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                             94 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison of TRIM and molecular dynamics in calculating the backscattering yield of carbon incident on graphite Bergsåker, H
 1993
 44 3-4 p. 341-344
4 p.
 artikel
2 Advances of nuclear microscopy in microelectronics analysis Breese, MBH
 1993
 44 3-4 p. 175-180
6 p.
 artikel
3 A low-voltage, high-current, ion-bombardment source using magnetron principles Ja'fer, HA
 1993
 44 3-4 p. 381-383
3 p.
 artikel
4 Analysis and control of ion beam processing by optical spectroscopy Heinrich, Friedhelm
 1993
 44 3-4 p. 275-279
5 p.
 artikel
5 Author index 1993
 44 3-4 p. v-vi
nvt p.
 artikel
6 Chemical etching of GaAs with a novel low energy ion beam source : A low damage process for device fabrication Beckman, Judith
 1993
 44 3-4 p. 257-261
5 p.
 artikel
7 Chloromethane-based reactive ion etching of III–V semiconductor materials Law, VJ
 1993
 44 3-4 p. 233-237
5 p.
 artikel
8 Computer simulation of growth during molecularbeam epitaxy of metal-on-metal surfaces Jakas, Mario M
 1993
 44 3-4 p. 337-339
3 p.
 artikel
9 Damage caused by Cl2 based dry etching of III–V materials van Roijen, Raymond
 1993
 44 3-4 p. 231-
1 p.
 artikel
10 Detailed computer simulation of damage accumulation in ion irradiated crystalline targets Jaraiz, M
 1993
 44 3-4 p. 321-323
3 p.
 artikel
11 Diversity of products by VEECO instruments Ltd 1993
 44 3-4 p. 406-
1 p.
 artikel
12 Drilling of fine apertures in thin metallic foils using a focused ion beam Khamsehpour, B
 1993
 44 3-4 p. 361-365
5 p.
 artikel
13 Dry pump for atmosphere to 10−2 mbar and 10−4 mbar operation 1993
 44 3-4 p. 408-
1 p.
 artikel
14 Editorial: Software survey section 1993
 44 3-4 p. i-iv
nvt p.
 artikel
15 Effect of flow rate on reactive ion etching of GaAs in CH4/H2 plasma Sahafi, HF
 1993
 44 3-4 p. 263-265
3 p.
 artikel
16 Focused ion beams—microfabrication methods and applications (invited) Prewett, PD
 1993
 44 3-4 p. 345-351
7 p.
 artikel
17 Fragmentational collisions in reactive ion beam processing Hoffmann, Peter
 1993
 44 3-4 p. 271-273
3 p.
 artikel
18 High resolution depth profiling in near-surface regions of solids by narrow nuclear reaction resonances below 0.5 MeV with low energy spread proton beams Schulte, WH
 1993
 44 3-4 p. 185-190
6 p.
 artikel
19 Introduction 1993
 44 3-4 p. 165-
1 p.
 artikel
20 Investigation of ion beam synthesized FeSi2 and the α→β-phase transformation Panknin, D
 1993
 44 3-4 p. 171-174
4 p.
 artikel
21 Ion-assisted selective deposition of aluminium for via-hole interconnections Barklund, AM
 1993
 44 3-4 p. 197-201
5 p.
 artikel
22 Ion beam-assisted etching of semiconductors: surface chemistry vs surface physics Jackman, Richard B
 1993
 44 3-4 p. 239-243
5 p.
 artikel
23 Ion beam modification of polymers Sofield, CJ
 1993
 44 3-4 p. 285-290
6 p.
 artikel
24 Ion energy distributions in SiCl4 and Ar/O2 dry etching discharges Hope, DAO
 1993
 44 3-4 p. 245-248
4 p.
 artikel
25 Laboratory based space experiments using an ion implanter McKee, JSC
 1993
 44 3-4 p. 167-170
4 p.
 artikel
26 Micro-machining using a focused ion beam Young, Richard J
 1993
 44 3-4 p. 353-356
4 p.
 artikel
27 Monitoring implant induced gate oxide stress potentials Angel, Gordon
 1993
 44 3-4 p. 371-375
5 p.
 artikel
28 New from Balzers 1993
 44 3-4 p. 400-
1 p.
 artikel
29 New from Balzers 1993
 44 3-4 p. 400-
1 p.
 artikel
30 New from Balzers 1993
 44 3-4 p. 399-
1 p.
 artikel
31 New from Balzers 1993
 44 3-4 p. 400-
1 p.
 artikel
32 New from Balzers 1993
 44 3-4 p. 399-400
2 p.
 artikel
33 New from Edwards 1993
 44 3-4 p. 398-
1 p.
 artikel
34 New from Edwards Fowler, Mr JF
 1993
 44 3-4 p. 398-399
2 p.
 artikel
35 New from Edwards 1993
 44 3-4 p. 397-
1 p.
 artikel
36 New from Edwards 1993
 44 3-4 p. 397-398
2 p.
 artikel
37 New from Huntington laboratories 1993
 44 3-4 p. 403-
1 p.
 artikel
38 New from Huntington laboratories 1993
 44 3-4 p. 402-403
2 p.
 artikel
39 New from Huntington laboratories 1993
 44 3-4 p. 403-
1 p.
 artikel
40 New from Huntington laboratories 1993
 44 3-4 p. 402-
1 p.
 artikel
41 New from Huntington laboratories 1993
 44 3-4 p. 402-
1 p.
 artikel
42 New from LEYBOLD 1993
 44 3-4 p. 399-
1 p.
 artikel
43 New from LEYBOLD 1993
 44 3-4 p. 399-
1 p.
 artikel
44 New from VAT vacuum products 1993
 44 3-4 p. 401-
1 p.
 artikel
45 New from VAT vacuum products 1993
 44 3-4 p. 400-401
2 p.
 artikel
46 New from VG and microtech 1993
 44 3-4 p. 397-
1 p.
 artikel
47 New from VSW scientific instruments 1993
 44 3-4 p. 403-404
2 p.
 artikel
48 New ion gauge controller from Terranova 1993
 44 3-4 p. 404-
1 p.
 artikel
49 New ionization gauge from Grancille-Phillips 1993
 44 3-4 p. 401-
1 p.
 artikel
50 New literature from MRS 1993
 44 3-4 p. 410-411
2 p.
 artikel
51 New literature from MRS 1993
 44 3-4 p. 410-
1 p.
 artikel
52 New literature from MRS 1993
 44 3-4 p. 410-
1 p.
 artikel
53 New product from Tosoh SMD 1993
 44 3-4 p. 401-
1 p.
 artikel
54 New product manager forTosoh SMD 1993
 44 3-4 p. 407-
1 p.
 artikel
55 New product manager forTosoh SMD 1993
 44 3-4 p. 407-408
2 p.
 artikel
56 News from atom tech UK 1993
 44 3-4 p. 410-
1 p.
 artikel
57 News from catalogue 1993
 44 3-4 p. 408-409
2 p.
 artikel
58 News from Edwards 1993
 44 3-4 p. 405-
1 p.
 artikel
59 News from Edwards 1993
 44 3-4 p. 405-
1 p.
 artikel
60 News from GEC 1993
 44 3-4 p. 409-410
2 p.
 artikel
61 News from intellemetrics 1993
 44 3-4 p. 406-
1 p.
 artikel
62 News from LEYBOLD 1993
 44 3-4 p. 409-
1 p.
 artikel
63 News from LEYBOLD 1993
 44 3-4 p. 409-
1 p.
 artikel
64 News from Rietschle 1993
 44 3-4 p. 406-407
2 p.
 artikel
65 News from VG microtech 1993
 44 3-4 p. 404-
1 p.
 artikel
66 News from VG microtech 1993
 44 3-4 p. 404-405
2 p.
 artikel
67 News from VSW 1993
 44 3-4 p. 408-
1 p.
 artikel
68 Nitrogen profiles of thin sputtered PVD silicon nitride films Markwitz, A
 1993
 44 3-4 p. 367-370
4 p.
 artikel
69 Novel precursors for chemically assisted ion beam etching : reactions of dichloroethane on GaAs (100) Marshall, Duncan
 1993
 44 3-4 p. 249-256
8 p.
 artikel
70 Profiles of ion beams extracted from impregnated-electrode-type liquid-metal ion source with linear array emission points Ishikawa, J
 1993
 44 3-4 p. 357-360
4 p.
 artikel
71 Quartz resonator techniques for simultaneous measurement of areal mass density, lateral stress, and temperature in thin films Way, AS
 1993
 44 3-4 p. 385-388
4 p.
 artikel
72 Radio frequency plasma sputter type heavy negative ion source Ishikawa, Junzo
 1993
 44 3-4 p. 203-207
5 p.
 artikel
73 Reactive ion-plating at low ion energies with an unbalanced magnetron Howson, RP
 1993
 44 3-4 p. 191-195
5 p.
 artikel
74 Reactive unbalanced magnetron sputtering of hydrogenated amorphous silicon and silicon oxide Hall, GW
 1993
 44 3-4 p. 227-230
4 p.
 artikel
75 Recent measurements of nuclear reaction cross-sections with ion beams at very low energies Cecil, FE
 1993
 44 3-4 p. 181-183
3 p.
 artikel
76 SIMS analysis using molecular ions for the study of boron precipitation in silicon Chew, A
 1993
 44 3-4 p. 223-226
4 p.
 artikel
77 Simulation of ion beam assisted deposition—a comparison with experimental results Ektessabi, AM
 1993
 44 3-4 p. 213-217
5 p.
 artikel
78 Sputtering of NiTi alloys: a comparison of experiment and simulation Neshev, I
 1993
 44 3-4 p. 209-212
4 p.
 artikel
79 The anomalous depth distribution of low dose oxygen and nitrogen ions implanted into silicon Wong, JKY
 1993
 44 3-4 p. 219-222
4 p.
 artikel
80 The effect of beam divergence on single crystal implant profiles Chakarov, IR
 1993
 44 3-4 p. 325-329
5 p.
 artikel
81 The effect of oxygen flooding on the secondary ion yields of matrix and impurity species in InP and InGaAs Waddilove, AE
 1993
 44 3-4 p. 389-395
7 p.
 artikel
82 Theoretical calculations of the broadening of dilute Si, Al and Be doped δ layers in GaAs during SIMS depth profiling Badheka, R
 1993
 44 3-4 p. 331-335
5 p.
 artikel
83 The reactive sputtering of thin films of TiN at low target voltages Swady, RA
 1993
 44 3-4 p. 297-301
5 p.
 artikel
84 The structure of small clusters ejected by ion bombardment of solids Ali, Montaz
 1993
 44 3-4 p. 377-379
3 p.
 artikel
85 The theory of ion beam polishing and machining Carter, G
 1993
 44 3-4 p. 303-309
7 p.
 artikel
86 Trapping mechanisms in scattering of beams at grazing incidence from crystals Smith, Roger
 1993
 44 3-4 p. 311-319
9 p.
 artikel
87 Ultra-high vacuum systems with cryopumps 1993
 44 3-4 p. 407-
1 p.
 artikel
88 Ultra-high vacuum systems with cryopumps 1993
 44 3-4 p. 407-
1 p.
 artikel
89 Vacuum diary conferences on related topics 1993
 44 3-4 p. 413-416
4 p.
 artikel
90 Waveguide lasers in insulators using ion implantation Townsend, PD
 1993
 44 3-4 p. 267-270
4 p.
 artikel
91 Waveguide properties of He+-implanted chromium doped laser materials Rodman, MJ
 1993
 44 3-4 p. 281-283
3 p.
 artikel
92 Wear reduction by ion implantation-assisted deposition Kolitsch, A
 1993
 44 3-4 p. 291-295
5 p.
 artikel
93 Welch foundation scholarship 1994 1993
 44 3-4 p. 411-
1 p.
 artikel
94 Wide range anti-reflection coating for the visible, uv and air available from Balzers 1993
 44 3-4 p. 406-
1 p.
 artikel
                             94 gevonden resultaten
 
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