| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active layer inhomogeneities in DH laser wafers
|
Elliott, C.R.
|
|
1979
|
22 |
4 |
p. 446-448
3 p.
|
artikel
|
| 2 |
A multilayer exponential model for spreading resistance calculations
|
Choo, S.C.
|
|
1979
|
22 |
4 |
p. 405-415
11 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1979
|
22 |
4 |
p. 449-
1 p.
|
artikel
|
| 4 |
Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon
|
Forbes, Leonard
|
|
1979
|
22 |
4 |
p. 391-397
7 p.
|
artikel
|
| 5 |
Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers
|
Holonyak Jr., N.
|
|
1979
|
22 |
4 |
p. 431-433
3 p.
|
artikel
|
| 6 |
Corner breakdown in MOS transistors with lightly-doped drains
|
Coe, D.J.
|
|
1979
|
22 |
4 |
p. 444-446
3 p.
|
artikel
|
| 7 |
Current oscillations due to filamentary double injection in diodes with deep levels
|
Dudeck, Ingo
|
|
1979
|
22 |
4 |
p. 361-365
5 p.
|
artikel
|
| 8 |
Editorial announcement
|
|
|
1979
|
22 |
4 |
p. I-
1 p.
|
artikel
|
| 9 |
Effect of silicon film thickness on threshold voltage of SOS-MOSFETs
|
Sasaki, N.
|
|
1979
|
22 |
4 |
p. 417-421
5 p.
|
artikel
|
| 10 |
Effect of substrate generation current on oxide I-V measurement on p-type MOS structures
|
Lee, Han-Sheng
|
|
1979
|
22 |
4 |
p. 385-389
5 p.
|
artikel
|
| 11 |
Field and carrier current density profiles in linearly graded silicon avalanche diodes
|
Ghosh, R.
|
|
1979
|
22 |
4 |
p. 367-371
5 p.
|
artikel
|
| 12 |
Generalization of thermionic emission theory. Temperature dependence of GaAs intervalley gap from measurements on Schottky diodes
|
Salardi, G.
|
|
1979
|
22 |
4 |
p. 435-441
7 p.
|
artikel
|
| 13 |
Minority carrier induced modulation noise in MIS tunnel diodes
|
Viktorovitch, P.
|
|
1979
|
22 |
4 |
p. 379-383
5 p.
|
artikel
|
| 14 |
On Fletcher's boundary conditions
|
van Vliet, K.M.
|
|
1979
|
22 |
4 |
p. 443-444
2 p.
|
artikel
|
| 15 |
Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors
|
Brown, W.D.
|
|
1979
|
22 |
4 |
p. 373-378
6 p.
|
artikel
|
| 16 |
Small-signal theory of the transistor transit-time oscillator (translator)
|
Wright, G.T.
|
|
1979
|
22 |
4 |
p. 399-403
5 p.
|
artikel
|
| 17 |
Temperature dependent threshold behavior of depletion mode MOSFETs
|
Gaensslen, F.H.
|
|
1979
|
22 |
4 |
p. 423-430
8 p.
|
artikel
|
| 18 |
The numerical analysis of anomalous doping profiles of phosphorus in silicon
|
Arandjelović, V.
|
|
1979
|
22 |
4 |
p. 355-359
5 p.
|
artikel
|
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