nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application
|
Huq, Hasina F. |
|
2006 |
37 |
7 |
p. 579-582 4 p. |
artikel |
2 |
Alloy splitting of Te-DX in Al x Ga1−x As analysis using the deep level transient spectroscopy technique
|
Bouzrara, L. |
|
2006 |
37 |
7 |
p. 586-590 5 p. |
artikel |
3 |
A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC
|
Chen, Wanjun |
|
2006 |
37 |
7 |
p. 574-578 5 p. |
artikel |
4 |
A review of safe operation area
|
Sun, Zhilin |
|
2006 |
37 |
7 |
p. 661-667 7 p. |
artikel |
5 |
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications
|
Kabra, Sneha |
|
2006 |
37 |
7 |
p. 620-626 7 p. |
artikel |
6 |
Electron mobility in n-doped zinc sulphide
|
Rodrigues, Clóves G. |
|
2006 |
37 |
7 |
p. 657-660 4 p. |
artikel |
7 |
Evaluation of graded-channel SOI MOSFET operation at high temperatures
|
Galeti, Milene |
|
2006 |
37 |
7 |
p. 601-607 7 p. |
artikel |
8 |
Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer
|
Kinder, R. |
|
2006 |
37 |
7 |
p. 642-645 4 p. |
artikel |
9 |
Metallic nanogaps with access windows for liquid based systems
|
Kronholz, Stephan |
|
2006 |
37 |
7 |
p. 591-594 4 p. |
artikel |
10 |
Nanometer range: A new theoretical challenge for microelectronics and optoelectronics
|
Eloy, Jean-François |
|
2006 |
37 |
7 |
p. 630-634 5 p. |
artikel |
11 |
Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT
|
Zhang, Fei |
|
2006 |
37 |
7 |
p. 569-573 5 p. |
artikel |
12 |
On the drain current saturation in short channel MOSFETs
|
Benfdila, A. |
|
2006 |
37 |
7 |
p. 635-641 7 p. |
artikel |
13 |
Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study
|
Hu, Weida |
|
2006 |
37 |
7 |
p. 613-619 7 p. |
artikel |
14 |
Reliability analysis of the fine pitch connection using anisotropic conductive film (ACF)
|
Lin, Chao-Ming |
|
2006 |
37 |
7 |
p. 565-568 4 p. |
artikel |
15 |
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
|
Ran, Junxue |
|
2006 |
37 |
7 |
p. 583-585 3 p. |
artikel |
16 |
Systematic derivation of explicit design formulae for log-domain: A 3rd-order lowpass example
|
Drakakis, E.M. |
|
2006 |
37 |
7 |
p. 646-656 11 p. |
artikel |
17 |
Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study
|
Tian, Yuan |
|
2006 |
37 |
7 |
p. 595-600 6 p. |
artikel |
18 |
Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique
|
Chan, Kah-Yoong |
|
2006 |
37 |
7 |
p. 608-612 5 p. |
artikel |
19 |
Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders
|
De Vita, G. |
|
2006 |
37 |
7 |
p. 627-629 3 p. |
artikel |