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Details for article 12 of 15 found articles
| Title: |
PZT Based MFS Structure for FeFET |
| Author: |
Shao, Tian-Qi Ren, Tian-Ling Wei, Chao-Gang Wang, Xiao-Ning Li, Chun-Xiao Liu, Jian-She Liu, Li-Tian Zhu, Jun Li, Zhi-Jian |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 57 (2003) nr. 1 pages 1241-1248 |
| Year: |
2003 |
| Contents: |
Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for Metal-Ferroelectric-Semiconductor FET (MFSFET) devices. PZT based MFS capacitors using lead titanate (PT) as seeding layers have been respectively prepared on p-type 〈111〉 and n-type 〈100〉 silicon wafers directly by a sol-gel method. PZT/PT films are final annealed at 650°C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 V and 5 V under the polarization voltages of ±5 V and ±10 V correspondingly. The MFS structure can be valuable for MFSFET applications. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 15 found articles
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