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                             186 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerator SIMS for trace element detection Döbeli, M.
 1994
 85 1-4 p. 770-774
 artikel
2 A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies Barradas, N.P.
 1994
 85 1-4 p. 202-205
 artikel
3 A comparison between MeV protons and α particles for IBIC analysis Breese, M.B.H.
 1994
 85 1-4 p. 790-793
 artikel
4 A data acquisition system for scanning microbeam analysis Morse, D.H.
 1994
 85 1-4 p. 693-698
 artikel
5 A determination of the critical damage density required for “amorphisation” of ion-implanted diamond Spits, R.A.
 1994
 85 1-4 p. 347-351
 artikel
6 Advantages and limitations of external beams in applications to arts & archeology, geology and environmental problems Mandò, Pier Andrea
 1994
 85 1-4 p. 815-823
 artikel
7 A method of improving the SIMS analysis of Si in GaAs by monitoring SiO2 − ions at oblique angles of bombardment Sharma, V.K.M.
 1994
 85 1-4 p. 391-394
 artikel
8 A 0.9 MV accelerator for materials research at the STU Bratislava Kováč, P.
 1994
 85 1-4 p. 749-751
 artikel
9 Analysis of brown coal and their liquefaction products Vogt, J.
 1994
 85 1-4 p. 104-107
 artikel
10 Analysis of diatomite sediments from a paleolake in central Mexico using PIXE, X-ray tomography and X-ray diffraction Miranda, J.
 1994
 85 1-4 p. 886-889
 artikel
11 Angular dependence of ion yields and cesium surface coverage in Cs+ attachment secondary ion mass spectrometry (CsAMS) Wittmaack, K.
 1994
 85 1-4 p. 374-378
 artikel
12 Annealing of radiation damage in MgO single crystals after krypton implantation Friedland, E.
 1994
 85 1-4 p. 316-320
 artikel
13 A PIXE study of abnormal X-rays from binary fluorides with protons in the range 0.4–2 MeV Mboweni, R.C.M.
 1994
 85 1-4 p. 138-141
 artikel
14 Application of an iterative maximum-likelihood algorithm in PIXE depth profiling of trace elements Liew, S.C.
 1994
 85 1-4 p. 621-626
 artikel
15 Application of radioactive ion beams in the study of implanted layers Latuszyński, A.
 1994
 85 1-4 p. 798-802
 artikel
16 Application of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown III–V compound semiconductors Tamura, M.
 1994
 85 1-4 p. 404-413
 artikel
17 Application of the ERD method for hydrogen determination in silicon (oxy) nitride thin films prepared by ECR plasma deposition Hrubčín, L.
 1994
 85 1-4 p. 60-62
 artikel
18 A SIMS study of the altered layer in Si using 18O2 primaries at various angles of incidence Beyer, G.P.
 1994
 85 1-4 p. 370-373
 artikel
19 A SIMS study on the secondary ion yield in boron implanted silicon using a low energy primary oxygen beam Tomita, M.
 1994
 85 1-4 p. 399-403
 artikel
20 A study of 2H migration and release in 2H+-irradiated YBa2Cu3O7-δ/LaAlO3 〈100〉 samples during rapid thermal annealing Yupu, Li
 1994
 85 1-4 p. 281-286
 artikel
21 A study of the ionization of Al, Si, S, Sc, Ti and V by Ar ions in the energy range 1–5 MeV Nekab, M.
 1994
 85 1-4 p. 123-127
 artikel
22 Author index 1994
 85 1-4 p. 943-958
 artikel
23 Azimuth-energy anisotropy of Ar ions scattered from a Ni(111) surface Tzanev, S.
 1994
 85 1-4 p. 443-447
 artikel
24 Beam parameters and characterization technique Krafcsik, I.
 1994
 85 1-4 p. 716-721
 artikel
25 Bi-implanted silicon reference material revisited: uniformity of the remaining batch Wätjen, U.
 1994
 85 1-4 p. 627-632
 artikel
26 Channeling analysis of the oxygen sublattices in oxide single crystals Turos, A.
 1994
 85 1-4 p. 448-456
 artikel
27 Channeling contrast analysis of GaAs side-walls fabricated by laser wet chemical etching Takai, M.
 1994
 85 1-4 p. 752-755
 artikel
28 Characterization of organic matter/ minerals associations in oilfield rocks using the nuclear microprobe Mercier, F.
 1994
 85 1-4 p. 874-880
 artikel
29 Characterization of the air pollution in the urban area of Madrid Climent-Font, Aurelio
 1994
 85 1-4 p. 830-835
 artikel
30 Charge collection and soft error in DRAMs investigated using 400 keV proton microprobe Sayama, H.
 1994
 85 1-4 p. 703-707
 artikel
31 Combination of IBA techniques and Raman spectroscopy to study defects in 18O labelled YBaCuO thin films López, J.García
 1994
 85 1-4 p. 462-467
 artikel
32 Committees and exhibitors 1994
 85 1-4 p. ix
 artikel
33 Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon Lohner, T.
 1994
 85 1-4 p. 524-527
 artikel
34 Composition and structure of the Cu85Pd15(110) (2 × 1) surface: a low energy ion scattering investigation Bergmans, R.H.
 1994
 85 1-4 p. 435-438
 artikel
35 Computer methods for analysis and simulation of RBS and ERDA spectra Kótai, E.
 1994
 85 1-4 p. 588-596
 artikel
36 Computer simulation to calculate current distributions and emittance patterns of ion beams for synthesis of electric lenses Kiss, L.
 1994
 85 1-4 p. 764-769
 artikel
37 Conference photographs 1994
 85 1-4 p. x
 artikel
38 Consequence of the fractal nature of the collision cascade: end-of-range spikes in ballistic systems Bolse, Wolfgang
 1994
 85 1-4 p. 188-191
 artikel
39 Continuum optical radiation produced by Ar+ and Kr+ bombardment of semiconductor and metal targets Kuduk, Rajmund
 1994
 85 1-4 p. 794-797
 artikel
40 Contribution of IBA techniques to the study of porous silicon films Morazzani, V.
 1994
 85 1-4 p. 287-292
 artikel
41 Contribution of IBA techniques to the study of YBaCuO thin films with anomalous c-axis lattice parameter Wong, J.C.Cheang
 1994
 85 1-4 p. 171-177
 artikel
42 Contribution of nuclear microanalysis and of 18O tracer technique to study the oxygen sublattice in high T c superconducting thin films Siejka, J.
 1994
 85 1-4 p. 216-225
 artikel
43 Cross sections for non-Rutherford backscattering of 4He from five light elements Cheng, Huan-sheng
 1994
 85 1-4 p. 47-50
 artikel
44 Deceleration of MeV antiprotons and muons to keV energies — the anticyclotron A progress report Horváth, D.
 1994
 85 1-4 p. 736-740
 artikel
45 Defect investigation in boron implanted silicon by means of temperature dependent RBS and optical near-edge absorption Wendler, E.
 1994
 85 1-4 p. 528-532
 artikel
46 Dependence of the 7Li(p, α)4He minimum yield on the Mg-concentration for proton channeling in LiNbO3:Mg Kling, A.
 1994
 85 1-4 p. 490-493
 artikel
47 Depth microscopy at interfaces Dollinger, G.
 1994
 85 1-4 p. 786-789
 artikel
48 Depth profiling of porous silicon surface by means of heavy-ion TOF ERDA Arai, E.
 1994
 85 1-4 p. 226-229
 artikel
49 Depth resolution during sputter profiling of Si in GaAs Petravić, M.
 1994
 85 1-4 p. 388-390
 artikel
50 Depth resolution in SIMS study of boron δ-doping in epitaxial silicon Dupuy, J.C.
 1994
 85 1-4 p. 379-382
 artikel
51 Detection of submonolayer 18O on a gold surface by nuclear reaction analysis Wielunski, L.S.
 1994
 85 1-4 p. 352-355
 artikel
52 Development of a 200 kV FIB system for non destructive three-dimensional near surface analysis Ryoh, Mimura
 1994
 85 1-4 p. 756-759
 artikel
53 Diffusion in thin-film amorphous metallic alloys Bøttiger, J.
 1994
 85 1-4 p. 206-215
 artikel
54 Editorial Board 1994
 85 1-4 p. ii
 artikel
55 Elastic recoil detection analysis of coadsorption of hydrogen and deuterium on clean Si surfaces Kenjiro, Oura
 1994
 85 1-4 p. 344-346
 artikel
56 Elastic recoil detection analysis using ion-induced electron emission for particle identification Benka, O.
 1994
 85 1-4 p. 650-654
 artikel
57 Elastic recoil selection by pulse shape analysis Klein, S.S.
 1994
 85 1-4 p. 660-663
 artikel
58 Elemental and isotopic distributions of boron and lithium in tourmalines using nuclear muprobe Michaud, V.
 1994
 85 1-4 p. 881-885
 artikel
59 Elemental isotopic and structural analysis using ion beams Sellschop, J.P.F.
 1994
 85 1-4 p. 1-19
 artikel
60 Energy and medium dependence of the Lewis effect in high resolution excitation curves near narrow nuclear resonances Vickridge, I.C.
 1994
 85 1-4 p. 566-571
 artikel
61 Energy resolution of silicon detectors: approaching the physical limit Steinbauer, E.
 1994
 85 1-4 p. 642-649
 artikel
62 ERD technique with monochromatic neutrons as an effective tool for hydrogen-material systems study Skorodumov, B.G.
 1994
 85 1-4 p. 803-807
 artikel
63 Evaluation of atomic displacement in ion implanted GaAs Kaczanowski, J.
 1994
 85 1-4 p. 607-610
 artikel
64 External-beam PIXE analysis of ancient chinese coins Lin, E.K.
 1994
 85 1-4 p. 869-873
 artikel
65 External beam RBS in an unenclosed helium environment Giuntini, L.
 1994
 85 1-4 p. 744-748
 artikel
66 Focused MeV light ion beams for high resolution channeling contrast imaging Jamieson, D.N.
 1994
 85 1-4 p. 676-688
 artikel
67 High precision determination of 16O in high T c superconductors by DIGME Vickridge, Ian
 1994
 85 1-4 p. 95-99
 artikel
68 High-resolution elastic recoil depth profiling using alpha-particle beams: CERDA-TOF Klein, S.S.
 1994
 85 1-4 p. 655-659
 artikel
69 High resolution low energy resonance depth profiling of18O in near surface isotopic tracing studies Battistig, G.
 1994
 85 1-4 p. 326-330
 artikel
70 IBA of Au-Al alloys Demortier, G.
 1994
 85 1-4 p. 311-315
 artikel
71 IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning Stedile, F.C.
 1994
 85 1-4 p. 248-254
 artikel
72 IMAP © © Copyright Sandia Corporation and Lawrence Livermore National Laboratories, April 1993. : a complete Ion Micro-Analysis Package for the nuclear microprobe Antolak, A.J.
 1994
 85 1-4 p. 597-601
 artikel
73 Impact-collision ion-scattering spectrometry studies of the VC0.8(111)-(8 × 1) surface Hammar, M.
 1994
 85 1-4 p. 429-434
 artikel
74 Implanted damage evolution in sequential annealed silicon Buiu, O.
 1994
 85 1-4 p. 933-935
 artikel
75 Influence of layer thickness and primary ion on profile broadening during sputtering of Al0.5Ga0.5As/GaAs structures Linnarsson, M.K.
 1994
 85 1-4 p. 395-398
 artikel
76 In-situ hydrogen charging of thin Nb films and depth profiling with the 1 H(15N, αγ)12 C nuclear reaction Blässer, S.
 1994
 85 1-4 p. 24-27
 artikel
77 Interdiffusion and thermally induced strain relaxation in GaAs/In0.2Ga0.8As/GaAs single quantum well structures Kozanecki, A.
 1994
 85 1-4 p. 192-196
 artikel
78 Interface evolution and epitaxial realignment in polycrystal/single crystal Si structures Priolo, F.
 1994
 85 1-4 p. 159-166
 artikel
79 Investigation of a duopigatron ion source for He2+ ion production Agawa, Y.
 1994
 85 1-4 p. 722-725
 artikel
80 Investigation of hydrogen isotope behaviour in palladium membrane cathodes in the process of water electrolysis by the NERD method Skorodumov, B.G.
 1994
 85 1-4 p. 301-305
 artikel
81 Investigation of radiation damage in garnets produced by implantation of rare earth ions and its annealing Steinecke, A.
 1994
 85 1-4 p. 520-523
 artikel
82 Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing Biró, L.P.
 1994
 85 1-4 p. 925-928
 artikel
83 Investigation of the elements depth profiles in surface layers of glass modified by ion beam assisted deposition Duvanov, S.M.
 1994
 85 1-4 p. 264-267
 artikel
84 Investigation of the mechanism responsible for the corrosion resistance of B implanted copper Ding, P.J.
 1994
 85 1-4 p. 260-263
 artikel
85 Ion beam analysis for the environment Malmqvist, Klas G.
 1994
 85 1-4 p. 84-94
 artikel
86 Ion beam equipment modification for external beam operation Král, J.
 1994
 85 1-4 p. 760-763
 artikel
87 Ion beam induced luminescence from diamond and other crystals from a nuclear microbeam Bettiol, A.A.
 1994
 85 1-4 p. 775-779
 artikel
88 Ion beam mixing and oxidation of a Si/Ge-multilayer under oxygen bombardment De Coster, W.
 1994
 85 1-4 p. 911-915
 artikel
89 Ion-implantation induced anomalous surface amorphization in silicon Lohner, T.
 1994
 85 1-4 p. 335-339
 artikel
90 Ion induced X-ray emission and electron microscopy for the investigation of micro-particles Romo-Kröger, C.M.
 1994
 85 1-4 p. 845-848
 artikel
91 Lattice location of Er in GaAs determined from Monte Carlo simulation of ion channeling spectra Kido, Y.
 1994
 85 1-4 p. 484-489
 artikel
92 Lattice location of implants in diamond by conversion electron emission channeling Storbeck, E.J.
 1994
 85 1-4 p. 503-507
 artikel
93 Lattice site location of iron in potassium niobate Beck, O.
 1994
 85 1-4 p. 474-478
 artikel
94 Lattice sites of ion implanted Li in indium antimonide Hofsäss, H.
 1994
 85 1-4 p. 468-473
 artikel
95 Light-ion stopping near the maximum Sigmund, Peter
 1994
 85 1-4 p. 541-550
 artikel
96 7Li-induced reactions for light elements analysis Liu, J.R.
 1994
 85 1-4 p. 780-785
 artikel
97 Low energy ion mixing in Si-Ge multilayer system Menyhard, M.
 1994
 85 1-4 p. 383-387
 artikel
98 Low energy ion scattering study of hydrogen-induced reordering of Pb monolayer films on Si(111) surfaces Oura, Kenjiro
 1994
 85 1-4 p. 439-442
 artikel
99 L-subshell X-ray production by 400–700 keV protons in selected elements with 52 ≤ Z ≤ 71 Rodríguez-Fernández, L.
 1994
 85 1-4 p. 150-153
 artikel
100 L X-ray production cross sections of medium Z elements for 0.4 to 2.0 MeV protons Sow, C.H.
 1994
 85 1-4 p. 133-137
 artikel
101 Mass and energy dispersive recoil spectrometry of Si x Ge1−x grown by electron beam evaporation Johnston, Peter N.
 1994
 85 1-4 p. 907-910
 artikel
102 Mass calibration and intercalibration of Prague PIXE setup Potoček, V.
 1994
 85 1-4 p. 145-149
 artikel
103 Matrix effects correction in the analysis of Y-Ba-Cu-O bulk samples by PIXE method Šandrik, R.
 1994
 85 1-4 p. 154-158
 artikel
104 Measurements of self-diffusion of Ni and interdiffusion in thin-film amorphous NiZr using RBS Krog, J.P.
 1994
 85 1-4 p. 197-201
 artikel
105 Measurements of thin oxide films of SiO2/Si(100) Lennard, W.N.
 1994
 85 1-4 p. 42-46
 artikel
106 Mechanism of neutralization in low-energy He+ ion scattering from carbidic and graphitic carbon species on rhenium van den Oetelaar, L.C.A.
 1994
 85 1-4 p. 420-423
 artikel
107 MeV heavy ion microprobe PIXE for the analysis of the materials surface Mokuno, Y.
 1994
 85 1-4 p. 741-743
 artikel
108 Micro-analysis of kidney stones sequentially excreted from a single patient Pineda, C.A.
 1994
 85 1-4 p. 896-900
 artikel
109 Microcharacterizing zircon mineral grain by ionoluminescence combined with PIXE Yang, C.
 1994
 85 1-4 p. 808-814
 artikel
110 Multiple scattering induced resolution limits in grazing incidence resonance depth profiling Battistig, G.
 1994
 85 1-4 p. 572-578
 artikel
111 15N Doppier spectroscopy of 1H on diamond Jans, S.
 1994
 85 1-4 p. 321-325
 artikel
112 New trends in hard coatings technology Baumvol, I.J.R.
 1994
 85 1-4 p. 230-235
 artikel
113 Non-Gaussian energy loss distribution of light ions in thin films Noriaki, Matsunami
 1994
 85 1-4 p. 556-559
 artikel
114 Nuclear microprobe development and application to microelectronics Mikio, Takai
 1994
 85 1-4 p. 664-675
 artikel
115 Nuclear microscopy of single aerosol particle Orlic, I.
 1994
 85 1-4 p. 840-844
 artikel
116 Observation of local SIMOX layers by microprobe RBS Kinomura, A.
 1994
 85 1-4 p. 921-924
 artikel
117 On the nonlinearity of silicon detectors and the energy calibration in RBS Hosier, W.
 1994
 85 1-4 p. 602-606
 artikel
118 On the use of LiF as non- and analyte spike for the determination of fluorine by PIGE Olivier, C.
 1994
 85 1-4 p. 128-132
 artikel
119 Optimization of the depth resolution in ERDA of H using 12C ions Szilágyi, E.
 1994
 85 1-4 p. 63-67
 artikel
120 Oxygen isotopic exchange during the annealing of low energy SIMOX layers Yupu, Li
 1994
 85 1-4 p. 236-242
 artikel
121 Perturbed angular distribution studies in natural, synthetic CVD and HPHT diamond Connell, S.H.
 1994
 85 1-4 p. 508-515
 artikel
122 PIXE analysis of Bronze and Iron Age weapons from Bactria Mommsen, H.
 1994
 85 1-4 p. 890-895
 artikel
123 PIXE analysis of byzantine ceramics Waksman, S.Y.
 1994
 85 1-4 p. 824-829
 artikel
124 PIXE analysis of cascade impactor samples collected at the Kruger National Park, South Africa Salma, I.
 1994
 85 1-4 p. 849-855
 artikel
125 PIXE analysis of pottery from the northern Cape Province of South Africa Jacobson, L.
 1994
 85 1-4 p. 901-903
 artikel
126 PIXE data evaluation in Prague Potoček, V.
 1994
 85 1-4 p. 611-615
 artikel
127 PIXE gadgets Demortier, G.
 1994
 85 1-4 p. 112-117
 artikel
128 PIXE-INP computer code for PIXE analyses of thin and thick samples Havránek, V.
 1994
 85 1-4 p. 637-641
 artikel
129 Practical aspects of ion beam analysis of semiconductor structures Frey, L.
 1994
 85 1-4 p. 356-362
 artikel
130 Prediction and characterization of compound phase formation at Ge-metal interfaces in thin film structures Marais, T.K.
 1994
 85 1-4 p. 183-187
 artikel
131 Preface Gyulay, J.
 1994
 85 1-4 p. vii-viii
 artikel
132 Preparation of diamond targets for ion beam analysis Rebak, M.
 1994
 85 1-4 p. 243-247
 artikel
133 Production and analysis of buried nitride layers in Si/SiO2 with ion beam methods Fröse, D.
 1994
 85 1-4 p. 936-939
 artikel
134 Quantification of beryllium in thin films using proton backscattering Leavitt, J.A.
 1994
 85 1-4 p. 37-41
 artikel
135 Quantitative calibration of intense (α, α) elastic scattering resonances for 12C at 5.50–5.80 MeV and for 16O at 7.30–7.65 MeV Davies, J.A.
 1994
 85 1-4 p. 28-32
 artikel
136 Radiation damage and trapping of helium in HOPG-graphite Ramos, G.
 1994
 85 1-4 p. 479-483
 artikel
137 Range parameters of 13C implants in semiconductor and metal targets Friedland, E.
 1994
 85 1-4 p. 272-275
 artikel
138 Range parameters of Er, Ga and F implanted into SiC films Fichtner, P.F.P.
 1994
 85 1-4 p. 579-583
 artikel
139 RBS, AES, EDX and ESCA investigation of heat treatment effects on stainless steel alloy 440C Taylor, T.
 1994
 85 1-4 p. 904-906
 artikel
140 RBS analysis of thin MoSix films: Correlation between stoichiometry and some features of sputtering Elstner, B.
 1994
 85 1-4 p. 297-300
 artikel
141 RBS and ERD analysis using lithium ions Liu, J.R.
 1994
 85 1-4 p. 51-54
 artikel
142 RBS and Raman spectroscopy study of heat-treatment effect on phenolformaldehyde resin Evelyn, A.L.
 1994
 85 1-4 p. 861-863
 artikel
143 RBS and recoil spectrometry analysis of CoSi2 formation on GaAs Hult, Mikael
 1994
 85 1-4 p. 916-920
 artikel
144 RBS, ERDA and NR analyses of hard amorphous nitrogen-incorporated carbon films Freire Jr., F.L.
 1994
 85 1-4 p. 268-271
 artikel
145 RBS studies of nickel behavior in silicon, amorphized with nickel ions Kuznetsov, A.Yu.
 1994
 85 1-4 p. 940-942
 artikel
146 Reconstruction of Ar depth profiles from PIXE measurements Osipowicz, T.
 1994
 85 1-4 p. 499-502
 artikel
147 Resonant nuclear reaction analysis with high depth resolution Kul'ment'ev, A.I.
 1994
 85 1-4 p. 633-636
 artikel
148 Resonant scattering assisted light element analysis Zimmerman, R.L.
 1994
 85 1-4 p. 68-70
 artikel
149 Roman influences on metalworking at the Titelberg (Luxembourg): Compositional studies using PIXE spectrometry Hamilton, E.
 1994
 85 1-4 p. 856-860
 artikel
150 Roman onyx glass: A study of production recipes and colorants, using PIXE spectrometry Fleming, S.J.
 1994
 85 1-4 p. 864-868
 artikel
151 Scattering of heavy ions in crystals Muralev, V.A.
 1994
 85 1-4 p. 584-587
 artikel
152 Setup for materials analysis with heavy ion beams at the Munich MP tandem Assmann, W.
 1994
 85 1-4 p. 726-731
 artikel
153 SIMS and depth profiling of semiconductor structures Svensson, B.G.
 1994
 85 1-4 p. 363-369
 artikel
154 Simultaneous application of (p, γ) and (p, α) channeling to the detection of light elements in crystals Williams, E.K.
 1994
 85 1-4 p. 537-540
 artikel
155 Simultaneous measurement of the hydrogen isotopes H, D, T and 3He with HIERD Kreissig, U.
 1994
 85 1-4 p. 71-74
 artikel
156 Simultaneous microanalysis of nitrogen and oxygen on silicon using NRA with a cyclotron Ivanov, E.A.
 1994
 85 1-4 p. 293-296
 artikel
157 Sputtering and transformation of one phase Cu-Ni alloy surfaces under ion bombardment Begrambekov, L.B.
 1994
 85 1-4 p. 331-334
 artikel
158 Sputtering phenomena of CoSi2 under low energy oxygen bombardment Brijs, B.
 1994
 85 1-4 p. 306-310
 artikel
159 Stoichiometry effects at Cu-Ni alloy surfaces during 5 keV Ar ion sputtering at room temperatures Miteva, V.
 1994
 85 1-4 p. 340-343
 artikel
160 Stopping powers for channeled helium ions in silicon using electron densities from bandstructure calculations van Dijk, P.W.L.
 1994
 85 1-4 p. 551-555
 artikel
161 Studies of MOCVD grown HgCdMnTe by ion beam and related techniques Studd, Warren B.
 1994
 85 1-4 p. 929-932
 artikel
162 Study of annealed amorphous hydrogenated films by elastic recoil detection analysis Freire Jr., F.L.
 1994
 85 1-4 p. 55-59
 artikel
163 Study of damage accumulation in sapphire during nitrogen implantation Soumoy, C.
 1994
 85 1-4 p. 516-519
 artikel
164 Surface composition of Pt10Ni90(110) Weigand, P.
 1994
 85 1-4 p. 424-428
 artikel
165 Temperature dependent dechanneling of 1.4 MeV He+ and optical near-edge absorption in B+ implanted GaP Wesch, W.
 1994
 85 1-4 p. 533-536
 artikel
166 The application of high resolution deuteron-induced prompt γ-ray spectrometry to the analysis of some transition elements Peisach, M.
 1994
 85 1-4 p. 142-144
 artikel
167 The application of PIXE and PIGE techniques in the analytics of atmospheric aerosols Koltay, E.
 1994
 85 1-4 p. 75-83
 artikel
168 The lattice site of Au in Be after 24 h 197mHg isotope implantation and decay Alves, E.
 1994
 85 1-4 p. 457-461
 artikel
169 The measurement of enhanced PIXE yields with 3He2+ ions Peisach, M.
 1994
 85 1-4 p. 100-103
 artikel
170 The National University of Singapore nuclear microscope facility Watt, F.
 1994
 85 1-4 p. 708-715
 artikel
171 Theoretical calculation of the depth resolution of IBA methods Szilágyi, E.
 1994
 85 1-4 p. 616-620
 artikel
172 Theoretical study of ion beam modification of carbon foils Lebedev, S.G.
 1994
 85 1-4 p. 276-280
 artikel
173 The PIXE-PIGE method for the classification of late Roman glass sealings Borbély-Kiss, I.
 1994
 85 1-4 p. 836-839
 artikel
174 The role of strain in the crystallisation of Ge implanted (100) Si Elliman, R.G.
 1994
 85 1-4 p. 178-182
 artikel
175 The structure of the Si(100)-(4 × 3) In surface studied by STM and ICISS Steele, B.E.
 1994
 85 1-4 p. 414-419
 artikel
176 The use of PIXE/channeling for the localization of zinc in InP Krause, H.
 1994
 85 1-4 p. 494-498
 artikel
177 Thickness measurement of titanium nitride layers on steel using PIXE and proton backscattering Campbell, J.L.
 1994
 85 1-4 p. 108-111
 artikel
178 Thick target yields of deuteron induced gamma-ray emission from light elements Kiss, Á.Z.
 1994
 85 1-4 p. 118-122
 artikel
179 Three-dimensional analysis of locally deposited silicon oxide on ferrite by a combination of microprobe RBS and PIXE Kinomura, A.
 1994
 85 1-4 p. 689-692
 artikel
180 Three dimensional RBS on the Faure nuclear microprobe Churms, C.L.
 1994
 85 1-4 p. 699-702
 artikel
181 Time-of-flight heavy ion backscattering spectrometry Knapp, J.A.
 1994
 85 1-4 p. 20-23
 artikel
182 Trapping and reflection coefficients for deuterium in graphite at low energy and oblique incidence Mayer, M.
 1994
 85 1-4 p. 560-565
 artikel
183 Use of a rastered microbeam to study lateral diffusion of interest to microelectronics Ding, P.J.
 1994
 85 1-4 p. 167-170
 artikel
184 Use of STIM in the proton microprobe analysis of single particles Bogdanović, I.
 1994
 85 1-4 p. 732-735
 artikel
185 Use of the 9 Be(α, n)12 C reaction for detection of beryllium Harmon, J.F.
 1994
 85 1-4 p. 33-36
 artikel
186 Wear measurement of the cutting edge of superhard turning tools using TLA technique Vasváry, L.
 1994
 85 1-4 p. 255-259
 artikel
                             186 gevonden resultaten
 
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