| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general theory of an intensity-modulated beam method for determination of diffusion length, diffusion constant, lifetime, surface recombination velocity and absorption coefficient in a semiconductor material
|
Gupta, Sudha
|
|
1988
|
31 |
9 |
p. 1401-1407
7 p.
|
artikel
|
| 2 |
Analytical model for leakage current in InGaAsP avalanche photodiodes
|
Elshabini-Riad, Aicha
|
|
1988
|
31 |
9 |
p. 1413-1420
8 p.
|
artikel
|
| 3 |
A new experimental method to determine the saturation voltage of a small-geometry MOSFET
|
Jang, Wen-Yueh
|
|
1988
|
31 |
9 |
p. 1421-1431
11 p.
|
artikel
|
| 4 |
Built-in space charge at junctions between heavily doped and semi-insulating GaAs layers
|
Lehovec, K.
|
|
1988
|
31 |
9 |
p. 1433-1440
8 p.
|
artikel
|
| 5 |
Corrigendum
|
|
|
1988
|
31 |
9 |
p. I-
1 p.
|
artikel
|
| 6 |
Dynamic screening for ionized impurity scattering in degenerate semiconductors
|
Chung, Wei-Ye
|
|
1988
|
31 |
9 |
p. 1369-1374
6 p.
|
artikel
|
| 7 |
Editorial—Software survey section
|
|
|
1988
|
31 |
9 |
p. III-V
nvt p.
|
artikel
|
| 8 |
Electromigration in bipolar NPN transistors
|
Wada, T.
|
|
1988
|
31 |
9 |
p. 1409-1412
4 p.
|
artikel
|
| 9 |
Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors
|
Marty, A.
|
|
1988
|
31 |
9 |
p. 1375-1382
8 p.
|
artikel
|
| 10 |
Fine structure of heat flow path in semiconductor devices: A measurement and identification method
|
Székely, Vladimir
|
|
1988
|
31 |
9 |
p. 1363-1368
6 p.
|
artikel
|
| 11 |
Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons
|
Lin, Wallace Wan-Li
|
|
1988
|
31 |
9 |
p. 1451-1459
9 p.
|
artikel
|
| 12 |
Lateral PIN diodes for silicon-on-insulator monolithic microwave integrated circuits
|
Wu, S.
|
|
1988
|
31 |
9 |
p. 1397-1400
4 p.
|
artikel
|
| 13 |
Measurement of layers of submicron thickness with the aid of a microdensitometer
|
Teh, S.T.
|
|
1988
|
31 |
9 |
p. 1461-1463
3 p.
|
artikel
|
| 14 |
On the design of tunable quantum well infrared photodetectors
|
Ikonić, Z.
|
|
1988
|
31 |
9 |
p. 1447-1449
3 p.
|
artikel
|
| 15 |
On the recombination and diffusion limited surface recombination velocities
|
Dhariwal, S.R.
|
|
1988
|
31 |
9 |
p. 1355-1361
7 p.
|
artikel
|
| 16 |
Response to “numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor”
|
Taylor, G.W.
|
|
1988
|
31 |
9 |
p. 1467-1468
2 p.
|
artikel
|
| 17 |
Response to the comments by Simmons and Taylor
|
Meyyappan, M.
|
|
1988
|
31 |
9 |
p. 1469-
1 p.
|
artikel
|
| 18 |
Simplified modelling of delays in the emitter-base junction
|
Negus, K.J.
|
|
1988
|
31 |
9 |
p. 1464-1466
3 p.
|
artikel
|
| 19 |
Threshold voltage characteristics of ion-implanted depletion MOSFETs
|
Tarasewicz, S.W.
|
|
1988
|
31 |
9 |
p. 1441-1446
6 p.
|
artikel
|
| 20 |
Variance of 1 f γ noise
|
Ambrózy, A.
|
|
1988
|
31 |
9 |
p. 1391-1395
5 p.
|
artikel
|
| 21 |
Voltage saturation at the high-low junction and its effect on the I-V characteristics of a diode
|
Dhariwal, S.R.
|
|
1988
|
31 |
9 |
p. 1383-1389
7 p.
|
artikel
|
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