| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits
|
Matsuura, Kai
|
|
2019
|
153 |
C |
p. 59-66
|
artikel
|
| 2 |
A Sub-35 pW Axon-Hillock artificial neuron circuit
|
Danneville, F.
|
|
2019
|
153 |
C |
p. 88-92
|
artikel
|
| 3 |
Bias-stress effects in diF-TES-ADT field-effect transistors
|
Kim, Chang-Hyun
|
|
2019
|
153 |
C |
p. 23-26
|
artikel
|
| 4 |
DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors
|
Ramirez-Garcia, E.
|
|
2019
|
153 |
C |
p. 1-7
|
artikel
|
| 5 |
Editorial Board
|
|
|
2019
|
153 |
C |
p. ii
|
artikel
|
| 6 |
Efficient bimetallic nanoparticles embedded-porous silicon CO gas sensor
|
Alwan, Alwan M.
|
|
2019
|
153 |
C |
p. 37-45
|
artikel
|
| 7 |
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
|
Khosa, R.Y.
|
|
2019
|
153 |
C |
p. 52-58
|
artikel
|
| 8 |
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory
|
Lee, Sangmin
|
|
2019
|
153 |
C |
p. 8-11
|
artikel
|
| 9 |
Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET
|
Shin, Jaemin
|
|
2019
|
153 |
C |
p. 12-15
|
artikel
|
| 10 |
Gas sensing characteristics of the FET-type gas sensor having inkjet-printed WS2 sensing layer
|
Jeong, Yujeong
|
|
2019
|
153 |
C |
p. 27-32
|
artikel
|
| 11 |
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
|
Choi, Wooseok
|
|
2019
|
153 |
C |
p. 79-83
|
artikel
|
| 12 |
Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer
|
Guo, Yangyang
|
|
2019
|
153 |
C |
p. 46-51
|
artikel
|
| 13 |
Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness
|
Hwang, Jin Young
|
|
2019
|
153 |
C |
p. 93-98
|
artikel
|
| 14 |
Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
|
Dong, Chengyuan
|
|
2019
|
153 |
C |
p. 74-78
|
artikel
|
| 15 |
Lightweight flexible indium-free oxide TFTs with AND logic function employing chitosan biopolymer as self-supporting layer
|
Feng, Guangdi
|
|
2019
|
153 |
C |
p. 16-22
|
artikel
|
| 16 |
Multifactor lithographic process conditions of 3D single mode waveguide fabrication
|
Kong, Ha-Sung
|
|
2019
|
153 |
C |
p. 84-87
|
artikel
|
| 17 |
Optimization of PFN thickness in inverted high-performance PTB7:PC70BM solar cells
|
Reséndiz, L.
|
|
2019
|
153 |
C |
p. 33-36
|
artikel
|
| 18 |
The influence of grain boundary interface traps on electrical characteristics of top select gate transistor in 3D NAND flash memory
|
Zou, Xingqi
|
|
2019
|
153 |
C |
p. 67-73
|
artikel
|
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