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Journal description
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Details for article 4 of 18 found articles
| Title: |
Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon |
| Author: |
Forbes, Leonard Brown, René Sheikholeslam, Mahmood Current, Wayne |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 22 (1979) nr. 4 pages 7 p. |
| Year: |
1979 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 18 found articles
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