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                             82 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absorption coefficient spectra of μc-Si in the low-energy region 0.4–1.2eV Kitao, J.
 2001
 66 1-4 p. 245-251
7 p.
 artikel
2 A detailed study of H2 plasma passivation effects on GaAs/Si solar cell Wang, G.
 2001
 66 1-4 p. 599-605
7 p.
 artikel
3 Advanced III–V solar cell structures grown by MOVPE Bett, A.W
 2001
 66 1-4 p. 541-550
10 p.
 artikel
4 A large discrepancy between CPM and ESR defect densities in light-soaked a-Si:H Shimizu, Tatsuo
 2001
 66 1-4 p. 203-207
5 p.
 artikel
5 Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56MHz) plasma excitation frequencies Rech, B
 2001
 66 1-4 p. 267-273
7 p.
 artikel
6 Analysis of energy balance of electricity and heat generated by TPV generators Amano, Takashi
 2001
 66 1-4 p. 579-583
5 p.
 artikel
7 Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films Sameshima, T
 2001
 66 1-4 p. 389-395
7 p.
 artikel
8 A new perspective on the characterization of materials for a-Si:H solar cells Jiao, L.
 2001
 66 1-4 p. 231-237
7 p.
 artikel
9 An overview of thermophotovoltaic generation of electricity Coutts, Timothy J
 2001
 66 1-4 p. 443-452
10 p.
 artikel
10 Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si:H layer Fujiwara, H.
 2001
 66 1-4 p. 209-215
7 p.
 artikel
11 Characterisation of light trapping in silicon films by spectral photoconductance measurements Campbell, Patrick
 2001
 66 1-4 p. 187-193
7 p.
 artikel
12 Characteristics of Al0.36Ga0.64As/GaAs tandem solar cells with pp−n−n structural AlGaAs solar cells Takahashi, Ken
 2001
 66 1-4 p. 517-524
8 p.
 artikel
13 Characteristics of GaAs-based concentrator cells Araki, Kenji
 2001
 66 1-4 p. 559-565
7 p.
 artikel
14 Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells Kurobe, Ken-ichi
 2001
 66 1-4 p. 1-9
9 p.
 artikel
15 Characterization of pulsed laser crystallization of silicon thin film Ishigame, S
 2001
 66 1-4 p. 381-387
7 p.
 artikel
16 Charge transport in microcrystalline Si – the specific features Kočka, J.
 2001
 66 1-4 p. 61-71
11 p.
 artikel
17 Cost effective and high-performance thin film Si solar cell towards the 21st century Yamamoto, Kenji
 2001
 66 1-4 p. 117-125
9 p.
 artikel
18 Development and manufacturing of CIS thin film solar modules Karg, Franz H
 2001
 66 1-4 p. 645-653
9 p.
 artikel
19 Development of both-side junction silicon space solar cells Tonomura, Yoshifumi
 2001
 66 1-4 p. 551-558
8 p.
 artikel
20 Development of highly efficient thin film silicon solar cells on texture-etched zinc oxide-coated glass substrates Müller, J
 2001
 66 1-4 p. 275-281
7 p.
 artikel
21 Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition Masuda, Atsushi
 2001
 66 1-4 p. 259-265
7 p.
 artikel
22 Effect of film thickness on electrical property of microcrystalline silicon Andoh, Nobuyuki
 2001
 66 1-4 p. 437-441
5 p.
 artikel
23 Effect of front and back contact roughness on optical properties of single junction a–Si:H solar cells Zeman, M.
 2001
 66 1-4 p. 353-359
7 p.
 artikel
24 Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate Nishimoto, Tomonori
 2001
 66 1-4 p. 179-185
7 p.
 artikel
25 Effect of light degradation on bifacial Si solar cells Ohtsuka, H.
 2001
 66 1-4 p. 51-59
9 p.
 artikel
26 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates Zhao, Jianhua
 2001
 66 1-4 p. 27-36
10 p.
 artikel
27 Epitaxial growth of polycrystalline films formed by microwave plasma chemical vapor deposition at low temperatures Andoh, Nobuyuki
 2001
 66 1-4 p. 431-435
5 p.
 artikel
28 ESA's space solar array technology programme current status and future activities Fernandez Lisbona, Emilio
 2001
 66 1-4 p. 487-494
8 p.
 artikel
29 Experiments on anisotropic etching of Si in TMAH You, Jae Sung
 2001
 66 1-4 p. 37-44
8 p.
 artikel
30 Fabrication and simulation of GaSb thermophotovoltaic cells Sulima, O.V
 2001
 66 1-4 p. 533-540
8 p.
 artikel
31 Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications Tomm, Y
 2001
 66 1-4 p. 369-374
6 p.
 artikel
32 Formation of stable Si network at low T s by controlling chemical reaction at growing surface Shimizu, I.
 2001
 66 1-4 p. 127-136
10 p.
 artikel
33 GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors Moto, Akihiro
 2001
 66 1-4 p. 585-592
8 p.
 artikel
34 Heteroepitaxial technologies of III–V on Si Kawanami, H
 2001
 66 1-4 p. 479-486
8 p.
 artikel
35 High current, thin silicon-on-ceramic solar cell Barnett, A.M
 2001
 66 1-4 p. 45-50
6 p.
 artikel
36 High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios Agert, C
 2001
 66 1-4 p. 637-644
8 p.
 artikel
37 High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates Takamoto, Tatsuya
 2001
 66 1-4 p. 511-516
6 p.
 artikel
38 High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD Endo, Koji
 2001
 66 1-4 p. 283-288
6 p.
 artikel
39 High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics Carlin, J.A
 2001
 66 1-4 p. 621-630
10 p.
 artikel
40 High-pressure plasma CVD for high-quality amorphous silicon Isomura, Masao
 2001
 66 1-4 p. 375-380
6 p.
 artikel
41 High-quality narrow gap (∼1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment Sato, H
 2001
 66 1-4 p. 321-327
7 p.
 artikel
42 High-quality thin film GaAs bonded to Si using SeS2 — A new approach for high-efficiency tandem solar cells Arokiaraj, J
 2001
 66 1-4 p. 607-614
8 p.
 artikel
43 High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma Sakikawa, Nobuki
 2001
 66 1-4 p. 337-343
7 p.
 artikel
44 High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane Ichikawa, Mitsuru
 2001
 66 1-4 p. 225-230
6 p.
 artikel
45 High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma Fukawa, Makoto
 2001
 66 1-4 p. 217-223
7 p.
 artikel
46 Impact and options for boron diffusions in buried contact solar cells Slade, Alexander M
 2001
 66 1-4 p. 11-15
5 p.
 artikel
47 Improved efficiency of Al0.36Ga0.64As solar cells with a pp−n−n structure Takahashi, Ken
 2001
 66 1-4 p. 525-532
8 p.
 artikel
48 Improved p–i–n solar cells structure for narrow bandgap a-Si:H prepared by Ar* chemical annealing at high temperatures Komaru, T.
 2001
 66 1-4 p. 329-335
7 p.
 artikel
49 Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6 Goto, Shu
 2001
 66 1-4 p. 631-636
6 p.
 artikel
50 Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application Akahori, K
 2001
 66 1-4 p. 593-598
6 p.
 artikel
51 Index 2001
 66 1-4 p. 655-665
11 p.
 artikel
52 Index 2001
 66 1-4 p. 667-670
4 p.
 artikel
53 In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films Suemasu, A.
 2001
 66 1-4 p. 313-320
8 p.
 artikel
54 Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM Breymesser, A
 2001
 66 1-4 p. 171-177
7 p.
 artikel
55 Mass-production of large size a-Si modules and future plan Tawada, Yoshihisa
 2001
 66 1-4 p. 95-105
11 p.
 artikel
56 Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique Meier, J
 2001
 66 1-4 p. 73-84
12 p.
 artikel
57 Microcrystalline n-i-p solar cells deposited at 10Å/s by VHF-GD Feitknecht, L
 2001
 66 1-4 p. 397-403
7 p.
 artikel
58 Microcrystalline Si films deposited from dichlorosilane using RF-PECVD Guo, Lihui
 2001
 66 1-4 p. 405-412
8 p.
 artikel
59 Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate Niikura, C
 2001
 66 1-4 p. 421-429
9 p.
 artikel
60 Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD Matsuura, D
 2001
 66 1-4 p. 305-311
7 p.
 artikel
61 Modeling charge-carrier transport and generation–recombination mechanisms in p+n+ a-Si tunnel junctions Furlan, J
 2001
 66 1-4 p. 147-153
7 p.
 artikel
62 More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution Ziegler, Y
 2001
 66 1-4 p. 413-419
7 p.
 artikel
63 Numerical modelling of trap-assisted tunnelling mechanism in a-Si:H and μc-Si n/p structures and tandem solar cells Vukadinović, M
 2001
 66 1-4 p. 361-367
7 p.
 artikel
64 Performance of p-type silicon-oxide windows in amorphous silicon solar cell Matsumoto, Y.
 2001
 66 1-4 p. 163-170
8 p.
 artikel
65 Production technology for amorphous silicon-based flexible solar cells Ichikawa, Yukimi
 2001
 66 1-4 p. 107-115
9 p.
 artikel
66 Progress toward high-efficiency (>24%) and low-cost multi-junction solar cell production Chiang, P.K
 2001
 66 1-4 p. 615-620
6 p.
 artikel
67 Properties of amorphous silicon solar cells fabricated from SiH2Cl2 Shimizu, S
 2001
 66 1-4 p. 289-295
7 p.
 artikel
68 Radiation-induced defects in solar cell materials Bourgoin, J.C
 2001
 66 1-4 p. 467-477
11 p.
 artikel
69 Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite Haapamaa, J
 2001
 66 1-4 p. 573-578
6 p.
 artikel
70 Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells Karam, Nasser H
 2001
 66 1-4 p. 453-466
14 p.
 artikel
71 Role of hydrogen in hydrogenated microcrystalline silicon Itoh, T
 2001
 66 1-4 p. 239-244
6 p.
 artikel
72 Shadow protection for tandem solar cells in space Taylor, S.J
 2001
 66 1-4 p. 567-571
5 p.
 artikel
73 Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells de Angelis, N
 2001
 66 1-4 p. 495-500
6 p.
 artikel
74 Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film Shirai, Hajime
 2001
 66 1-4 p. 137-145
9 p.
 artikel
75 Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques Ohkawa, K.
 2001
 66 1-4 p. 297-303
7 p.
 artikel
76 Temperature-dependent study of the radiative losses in double-quantum well solar cells Kluftinger, Benjamin
 2001
 66 1-4 p. 501-509
9 p.
 artikel
77 The creation of hydrogen radicals by the hot-wire technique and its application for μc-Si:H Harada, H
 2001
 66 1-4 p. 253-258
6 p.
 artikel
78 The influence of doping on charge carrier transport in a-Si:H Herm, D
 2001
 66 1-4 p. 195-201
7 p.
 artikel
79 The use of silicon nitride in buried contact solar cells Vogl, Bernhard
 2001
 66 1-4 p. 17-25
9 p.
 artikel
80 Thickness dependence of microcrystalline silicon solar cell properties Vetterl, O
 2001
 66 1-4 p. 345-351
7 p.
 artikel
81 Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells Okamoto, Shingo
 2001
 66 1-4 p. 85-94
10 p.
 artikel
82 Wide optical band gap window layers for solar cells Yu, Zhenrui
 2001
 66 1-4 p. 155-162
8 p.
 artikel
                             82 gevonden resultaten
 
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