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Details for article 115 of 136 found articles
| Title: |
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress |
| Author: |
Lakhdhar, H. Labat, N. Curutchet, A. Defrance, N. Lesecq, M. De Jaeger, J.-C. Malbert, N. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 64 (2016) nr. C pages 5 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 115 of 136 found articles
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