| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
1.6 A GaN Schottky rectifiers on bulk GaN substrates
|
Johnson, J.W.
|
|
2002
|
46 |
6 |
p. 911-913
3 p.
|
artikel
|
| 2 |
A hydrodynamic equivalent circuit model for the Gunn diode
|
Kao, Chia-Hsiung
|
|
2002
|
46 |
6 |
p. 915-923
9 p.
|
artikel
|
| 3 |
A physics-based model for the substrate resistance of MOSFETs
|
Gao, X.F.
|
|
2002
|
46 |
6 |
p. 853-857
5 p.
|
artikel
|
| 4 |
Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models
|
Walkey, David J.
|
|
2002
|
46 |
6 |
p. 819-826
8 p.
|
artikel
|
| 5 |
Depletion lengths in semiconductor nanostructures
|
Luscombe, J.H.
|
|
2002
|
46 |
6 |
p. 885-889
5 p.
|
artikel
|
| 6 |
Determination of parameters of radiation induced traps in silicon
|
Siemieniec, R.
|
|
2002
|
46 |
6 |
p. 891-901
11 p.
|
artikel
|
| 7 |
Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistors
|
Noor Mohammad, S.
|
|
2002
|
46 |
6 |
p. 867-876
10 p.
|
artikel
|
| 8 |
Dynamic finite element approach for analyzing stress and distortion in multilevel devices
|
Lakhsasi, A.
|
|
2002
|
46 |
6 |
p. 925-932
8 p.
|
artikel
|
| 9 |
Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench
|
Suliman, S.A.
|
|
2002
|
46 |
6 |
p. 837-845
9 p.
|
artikel
|
| 10 |
Evaluation of rapid thermal processing systems for use in CMOS fabrication
|
Trivedi, V
|
|
2002
|
46 |
6 |
p. 777-783
7 p.
|
artikel
|
| 11 |
GaN pnp bipolar junction transistors operated to 250 °C
|
Zhang, A.P
|
|
2002
|
46 |
6 |
p. 933-936
4 p.
|
artikel
|
| 12 |
Influence of SiO2 PECVD layers on p-GaN rectifiers
|
Baik, K.H.
|
|
2002
|
46 |
6 |
p. 803-806
4 p.
|
artikel
|
| 13 |
InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
|
Radhakrishnan, K.
|
|
2002
|
46 |
6 |
p. 877-883
7 p.
|
artikel
|
| 14 |
On-voltage analysis of a forward-biased pn-junction: an interconnect model for CMOS device simulation
|
Yamaguchi, Ken
|
|
2002
|
46 |
6 |
p. 807-817
11 p.
|
artikel
|
| 15 |
Optimum design of punch-through junction used in bipolar and unipolar high voltage power devices
|
He, Jin
|
|
2002
|
46 |
6 |
p. 847-851
5 p.
|
artikel
|
| 16 |
Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors
|
Baca, A.G.
|
|
2002
|
46 |
6 |
p. 797-801
5 p.
|
artikel
|
| 17 |
Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique
|
Hung, C.C.
|
|
2002
|
46 |
6 |
p. 791-795
5 p.
|
artikel
|
| 18 |
Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes
|
Brody, Jed
|
|
2002
|
46 |
6 |
p. 859-866
8 p.
|
artikel
|
| 19 |
Striped anode engineering: a concept for fast switching power devices
|
Luther-King, N.
|
|
2002
|
46 |
6 |
p. 903-909
7 p.
|
artikel
|
| 20 |
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
|
Danielsson, E.
|
|
2002
|
46 |
6 |
p. 827-835
9 p.
|
artikel
|
| 21 |
Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors
|
Shamir, N.
|
|
2002
|
46 |
6 |
p. 785-789
5 p.
|
artikel
|
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