| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD
|
de Theije, F.K.
|
|
1999
|
197 |
1-2 |
p. 37-47
11 p.
|
artikel
|
| 2 |
A new single crystal growth method of (Bi,Pb)2Sr2CaCu2O z superconductor
|
Mansori, M
|
|
1999
|
197 |
1-2 |
p. 141-146
6 p.
|
artikel
|
| 3 |
A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy
|
Walther, T
|
|
1999
|
197 |
1-2 |
p. 113-128
16 p.
|
artikel
|
| 4 |
A semi-analytical model of microsegregation and coarsening in a binary alloy
|
Voller, V.R.
|
|
1999
|
197 |
1-2 |
p. 333-340
8 p.
|
artikel
|
| 5 |
A semi-analytical model of microsegregation in a binary alloy
|
Voller, V.R.
|
|
1999
|
197 |
1-2 |
p. 325-332
8 p.
|
artikel
|
| 6 |
Buoyant melt flows under the influence of steady and rotating magnetic fields
|
Mößner, Ralph
|
|
1999
|
197 |
1-2 |
p. 341-354
14 p.
|
artikel
|
| 7 |
Characterization of solid source MBE-grown In0.48Ga0.52P/In0.2Ga0.8As/GaAs structures using X-ray reflectivity technique
|
Yoon, S.F.
|
|
1999
|
197 |
1-2 |
p. 59-66
8 p.
|
artikel
|
| 8 |
Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
|
Miyamoto, Tomoyuki
|
|
1999
|
197 |
1-2 |
p. 67-72
6 p.
|
artikel
|
| 9 |
Chemical reaction process and the single crystal growth of CuInS2 compound
|
Matsushita, Hiroaki
|
|
1999
|
197 |
1-2 |
p. 169-176
8 p.
|
artikel
|
| 10 |
Collective effects during crystal growth in the presence of mobile nonreactive impurities: experiments and simulations
|
Vandewalle, N.
|
|
1999
|
197 |
1-2 |
p. 317-324
8 p.
|
artikel
|
| 11 |
Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE
|
Keiper, D
|
|
1999
|
197 |
1-2 |
p. 25-30
6 p.
|
artikel
|
| 12 |
Continuous and discontinuous metal-organic vapour phase epitaxy of coherent self-assembled islands:
|
Seifert, Werner
|
|
1999
|
197 |
1-2 |
p. 19-24
6 p.
|
artikel
|
| 13 |
Crystal growth of WSi2 on a W(110) surface
|
Kawanowa, H
|
|
1999
|
197 |
1-2 |
p. 163-168
6 p.
|
artikel
|
| 14 |
Crystal growth of YCa4O(BO3)3 and its orientation
|
Ye, Qing
|
|
1999
|
197 |
1-2 |
p. 228-235
8 p.
|
artikel
|
| 15 |
Crystallization of high molecular weight urokinase
|
Gamarnik, M.Y.
|
|
1999
|
197 |
1-2 |
p. 254-256
3 p.
|
artikel
|
| 16 |
Dependence of the surface resistance on the microdefects in YBa2Cu3O7−X films
|
Ueno, Yoshiki
|
|
1999
|
197 |
1-2 |
p. 376-378
3 p.
|
artikel
|
| 17 |
Doping behavior of In0.1Ga0.9N codoped with Si and Zn
|
Lee, Cheul-Ro
|
|
1999
|
197 |
1-2 |
p. 78-83
6 p.
|
artikel
|
| 18 |
Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy
|
Jang, Kee-Youn
|
|
1999
|
197 |
1-2 |
p. 54-58
5 p.
|
artikel
|
| 19 |
Effect of starting melt composition on crystal growth of La3Ga5SiO14
|
Takeda, H.
|
|
1999
|
197 |
1-2 |
p. 204-209
6 p.
|
artikel
|
| 20 |
Effects of a cusp magnetic field on the oscillatory convection coupled with crucible rotation in Czochralski crystal growth
|
Lee, Y.-S.
|
|
1999
|
197 |
1-2 |
p. 307-316
10 p.
|
artikel
|
| 21 |
Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production
|
Shi, W
|
|
1999
|
197 |
1-2 |
p. 89-94
6 p.
|
artikel
|
| 22 |
Electron microscopic studies on the initial process of lysozyme crystal growth
|
Michinomae, M
|
|
1999
|
197 |
1-2 |
p. 257-262
6 p.
|
artikel
|
| 23 |
Equiaxed dendritic solidification in supercooled melts
|
Pines, Vladimir
|
|
1999
|
197 |
1-2 |
p. 355-363
9 p.
|
artikel
|
| 24 |
Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth
|
Wang, J.
|
|
1999
|
197 |
1-2 |
p. 48-53
6 p.
|
artikel
|
| 25 |
Growth modes in vapour-phase prepared orthorhombic molybdenum trioxide crystals
|
Balakumar, S
|
|
1999
|
197 |
1-2 |
p. 186-194
9 p.
|
artikel
|
| 26 |
Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation
|
Zhou, Guangwen
|
|
1999
|
197 |
1-2 |
p. 129-135
7 p.
|
artikel
|
| 27 |
Growth of 6H and 4H–SiC by sublimation epitaxy
|
Syväjärvi, M.
|
|
1999
|
197 |
1-2 |
p. 155-162
8 p.
|
artikel
|
| 28 |
Growth of single CuInSe2 crystals by the traveling heater method and their characterization
|
Lyahovitskaya, Vera
|
|
1999
|
197 |
1-2 |
p. 177-185
9 p.
|
artikel
|
| 29 |
Growth of zinc thiourea sulfate (ZTS) single crystals:
|
Ushasree, P.M.
|
|
1999
|
197 |
1-2 |
p. 216-220
5 p.
|
artikel
|
| 30 |
Impurity effects on crystallization rates of n-hexadecane in oil-in-water emulsions
|
Kaneko, N
|
|
1999
|
197 |
1-2 |
p. 263-270
8 p.
|
artikel
|
| 31 |
InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(001)
|
Wu, J.
|
|
1999
|
197 |
1-2 |
p. 95-98
4 p.
|
artikel
|
| 32 |
Incorporation of Mg in GaN grown by molecular beam epitaxy
|
Orton, J.W.
|
|
1999
|
197 |
1-2 |
p. 7-11
5 p.
|
artikel
|
| 33 |
In situ measurement of the growth rate of YBa2Cu3O x single crystals
|
Aswal, D.K
|
|
1999
|
197 |
1-2 |
p. 379-382
4 p.
|
artikel
|
| 34 |
Investigations on the growth of Bi2TeO5 and TeO2 crystals
|
Kumaragurubaran, S.
|
|
1999
|
197 |
1-2 |
p. 210-215
6 p.
|
artikel
|
| 35 |
Laser heated pedestal growth and characterization of zinc lithium niobate crystals
|
Ferriol, M
|
|
1999
|
197 |
1-2 |
p. 221-227
7 p.
|
artikel
|
| 36 |
Liquid phase epitaxial growth of SiC
|
Syväjärvi, M
|
|
1999
|
197 |
1-2 |
p. 147-154
8 p.
|
artikel
|
| 37 |
One-dimensional growth mechanism of crystalline silicon nanowires
|
Zhang, Y.F.
|
|
1999
|
197 |
1-2 |
p. 136-140
5 p.
|
artikel
|
| 38 |
Phase stability, solubility and hydrothermal crystal growth of PbTiO3
|
Gelabert, M.C.
|
|
1999
|
197 |
1-2 |
p. 195-203
9 p.
|
artikel
|
| 39 |
Post-growth, In doping of CdTe single crystals via vapor phase
|
Lyahovitskaya, Vera
|
|
1999
|
197 |
1-2 |
p. 106-112
7 p.
|
artikel
|
| 40 |
Primary cellular/dendritic spacing selection of Al–Zn alloy during unidirectional solidification
|
Feng, J
|
|
1999
|
197 |
1-2 |
p. 393-395
3 p.
|
artikel
|
| 41 |
Pseudo-solubilities of potassium sulfate in water in the presence of crystal-growth and -dissolution suppressor iron(III) impurities
|
Kubota, Noriaki
|
|
1999
|
197 |
1-2 |
p. 388-392
5 p.
|
artikel
|
| 42 |
p-Type co-doping study of GaN by photoluminescence
|
Zhang, Jian-Ping
|
|
1999
|
197 |
1-2 |
p. 368-371
4 p.
|
artikel
|
| 43 |
Rapid growth of KH2PO4 crystals in aqueous solution with additives
|
Shangfeng, Yang
|
|
1999
|
197 |
1-2 |
p. 383-387
5 p.
|
artikel
|
| 44 |
RHEED characterization of InAs/GaAs grown by MBE
|
Cai, L.C.
|
|
1999
|
197 |
1-2 |
p. 364-367
4 p.
|
artikel
|
| 45 |
RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate
|
Leem, Jae-Young
|
|
1999
|
197 |
1-2 |
p. 84-88
5 p.
|
artikel
|
| 46 |
Solidification microstructure selection in the Al-rich Al–La, Al–Ce and Al–Nd systems
|
Hawksworth, A.
|
|
1999
|
197 |
1-2 |
p. 286-296
11 p.
|
artikel
|
| 47 |
Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures
|
Wu, Jun
|
|
1999
|
197 |
1-2 |
p. 73-77
5 p.
|
artikel
|
| 48 |
Strong band gap narrowing in quasi-binary (GaSb)1−x (InAs) x crystals grown from melt
|
Dutta, P.S
|
|
1999
|
197 |
1-2 |
p. 1-6
6 p.
|
artikel
|
| 49 |
Surface irregularities of MBE grown cubic GaN layers
|
Lima, A.P.
|
|
1999
|
197 |
1-2 |
p. 31-36
6 p.
|
artikel
|
| 50 |
The impact of twinning on the morphology of γ-Al(OH)3 crystals
|
Sweegers, C
|
|
1999
|
197 |
1-2 |
p. 244-253
10 p.
|
artikel
|
| 51 |
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
|
Cheng, T.S.
|
|
1999
|
197 |
1-2 |
p. 12-18
7 p.
|
artikel
|
| 52 |
Theoretical analysis of changes in habit of growing crystals in response to variable growth rates of individual faces
|
Prywer, Jolanta
|
|
1999
|
197 |
1-2 |
p. 271-285
15 p.
|
artikel
|
| 53 |
Theoretical study of the initial gas-phase reactions of TaN CVD
|
Okamoto, Yasuharu
|
|
1999
|
197 |
1-2 |
p. 236-243
8 p.
|
artikel
|
| 54 |
Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides
|
Koukitu, Akinori
|
|
1999
|
197 |
1-2 |
p. 99-105
7 p.
|
artikel
|
| 55 |
Transition from regular to irregular thermal wave by coupling of natural convection with rotating flow in Czochralski crystal growth
|
Lee, Y.-S.
|
|
1999
|
197 |
1-2 |
p. 297-306
10 p.
|
artikel
|
| 56 |
Uniformity enhancement of the self-organized InAs quantum dots
|
Zhu, Haijun
|
|
1999
|
197 |
1-2 |
p. 372-375
4 p.
|
artikel
|
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