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Details for article 8 of 47 found articles
| Title: |
Barrier mechanism of Pt/Ta and Pt/Ti layers for SrTiO3 thin film capacitors on Si |
| Author: |
Takemura, Koichi Sakuma, Toshlyukl Matsubara, Shogo Yamamichi, Shintaro Yamaguchi, Hiromu Miyasaka, Yoichi |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 4 (1994) nr. 4 pages 305-313 |
| Year: |
1994-06-01 |
| Contents: |
The barrier effect of Pt/Ta and Pt/Ti has been investigated, when used as bottom electrodes for SrTiO3 thin film capacitors on Si. The Pt/Ta/Si stacks were more stable than the Pt/Ti/Si, both in vacuum and in oxygen annealing. Though the Pt/Ta bilayer was suitable for the SrTiO3 deposition at 400d`C, its resistivity became slightly higher after the deposition at 600d`C, due to Ta layer oxidation during the SrTiO3 deposition. This would result in a contact resistance problem for high density dynamic random access memory application. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 47 found articles
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