| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A brief review of selected aspects of the materials science of ball bonding
|
Breach, C.D.
|
|
2010
|
50 |
1 |
p. 1-20
20 p.
|
artikel
|
| 2 |
Accuracy of simplified printed circuit board finite element models
|
Amy, Robin Alastair
|
|
2010
|
50 |
1 |
p. 86-97
12 p.
|
artikel
|
| 3 |
A reliability model for SAC solder covering isothermal mechanical cycling and thermal cycling conditions
|
Herkommer, Dominik
|
|
2010
|
50 |
1 |
p. 116-126
11 p.
|
artikel
|
| 4 |
Calendar
|
|
|
2010
|
50 |
1 |
p. I-II
nvt p.
|
artikel
|
| 5 |
Design of experiments to investigate reliability for solder joints PBGA package under high cycle fatigue
|
Wu, Mei-Ling
|
|
2010
|
50 |
1 |
p. 127-139
13 p.
|
artikel
|
| 6 |
Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradation
|
Tsai, Hui-Wen
|
|
2010
|
50 |
1 |
p. 48-56
9 p.
|
artikel
|
| 7 |
DMOS FET parameter drift kinetics from microscopic modeling
|
Alagi, F.
|
|
2010
|
50 |
1 |
p. 57-62
6 p.
|
artikel
|
| 8 |
Doping compensation for increased robustness of fast recovery silicon diodes
|
Vobecký, J.
|
|
2010
|
50 |
1 |
p. 32-38
7 p.
|
artikel
|
| 9 |
ESD protection for thin gate oxides in 65nm
|
Notermans, Guido
|
|
2010
|
50 |
1 |
p. 26-31
6 p.
|
artikel
|
| 10 |
Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate
|
He, Bo-Ching
|
|
2010
|
50 |
1 |
p. 63-69
7 p.
|
artikel
|
| 11 |
Finite volume based CFD simulation of pressurized flip-chip underfill encapsulation process
|
Khor, C.Y.
|
|
2010
|
50 |
1 |
p. 98-105
8 p.
|
artikel
|
| 12 |
Fracture phenomena induced by Front-End/Back-End interactions: Dedicated failure analysis and numerical developments
|
Gallois-Garreignot, Sébastien
|
|
2010
|
50 |
1 |
p. 75-85
11 p.
|
artikel
|
| 13 |
Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories
|
Kim, Hee-Dong
|
|
2010
|
50 |
1 |
p. 21-25
5 p.
|
artikel
|
| 14 |
Inside front cover - Editorial board
|
|
|
2010
|
50 |
1 |
p. IFC-
1 p.
|
artikel
|
| 15 |
Modeling of multi-layered structure containing heterogeneous material layer with randomly distributed particles using infinite element method
|
Liu, De-Shin
|
|
2010
|
50 |
1 |
p. 106-115
10 p.
|
artikel
|
| 16 |
Rapid assessment of BGA life under vibration and bending, and influence of input parameter uncertainties
|
Wu, Mei-Ling
|
|
2010
|
50 |
1 |
p. 140-148
9 p.
|
artikel
|
| 17 |
Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base
|
Chang, Yang-Hua
|
|
2010
|
50 |
1 |
p. 70-74
5 p.
|
artikel
|
| 18 |
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes
|
Dökme, İ.
|
|
2010
|
50 |
1 |
p. 39-44
6 p.
|
artikel
|
| 19 |
Total-dose-induced edge effect in SOI NMOS transistors with different layouts
|
Liu, Jie
|
|
2010
|
50 |
1 |
p. 45-47
3 p.
|
artikel
|
| 20 |
Using Boolean satisfiability for computing soft error rates in early design stages
|
Shazli, S.Z.
|
|
2010
|
50 |
1 |
p. 149-159
11 p.
|
artikel
|
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