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                                       Details for article 13 of 21 found articles
 
 
  InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
 
 
Title: InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
Author: Radhakrishnan, K.
Yuan, K.
Zheng, H.Q.
Appeared in: Solid-state electronics
Paging: Volume 46 (2002) nr. 6 pages 7 p.
Year: 2002
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 21 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands