Hemstreet, L.A.
 1983
 116 1-3 p. 116-120
5 p.
 artikel
34 Electronic structure of oxygen in silicon Caldas, M.J.
 1983
 116 1-3 p. 106-111
6 p.
 artikel
35 Electron induced lattice relaxations and defect reactions Toyozawa, Y.
 1983
 116 1-3 p. 7-17
11 p.
 artikel
36 Electron irradiation effects in edge-defined film-fed growth ribbon silicon Jaworowski, A.E.
 1983
 116 1-3 p. 287-290
4 p.
 artikel
37 Electron localization on defects and optical nuclear polarization in disordered and semimagnetic semiconductors Bagraev, N.T.
 1983
 116 1-3 p. 236-243
8 p.
 artikel
38 Electron paramagnetic resonance of InP:Co2+ Lambert, B.
 1983
 116 1-3 p. 467-469
3 p.
 artikel
39 Enhancement of damage creation at metal-silicon interfaces during H+ and He+ irradiation Iwami, H.
 1983
 116 1-3 p. 328-331
4 p.
 artikel
40 Enhancement of defect reactions by tunnelling between defect potential curves Markvart, T.
 1983
 116 1-3 p. 45-51
7 p.
 artikel
41 EPR and ODMR investigations of defect centres in ZnTe:Cl Saminadayar, K.
 1983
 116 1-3 p. 514-518
5 p.
 artikel
42 ESR of Fe-S pairs in silicon Schirmer, O.F.
 1983
 116 1-3 p. 306-311
6 p.
 artikel
43 Excited triplet states of defects and optical nuclear polarization in silicon Vlasenko, L.S.
 1983
 116 1-3 p. 281-286
6 p.
 artikel
44 Experimental study of the Poole-Frenkel effect on the Si:Tl acceptor Keller, W.
 1983
 116 1-3 p. 244-251
8 p.
 artikel
45 Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements Murakami, K.
 1983
 116 1-3 p. 564-569
6 p.
 artikel
46 Fe-related defect centers in Si resulting from CW laser annealing Sheng, N.H.
 1983
 116 1-3 p. 553-557
5 p.
 artikel
47 Formation of vacancy and interstitial clustered defects in electron irradiated germanium Hirata, M.
 1983
 116 1-3 p. 616-622
7 p.
 artikel
48 High voltage electron microscope study of defects in silicon Oshima, R.
 1983
 116 1-3 p. 606-611
6 p.
 artikel
49 Hyperfine interaction and channeling studies of impurities implanted in silicon De Waard, H.
 1983
 116 1-3 p. 210-218
9 p.
 artikel
50 Identification of a deep electron trap in GaP:N Ferenczi, G.
 1983
 116 1-3 p. 436-443
8 p.
 artikel
51 Impact of high temperature processing on bulk defects in czochralski silicon Claeys, C.
 1983
 116 1-3 p. 148-161
14 p.
 artikel
52 Internal electronic configuration of Sn donors and acceptors in AIIIBV compounds Antoncik, E.
 1983
 116 1-3 p. 127-130
4 p.
 artikel
53 Interstitial muons and hydrogen in crystalline silicon Mainwood, A.
 1983
 116 1-3 p. 101-105
5 p.
 artikel
54 Investigation of process-induced defects in InP Rao, E.V.K.
 1983
 116 1-3 p. 449-455
7 p.
 artikel
55 Investigations in cobalt doped silicon by DLTS and Mössbauer effect Scheibe, E.
 1983
 116 1-3 p. 318-322
5 p.
 artikel
56 Investigations of well defined dislocations in silicon Alexander, H.
 1983
 116 1-3 p. 583-593
11 p.
 artikel
57 Ionization mechanisms of defect production in semiconductors Mashovets, T.V.
 1983
 116 1-3 p. 537-546
10 p.
 artikel
58 Iron-related defects in silicon Wünstel, K.
 1983
 116 1-3 p. 301-305
5 p.
 artikel
59 20KeV electron-beam annealing of defects in GaAsP during SEM measurement Wada, T.
 1983
 116 1-3 p. 479-486
8 p.
 artikel
60 List of contributors 1983
 116 1-3 p. 657-658
2 p.
 artikel
61 Local force variations caused by isoelectric impurities: Method of determination from first principles Kunc, K.
 1983
 116 1-3 p. 52-57
6 p.
 artikel
62 Low temperature electron damage studies in n-type GaAs Kouimtzi, S.D.
 1983
 116 1-3 p. 384-387
4 p.
 artikel
63 Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide Pomrenke, G.S.
 1983
 116 1-3 p. 414-419
6 p.
 artikel
64 Manifestations of deep levels point defects in GaAs Martin, G.M.
 1983
 116 1-3 p. 371-383
13 p.
 artikel
65 Measurements of the melt dynamics in laser annealed semiconductors Peercy, P.S.
 1983
 116 1-3 p. 558-563
6 p.
 artikel
66 Multivacancies, interstitials, and self-interstitial migration in silicon Pantelides, S.T.
 1983
 116 1-3 p. 18-27
10 p.
 artikel
67 Muonium in ultra-pure germanium Döring, K.-P.
 1983
 116 1-3 p. 354-360
7 p.
 artikel
68 Negative-U properties of the lattice vacancy in silicon Newton, J.L.
 1983
 116 1-3 p. 219-223
5 p.
 artikel
69 On the diffusion of donors into silicon: High concentration and nonequilibrium defect effects Mathiot, D.
 1983
 116 1-3 p. 95-100
6 p.
 artikel
70 Optical ionization cross sections of the traps created in 1 MeV electron irradiated n-type Ga1-xAlxAs Loualiche, S.
 1983
 116 1-3 p. 474-478
5 p.
 artikel
71 Optical properties of Ni+(d9) in ZnS Clerjaud, B.
 1983
 116 1-3 p. 500-502
3 p.
 artikel
72 Optical studies of vibronic bands in silicon Foy, C.P.
 1983
 116 1-3 p. 276-280
5 p.
 artikel
73 Origin of CW laser generated high efficiency AlGaAs microstructures Van Vechten, J.A.
 1983
 116 1-3 p. 575-582
8 p.
 artikel
74 Origin of the 1.080 eV (I2) photolumiscence line in irradiated silicon Thonke, K.
 1983
 116 1-3 p. 252-257
6 p.
 artikel
75 Origin of the 0.97 eV luminescence in irradiated silicon O'Donnell, K.P.
 1983
 116 1-3 p. 258-263
6 p.
 artikel
76 OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing Yuba, Y.
 1983
 116 1-3 p. 461-466
6 p.
 artikel
77 Overcompensation of misfit strain by dislocation networks in phosphorus implanted (001) silicon Viegers, M.P.A.
 1983
 116 1-3 p. 612-615
4 p.
 artikel
78 Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopy Bergholz, W.
 1983
 116 1-3 p. 312-317
6 p.
 artikel
79 Photoluminescence characterization of deep defects in silicon Sauer, R.
 1983
 116 1-3 p. 195-209
15 p.
 artikel
80 Photoluminescence excitation spectroscopy of Fe-doped GaP Shanabrook, B.V.
 1983
 116 1-3 p. 444-448
5 p.
 artikel
81 Photoluminescence from chromium-boron pairs in silicon Conzelmann, H.
 1983
 116 1-3 p. 291-296
6 p.
 artikel
82 Photoplastic effect in silicon Küsters, K.H.
 1983
 116 1-3 p. 594-599
6 p.
 artikel
83 Point defects in silicon studied by nickel diffusion Kitagawa, H.
 1983
 116 1-3 p. 323-327
5 p.
 artikel
84 Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle size Newman, R.C.
 1983
 116 1-3 p. 264-270
7 p.
 artikel
85 Preface Ammerlaan, C.A.J.
 1983
 116 1-3 p. IX-
1 p.
 artikel
86 Spectral resolution in low temperature cathodoluminescence. Application to CdTe Chamonal, J.P.
 1983
 116 1-3 p. 519-526
8 p.
 artikel
87 Spin dependent formation and decay of the triplet antisite centre in GaP Killoran, N.
 1983
 116 1-3 p. 425-430
6 p.
 artikel
88 Structural defects and p-type conductivity in ZnSe Fitzpatrick, B.
 1983
 116 1-3 p. 487-491
5 p.
 artikel
89 Swirl defects in float-zoned silicon crystals Abe, T.
 1983
 116 1-3 p. 139-147
9 p.
 artikel
90 TEM damage studies and electrical profile measurements of Si+ implanted GaAs Stewart, C.P.
 1983
 116 1-3 p. 635-640
6 p.
 artikel
91 The electrical behaviour of individual dislocations, shockley partials and stacking fault ribbons in silicon Ourmazd, A.
 1983
 116 1-3 p. 600-605
6 p.
 artikel
92 The electronic configuration of amphoteric Sn dopants in III–V compound semiconductors Weyer, G.
 1983
 116 1-3 p. 470-473
4 p.
 artikel
93 The electronic properties of dangling bonds in silicon Kirton, M.J.
 1983
 116 1-3 p. 79-84
6 p.
 artikel
94 The electronic states of oxygen in gallium phosphide an example of weak bonding Morgan, T.N.
 1983
 116 1-3 p. 131-138
8 p.
 artikel
95 The formation of the E.S.R. centres A-2 and A-3 in diamond electron irradiated below 30K and an interpretation in terms of self di-interstitial complexes Flint, I.T.
 1983
 116 1-3 p. 183-186
4 p.
 artikel
96 The hole trapping defects in irradiated germanium as studied by DLTS Fukuoka, N.
 1983
 116 1-3 p. 343-348
6 p.
 artikel
97 The luminescence of copper in zinc oxide West, C.
 1983
 116 1-3 p. 492-499
8 p.
 artikel
98 The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements Sprenger, M.
 1983
 116 1-3 p. 224-229
6 p.
 artikel
99 The optoelectronic properties of donors in organo-metallic grown zinc selenide Dean, P.J.
 1983
 116 1-3 p. 508-513
6 p.
 artikel
100 Theory defects in silicon: Recent calculations using finite molecular clusters Watkins, G.D.
 1983
 116 1-3 p. 28-38
11 p.
 artikel
101 The oxygen related donor effect in silicon Benton, J.L.
 1983
 116 1-3 p. 271-275
5 p.
 artikel
102 Thermal shrinkage of dislocation loops and the mechanism of self-diffusion in germanium Hirata, M.
 1983
 116 1-3 p. 623-628
6 p.
 artikel
103 The structure of the Pt-center in silicon Henning, J.C.M.
 1983
 116 1-3 p. 332-334
3 p.
 artikel
104 The zero-phonon luminescence from Cr2+ in InP Barrau, J.
 1983
 116 1-3 p. 456-460
5 p.
 artikel
105 Tight binding study of transition ions in silicon and E.P.R. spectra Pecheur, P.
 1983
 116 1-3 p. 112-115
4 p.
 artikel
106 Time resolved donor-acceptor and acceptor-valence band recombination in semiconducting diamond Moss, D.J.
 1983
 116 1-3 p. 177-182
6 p.
 artikel
107 Trend in the local-force variations due to substitutional transition-metal impurities in ZnS Zigone, M.
 1983
 116 1-3 p. 58-62
5 p.
 artikel
108 Two novel acceptors in ultra-pure germanium: Nature and interconversion Haller, E.E.
 1983
 116 1-3 p. 349-353
5 p.
 artikel
109 Using reactor-neutron compensated germanium crystals to simulate the properties of amorphous semiconductors Konopleva, R.F.
 1983
 116 1-3 p. 361-370
10 p.
 artikel
110 Vacancy-diffusion model for quenched-in E-centers in CW laser annealed virgin silicon Chantre, A.
 1983
 116 1-3 p. 547-552
6 p.
 artikel
                             110 gevonden resultaten
 
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