|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 48 found articles
| Title: |
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes |
| Author: |
Kuball, Martin Ťapajna, Milan Simms, Richard J.T. Faqir, Mustapha Mishra, Umesh K. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 51 (2011) nr. 2 pages 6 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 48 found articles
| << previous | next >> |