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                                       Details for article 9 of 47 found articles
 
 
  Characteristics of barium magnesium fluoride (BMF) based MIS capacitors and mfsfets
 
 
Title: Characteristics of barium magnesium fluoride (BMF) based MIS capacitors and mfsfets
Author: Kalkur, T. S.
Appeared in: Integrated ferroelectrics
Paging: Volume 4 (1994) nr. 4 pages 357-364
Year: 1994-06-01
Contents: BaMgF4 (BMF) films was deposited on p-Si by vacuum evaporation with substrate temperature in the range of 100-400 C. Films deposited at 100 C were amorphous and became polycrystalline at an annealing temperature of 600 C, whereas films deposited above 300 C were polycrystalline. X-ray diffraction shows the formation of orthorombic phase with a = 4.130 A, b = 5.189 A, and c = 14.510 A. The deposited BMF films have been encapsulated with various materials like ZrO2 and amorphous Si. The capacitance-voltage characteristics of MFS capacitors show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The current-voltage characteristics of the MOSFETs show a threshold voltage shift which confirms the non-volatile memory behaviour.
Publisher: Taylor & Francis
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 47 found articles
 
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