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                                       Details for article 16 of 35 found articles
 
 
  Erratum to “Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen” [Microelectron. Eng. 88 (7) (2011) 1457–1460]
 
 
Title: Erratum to “Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen” [Microelectron. Eng. 88 (7) (2011) 1457–1460]
Author: Nakasaki, Yasushi
Hirano, Izumi
Kato, Koichi
Mitani, Yuuichiro
Appeared in: Microelectronic engineering
Paging: Volume 88 (2011) nr. 11 pages 1 p.
Year: 2011
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 35 found articles
 
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