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Journal description
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Details for article 3 of 18 found articles
| Title: |
Bias-stress effects in diF-TES-ADT field-effect transistors |
| Author: |
Kim, Chang-Hyun |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 153 (2019) nr. C pages 23-26 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 18 found articles
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