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                             97 results found
no title author magazine year volume issue page(s) type
1 A complete RF power technology assessment for military applications Moreau, C.
 2006
 46 9-11 p. 1817-1822
6 p.
 article
2 A 3D analysis technique for detecting trace metal contamination Goto, Yasunori
 2006
 46 9-11 p. 1542-1547
6 p.
 article
3 AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements Sozza, A.
 2006
 46 9-11 p. 1725-1730
6 p.
 article
4 Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant Alvarez, D.
 2006
 46 9-11 p. 1597-1602
6 p.
 article
5 Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up Heer, M.
 2006
 46 9-11 p. 1591-1596
6 p.
 article
6 A new high-voltage tolerant I/O for improving ESD robustness Jang, J.T.
 2006
 46 9-11 p. 1634-1637
4 p.
 article
7 A new method to characterize the thermomechanical response of multilayered structures in power electronics Zimprich, P.
 2006
 46 9-11 p. 1844-1847
4 p.
 article
8 Application of various optical techniques for ESD defect localization Essely, F.
 2006
 46 9-11 p. 1563-1568
6 p.
 article
9 A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect Wang, Robin C.J.
 2006
 46 9-11 p. 1673-1678
6 p.
 article
10 ATPG scan logic failure analysis: a case study of logic ICs – fault isolation, defect mechanism identification and yield improvement Gao, Liming
 2006
 46 9-11 p. 1458-1463
6 p.
 article
11 author index - authors from this issue only 2006
 46 9-11 p. I-III
nvt p.
 article
12 Characterisation of IC packaging interfaces and loading effects Yeo, H.C.
 2006
 46 9-11 p. 1892-1897
6 p.
 article
13 Characterization of photonic devices by secondary electron potential contrast Buzzo, M.
 2006
 46 9-11 p. 1536-1541
6 p.
 article
14 Charging-Effects in RF capacitive switches influence of insulating layers composition Lamhamdi, M.
 2006
 46 9-11 p. 1700-1704
5 p.
 article
15 Charging of radiation induced defects in RF MEMS dielectric films Exarchos, M.
 2006
 46 9-11 p. 1695-1699
5 p.
 article
16 Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications Castellazzi, A.
 2006
 46 9-11 p. 1754-1759
6 p.
 article
17 Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node Schlangen, R.
 2006
 46 9-11 p. 1498-1503
6 p.
 article
18 Contents - take from IPS 2006
 46 9-11 p. iii-viii
nvt p.
 article
19 Defect detection in multilayer ceramic capacitors Krieger, V.
 2006
 46 9-11 p. 1926-1931
6 p.
 article
20 Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors Danesin, Francesca
 2006
 46 9-11 p. 1750-1753
4 p.
 article
21 Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress Gerardin, S.
 2006
 46 9-11 p. 1669-1672
4 p.
 article
22 Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions Yuan, C.
 2006
 46 9-11 p. 1679-1684
6 p.
 article
23 Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards DeNardi, C.
 2006
 46 9-11 p. 1569-1574
6 p.
 article
24 Designing in reliability in advanced CMOS technologies Parthasarathy, C.R.
 2006
 46 9-11 p. 1464-1471
8 p.
 article
25 Development of highly accelerated electromigration test Tan, Cher Ming
 2006
 46 9-11 p. 1638-1642
5 p.
 article
26 Device level electrical-thermal-stress coupled-field modeling Huang, Guang Yu
 2006
 46 9-11 p. 1823-1827
5 p.
 article
27 Dynamic voltage stress effects on nMOS varactor Yu, Chuanzhao
 2006
 46 9-11 p. 1812-1816
5 p.
 article
28 Editorial Balk, L.J.
 2006
 46 9-11 p. 1401-1402
2 p.
 article
29 Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode Irace, A.
 2006
 46 9-11 p. 1784-1789
6 p.
 article
30 Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling Dupont, L.
 2006
 46 9-11 p. 1766-1771
6 p.
 article
31 Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests Belaïd, M.A.
 2006
 46 9-11 p. 1800-1805
6 p.
 article
32 Electrical steering of vehicles - fault-tolerant analysis and design Blanke, Mogens
 2006
 46 9-11 p. 1421-1432
12 p.
 article
33 Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps Miyazaki, Toru
 2006
 46 9-11 p. 1898-1903
6 p.
 article
34 Electromigration failure distributions of dual damascene Cu /low – k interconnects Oates, A.S.
 2006
 46 9-11 p. 1581-1586
6 p.
 article
35 Electromigration lifetimes and void growth at low cumulative failure probability Tsuchiya, Hideaki
 2006
 46 9-11 p. 1415-1420
6 p.
 article
36 Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development Courtas, S.
 2006
 46 9-11 p. 1530-1535
6 p.
 article
37 Electro-thermal short pulsed simulation for SOI technology Entringer, Christophe
 2006
 46 9-11 p. 1482-1485
4 p.
 article
38 ESD protection structure qualification – a new approach for release for automotive applications Goroll, M.
 2006
 46 9-11 p. 1648-1651
4 p.
 article
39 ESD Susceptibility of Submicron Air Gaps Wolf, Heinrich
 2006
 46 9-11 p. 1587-1590
4 p.
 article
40 Evaluation of scanning capacitance microscopy sample preparation by focused ion beam Rodriguez, N.
 2006
 46 9-11 p. 1554-1557
4 p.
 article
41 Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect Roy, Arijit
 2006
 46 9-11 p. 1652-1656
5 p.
 article
42 Experimental study of power MOSFET’s gate damage in radiation environment Busatto, G.
 2006
 46 9-11 p. 1854-1857
4 p.
 article
43 Failure analyses for debug and ramp-up of modern IC’s Burmer, Christian
 2006
 46 9-11 p. 1486-1497
12 p.
 article
44 Failure Analysis-assisted FMEA Cassanelli, G.
 2006
 46 9-11 p. 1795-1799
5 p.
 article
45 Failure mechanism of trench IGBT under short-circuit after turn-off Benmansour, A.
 2006
 46 9-11 p. 1778-1783
6 p.
 article
46 Fault diagnosis technology based on transistor behavior analysis for physical analysis Sanada, M.
 2006
 46 9-11 p. 1575-1580
6 p.
 article
47 FinFET and MOSFET preliminary comparison of gate oxide reliability Fernández, R.
 2006
 46 9-11 p. 1608-1611
4 p.
 article
48 Gamma radiation effects on RF MEMS capacitive switches Crunteanu, A.
 2006
 46 9-11 p. 1741-1746
6 p.
 article
49 Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides Pompl, T.
 2006
 46 9-11 p. 1603-1607
5 p.
 article
50 High brightness GaN LEDs degradation during dc and pulsed stress Meneghini, M.
 2006
 46 9-11 p. 1720-1724
5 p.
 article
51 High power reliability aspects on RF MEMS varactor design Palego, C.
 2006
 46 9-11 p. 1705-1710
6 p.
 article
52 Hot-carrier degradation analysis based on ring oscillators Wang, Jingchao
 2006
 46 9-11 p. 1858-1863
6 p.
 article
53 Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs Rafí, J.M.
 2006
 46 9-11 p. 1657-1663
7 p.
 article
54 Hot carrier reliability of RF N- LDMOS for S Band radar application Gares, M.
 2006
 46 9-11 p. 1806-1811
6 p.
 article
55 Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation Hayama, K.
 2006
 46 9-11 p. 1731-1735
5 p.
 article
56 Improved physical understanding of intermittent failure in continuous monitoring method Filho, W.C. Maia
 2006
 46 9-11 p. 1886-1891
6 p.
 article
57 Improving performance and reliability of NOR-Flash arrays by using pulsed operation Chimenton, A.
 2006
 46 9-11 p. 1478-1481
4 p.
 article
58 Initial stage of silver electrochemical migration degradation Yang, S.
 2006
 46 9-11 p. 1915-1921
7 p.
 article
59 Intrinsic bonding defects in transition metal elemental oxides Lucovsky, G.
 2006
 46 9-11 p. 1623-1628
6 p.
 article
60 Investigation of MOSFET failure in soft-switching conditions Iannuzzo, F.
 2006
 46 9-11 p. 1790-1794
5 p.
 article
61 Kelvin probe force microscopy – An appropriate tool for the electrical characterisation of LED heterostructures Bergbauer, W.
 2006
 46 9-11 p. 1736-1740
5 p.
 article
62 Localization and physical analysis of a complex SRAM failure in 90nm technology Qian, Zhongling
 2006
 46 9-11 p. 1558-1562
5 p.
 article
63 Lock-in thermal IR imaging using a solid immersion lens Breitenstein, O.
 2006
 46 9-11 p. 1508-1513
6 p.
 article
64 Modern IC packaging trends and their reliability implications Plieninger, R.
 2006
 46 9-11 p. 1868-1873
6 p.
 article
65 Multiscale modelling of multilayer substrates Ubachs, R.L.J.M.
 2006
 46 9-11 p. 1472-1477
6 p.
 article
66 NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs Danković, D.
 2006
 46 9-11 p. 1828-1833
6 p.
 article
67 New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors Lee, In Kyung
 2006
 46 9-11 p. 1864-1867
4 p.
 article
68 New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions Barlini, D.
 2006
 46 9-11 p. 1772-1777
6 p.
 article
69 Novel ESD strategy for high voltage non-volatile programming pin application Im, Kyoung-Sik
 2006
 46 9-11 p. 1664-1668
5 p.
 article
70 Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity Altes, A.
 2006
 46 9-11 p. 1525-1529
5 p.
 article
71 Part average analysis – A tool for reducing failure rates in automotive electronics Wagner, M.
 2006
 46 9-11 p. 1433-1438
6 p.
 article
72 Pb-free high temperature solders for power device packaging Yamada, Y.
 2006
 46 9-11 p. 1932-1937
6 p.
 article
73 Physical-to-Logical Mapping of Emission Data using Place-and-Route Nicholson, R.A.
 2006
 46 9-11 p. 1548-1553
6 p.
 article
74 Post-breakdown leakage resistance and its dependence on device area Chen, Tze Wee
 2006
 46 9-11 p. 1612-1616
5 p.
 article
75 Power cycling tests for accelerated ageing of ultracapacitors Briat, O.
 2006
 46 9-11 p. 1445-1450
6 p.
 article
76 Progress in reliability research in the micro and nano region Wunderle, B.
 2006
 46 9-11 p. 1685-1694
10 p.
 article
77 Prospects on Mn-doped ZnGeP2 for spintronics Krivosheeva, A.V.
 2006
 46 9-11 p. 1747-1749
3 p.
 article
78 Read disturb in flash memories: reliability case Tanduo, P.
 2006
 46 9-11 p. 1439-1444
6 p.
 article
79 Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs Salm, C.
 2006
 46 9-11 p. 1617-1622
6 p.
 article
80 Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection Ispasoiu, Radu
 2006
 46 9-11 p. 1504-1507
4 p.
 article
81 Reliability and wearout characterisation of LEDs Jacob, P.
 2006
 46 9-11 p. 1711-1714
4 p.
 article
82 Reliability challenges in the nanoelectronics era van Roosmalen, A.J.
 2006
 46 9-11 p. 1403-1414
12 p.
 article
83 Reliability estimation of aeronautic component by accelerated tests Charruau, S.
 2006
 46 9-11 p. 1451-1457
7 p.
 article
84 Reliability modelling for packages in flexible end-products van Driel, W.D.
 2006
 46 9-11 p. 1880-1885
6 p.
 article
85 Reliability of high temperature solder alternatives McCluskey, F.P.
 2006
 46 9-11 p. 1910-1914
5 p.
 article
86 Strong electron irradiation hardness of 852 nm Al-free laser diodes Boutillier, M.
 2006
 46 9-11 p. 1715-1719
5 p.
 article
87 Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition Yang, S.Y.
 2006
 46 9-11 p. 1904-1909
6 p.
 article
88 Study of performance degradations in DC-DC converter due to hot carrier stress by simulation Yu, C.
 2006
 46 9-11 p. 1840-1843
4 p.
 article
89 Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current Perpiñà, X.
 2006
 46 9-11 p. 1834-1839
6 p.
 article
90 The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics Lloyd, J.R.
 2006
 46 9-11 p. 1643-1647
5 p.
 article
91 The high frequency behaviour of high voltage and current IGBT modules Abbate, C.
 2006
 46 9-11 p. 1848-1853
6 p.
 article
92 Thermal characterization and modeling of power hybrid converters for distributed power systems Cova, P.
 2006
 46 9-11 p. 1760-1765
6 p.
 article
93 The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis Yew, M.C.
 2006
 46 9-11 p. 1874-1879
6 p.
 article
94 Time gating imaging through thick silicon substrate: a new step towards backside characterisation Rampnoux, J.M.
 2006
 46 9-11 p. 1520-1524
5 p.
 article
95 Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation Douin, A.
 2006
 46 9-11 p. 1514-1519
6 p.
 article
96 Transient-induced latch-up test setup for wafer-level and package-level Bonfert, D.
 2006
 46 9-11 p. 1629-1633
5 p.
 article
97 Use of signal processing imaging for the study of a 3D package in harsh environment Augereau, Jean
 2006
 46 9-11 p. 1922-1925
4 p.
 article
                             97 results found
 
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