| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A simple static circuit model for low-high junctions
|
Sabnis, Anant G.
|
|
1979
|
22 |
7 |
p. 667-669
3 p.
|
article
|
| 2 |
Electrical characteristics of GaAs MIS Schottky diodes
|
Ashok, S.
|
|
1979
|
22 |
7 |
p. 621-631
11 p.
|
article
|
| 3 |
Emission coefficients for electron and hole traps in silicon
|
Chen, J-W
|
|
1979
|
22 |
7 |
p. 684-686
3 p.
|
article
|
| 4 |
Energy levels and degeneracy ratios for magnesium in n-type silicon
|
Ohta, Eiji
|
|
1979
|
22 |
7 |
p. 677-682
6 p.
|
article
|
| 5 |
Enhanced carrier collection at grain-boundary barriers in solar cells made from large grain polycrystalline material
|
Mataré, Herbert F.
|
|
1979
|
22 |
7 |
p. 651-658
8 p.
|
article
|
| 6 |
Initial turn-on area of gate-controlled thyristors
|
Danielsson, Bo E.
|
|
1979
|
22 |
7 |
p. 659-662
4 p.
|
article
|
| 7 |
Light detector for camera using a GaAs1−x P x photo diode
|
Nakamura, T.
|
|
1979
|
22 |
7 |
p. 639-644
6 p.
|
article
|
| 8 |
Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach
|
Chwang, R.
|
|
1979
|
22 |
7 |
p. 599-620
22 p.
|
article
|
| 9 |
P-MOS field inversion voltage enhancement via a chromic acid clean
|
Harper, Francis
|
|
1979
|
22 |
7 |
p. 683-684
2 p.
|
article
|
| 10 |
Redistribution of dopant impurities in oxidizing ambients
|
Hill, Anthony C.
|
|
1979
|
22 |
7 |
p. 633-637
5 p.
|
article
|
| 11 |
Surface and interface depletion corrections to free carrier-density determinations by hall measurements
|
Chandra, Amitabh
|
|
1979
|
22 |
7 |
p. 645-650
6 p.
|
article
|
| 12 |
The effect of RF annealing upon electron-beam irradiated MIS structures
|
Ma, W.H-L.
|
|
1979
|
22 |
7 |
p. 663-666
4 p.
|
article
|
| 13 |
Transient response of an inhomogeneous MOS transmission line
|
Johnson, Stevens F.
|
|
1979
|
22 |
7 |
p. 671-675
5 p.
|
article
|
Journal description