nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A simple static circuit model for low-high junctions
|
Sabnis, Anant G. |
|
1979 |
22 |
7 |
p. 667-669 3 p. |
artikel |
2 |
Electrical characteristics of GaAs MIS Schottky diodes
|
Ashok, S. |
|
1979 |
22 |
7 |
p. 621-631 11 p. |
artikel |
3 |
Emission coefficients for electron and hole traps in silicon
|
Chen, J-W |
|
1979 |
22 |
7 |
p. 684-686 3 p. |
artikel |
4 |
Energy levels and degeneracy ratios for magnesium in n-type silicon
|
Ohta, Eiji |
|
1979 |
22 |
7 |
p. 677-682 6 p. |
artikel |
5 |
Enhanced carrier collection at grain-boundary barriers in solar cells made from large grain polycrystalline material
|
Mataré, Herbert F. |
|
1979 |
22 |
7 |
p. 651-658 8 p. |
artikel |
6 |
Initial turn-on area of gate-controlled thyristors
|
Danielsson, Bo E. |
|
1979 |
22 |
7 |
p. 659-662 4 p. |
artikel |
7 |
Light detector for camera using a GaAs1−x P x photo diode
|
Nakamura, T. |
|
1979 |
22 |
7 |
p. 639-644 6 p. |
artikel |
8 |
Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach
|
Chwang, R. |
|
1979 |
22 |
7 |
p. 599-620 22 p. |
artikel |
9 |
P-MOS field inversion voltage enhancement via a chromic acid clean
|
Harper, Francis |
|
1979 |
22 |
7 |
p. 683-684 2 p. |
artikel |
10 |
Redistribution of dopant impurities in oxidizing ambients
|
Hill, Anthony C. |
|
1979 |
22 |
7 |
p. 633-637 5 p. |
artikel |
11 |
Surface and interface depletion corrections to free carrier-density determinations by hall measurements
|
Chandra, Amitabh |
|
1979 |
22 |
7 |
p. 645-650 6 p. |
artikel |
12 |
The effect of RF annealing upon electron-beam irradiated MIS structures
|
Ma, W.H-L. |
|
1979 |
22 |
7 |
p. 663-666 4 p. |
artikel |
13 |
Transient response of an inhomogeneous MOS transmission line
|
Johnson, Stevens F. |
|
1979 |
22 |
7 |
p. 671-675 5 p. |
artikel |