| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new threshold voltage model for deep-submicron MOSFETs with nonuniform substrate dopings
|
Zhang, Wen-liang
|
|
1998
|
38 |
9 |
p. 1465-1469
5 p.
|
artikel
|
| 2 |
A phenomenon of charge trapping saturation induced by rapid thermal annealing
|
Wong, Shyh-Chyi
|
|
1998
|
38 |
9 |
p. 1391-1399
9 p.
|
artikel
|
| 3 |
Application of direct-tunneling gate oxides to high-performance CMOS
|
Momose, Hisayo Sasaki
|
|
1998
|
38 |
9 |
p. 1413-1423
11 p.
|
artikel
|
| 4 |
A study of tilt angle effect on Halo PMOS performance
|
Su, Jiong-Guang
|
|
1998
|
38 |
9 |
p. 1503-1512
10 p.
|
artikel
|
| 5 |
Basics and applications of charge pumping in submicron MOSFETs© 1997 IEEE. Reprinted, with permission, from Proc. 1997 21st International Conference on Microelectronics, Nis, Yugoslavia, 14–17 September 1997, Vol. 2, pp. 581–589.
|
Groeseneken, Guido
|
|
1998
|
38 |
9 |
p. 1379-1389
11 p.
|
artikel
|
| 6 |
Comparison of latchup immunity for silicided source/drain at different n+ implant energy
|
Leong, Kam-Chew
|
|
1998
|
38 |
9 |
p. 1401-1405
5 p.
|
artikel
|
| 7 |
Current status of failure analysis for ULSIs© 1997 IEEE. Reprinted with permission, from Proc. 1997 21st International Conference on Microelectronics, Nis, Yugoslavia, 14–17 September 1997, Vol. 2, pp. 591–598.
|
Nakajima, S
|
|
1998
|
38 |
9 |
p. 1369-1377
9 p.
|
artikel
|
| 8 |
Discrete random dopant distribution effects in nanometer-scale MOSFETs
|
Philip Wong, Hon-Sum
|
|
1998
|
38 |
9 |
p. 1447-1456
10 p.
|
artikel
|
| 9 |
Editorial
|
|
|
1998
|
38 |
9 |
p. 1367-1368
2 p.
|
artikel
|
| 10 |
Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
|
Cha, C.L.
|
|
1998
|
38 |
9 |
p. 1439-1446
8 p.
|
artikel
|
| 11 |
Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
|
Huang, L.
|
|
1998
|
38 |
9 |
p. 1425-1431
7 p.
|
artikel
|
| 12 |
n+/p ultra-shallow junction formation with plasma immersion ion implantation
|
Yang, B.L
|
|
1998
|
38 |
9 |
p. 1489-1494
6 p.
|
artikel
|
| 13 |
Plasma doping for ultra-shallow junctions
|
Chan, Chung
|
|
1998
|
38 |
9 |
p. 1485-1488
4 p.
|
artikel
|
| 14 |
Simulation of electronic structure of Si–Si bond traps in oxide/nitride/oxide structure
|
Gritsenko, V.A.
|
|
1998
|
38 |
9 |
p. 1457-1464
8 p.
|
artikel
|
| 15 |
Stability of NiSi in boron-doped polysilicon lines
|
Poon, M.C
|
|
1998
|
38 |
9 |
p. 1499-1502
4 p.
|
artikel
|
| 16 |
Study of MOS gate dielectric breakdown due to drain avalanche breakdown
|
Wong, H.
|
|
1998
|
38 |
9 |
p. 1433-1438
6 p.
|
artikel
|
| 17 |
Sub-quarter micron silicon integrated circuits and single wafer processing
|
Singh, R
|
|
1998
|
38 |
9 |
p. 1471-1483
13 p.
|
artikel
|
| 18 |
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
|
Huang, M.Q
|
|
1998
|
38 |
9 |
p. 1407-1411
5 p.
|
artikel
|
| 19 |
Thermal stability of cobalt and nickel silicides
|
Poon, M.C
|
|
1998
|
38 |
9 |
p. 1495-1498
4 p.
|
artikel
|
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