| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs
|
Alagi, F.
|
|
2011
|
51 |
2 |
p. 321-325
5 p.
|
artikel
|
| 2 |
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition
|
Oukaour, A.
|
|
2011
|
51 |
2 |
p. 386-391
6 p.
|
artikel
|
| 3 |
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
|
Kuball, Martin
|
|
2011
|
51 |
2 |
p. 195-200
6 p.
|
artikel
|
| 4 |
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
|
Douglas, E.A.
|
|
2011
|
51 |
2 |
p. 207-211
5 p.
|
artikel
|
| 5 |
A model for residual life prediction based on Brownian motion with an adaptive drift
|
Wang, Wenbin
|
|
2011
|
51 |
2 |
p. 285-293
9 p.
|
artikel
|
| 6 |
An accurate model for soft error rate estimation considering dynamic voltage and frequency scaling effects
|
Firouzi, Farshad
|
|
2011
|
51 |
2 |
p. 460-467
8 p.
|
artikel
|
| 7 |
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime
|
Raffo, Antonio
|
|
2011
|
51 |
2 |
p. 235-239
5 p.
|
artikel
|
| 8 |
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
|
Ma, Chenyue
|
|
2011
|
51 |
2 |
p. 337-341
5 p.
|
artikel
|
| 9 |
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
|
Mari, D.
|
|
2011
|
51 |
2 |
p. 229-234
6 p.
|
artikel
|
| 10 |
Application of genetic algorithms for electronic devices placement in structures with heat conduction through the substrate
|
Felczak, M.
|
|
2011
|
51 |
2 |
p. 453-459
7 p.
|
artikel
|
| 11 |
Application of Machine Model ESD tester to high volume capacitor reliability testing
|
Meeder, Michael G.
|
|
2011
|
51 |
2 |
p. 246-251
6 p.
|
artikel
|
| 12 |
Automatic data mining for telemetry database of computer systems
|
Wu, C.-H.
|
|
2011
|
51 |
2 |
p. 263-269
7 p.
|
artikel
|
| 13 |
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements
|
Ivo, P.
|
|
2011
|
51 |
2 |
p. 217-223
7 p.
|
artikel
|
| 14 |
Complex system maintainability verification with limited samples
|
Miao, Qiang
|
|
2011
|
51 |
2 |
p. 294-299
6 p.
|
artikel
|
| 15 |
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
|
Cäsar, M.
|
|
2011
|
51 |
2 |
p. 224-228
5 p.
|
artikel
|
| 16 |
Drainage ratio impact on void creation in gold interconnect
|
Littleton, Dave
|
|
2011
|
51 |
2 |
p. 240-245
6 p.
|
artikel
|
| 17 |
Editorial
|
Ersland, Peter
|
|
2011
|
51 |
2 |
p. 187-
1 p.
|
artikel
|
| 18 |
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
|
Arslan, Engin
|
|
2011
|
51 |
2 |
p. 370-375
6 p.
|
artikel
|
| 19 |
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
|
Roy, Tania
|
|
2011
|
51 |
2 |
p. 212-216
5 p.
|
artikel
|
| 20 |
Forecasting electronic part procurement lifetimes to enable the management of DMSMS obsolescence
|
Sandborn, P.
|
|
2011
|
51 |
2 |
p. 392-399
8 p.
|
artikel
|
| 21 |
Health-monitoring method of note PC for cooling performance degradation and load assessment
|
Hirohata, Kenji
|
|
2011
|
51 |
2 |
p. 255-262
8 p.
|
artikel
|
| 22 |
Health monitoring of electronic products based on Mahalanobis distance and Weibull decision metrics
|
Niu, Gang
|
|
2011
|
51 |
2 |
p. 279-284
6 p.
|
artikel
|
| 23 |
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2S X +UV interface treatment
|
Lin, Chao-Wei
|
|
2011
|
51 |
2 |
p. 381-385
5 p.
|
artikel
|
| 24 |
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer
|
Roda Neve, C.
|
|
2011
|
51 |
2 |
p. 326-331
6 p.
|
artikel
|
| 25 |
Improved performance of trench power MOSFET with SiGeC-based channel
|
Wang, Ying
|
|
2011
|
51 |
2 |
p. 376-380
5 p.
|
artikel
|
| 26 |
Improved single-pass approach for reliability analysis of digital combinational circuits
|
Seyyed Mahdavi, S.J.
|
|
2011
|
51 |
2 |
p. 477-484
8 p.
|
artikel
|
| 27 |
Inside front cover - Editorial board
|
|
|
2011
|
51 |
2 |
p. IFC-
1 p.
|
artikel
|
| 28 |
Interfacial microstructure and bonding strength of Sn–3Ag–0.5Cu and Sn–3Ag–0.5Cu–0.5Ce–xZn solder BGA packages with immersion Ag surface finish
|
Lin, Hsiu-Jen
|
|
2011
|
51 |
2 |
p. 445-452
8 p.
|
artikel
|
| 29 |
Investigation of power Trench MOSFETs with retrograde body profile
|
Wang, Ying
|
|
2011
|
51 |
2 |
p. 513-516
4 p.
|
artikel
|
| 30 |
Maintenance strategy optimization using a continuous-state partially observable semi-Markov decision process
|
Zhou, Yifan
|
|
2011
|
51 |
2 |
p. 300-309
10 p.
|
artikel
|
| 31 |
Maximum error modeling for fault-tolerant computation using maximum a posteriori (MAP) hypothesis
|
Lingasubramanian, Karthikeyan
|
|
2011
|
51 |
2 |
p. 485-501
17 p.
|
artikel
|
| 32 |
Micromechanical analysis of copper trace in printed circuit boards
|
Hu, Guojun
|
|
2011
|
51 |
2 |
p. 416-424
9 p.
|
artikel
|
| 33 |
Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling
|
Agyakwa, P.A.
|
|
2011
|
51 |
2 |
p. 406-415
10 p.
|
artikel
|
| 34 |
Operability diagram of drop formation and its response to temperature variation in a piezoelectric inkjet nozzle
|
Shin, Pyungho
|
|
2011
|
51 |
2 |
p. 437-444
8 p.
|
artikel
|
| 35 |
Rapid design space exploration by hybrid fuzzy search approach for optimal architecture determination of multi objective computing systems
|
Sengupta, Anirban
|
|
2011
|
51 |
2 |
p. 502-512
11 p.
|
artikel
|
| 36 |
Reducing arbitrary choices in model building for prognostics: An approach by applying parsimony principle on an evolving neuro-fuzzy system
|
El-Koujok, Mohamed
|
|
2011
|
51 |
2 |
p. 310-320
11 p.
|
artikel
|
| 37 |
Reliability evaluation of logic circuits using probabilistic gate models
|
Han, Jie
|
|
2011
|
51 |
2 |
p. 468-476
9 p.
|
artikel
|
| 38 |
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
|
Joh, Jungwoo
|
|
2011
|
51 |
2 |
p. 201-206
6 p.
|
artikel
|
| 39 |
Solder interconnection failure time estimation based on the embedded precursor behaviour modelling
|
Voutilainen, Juha-Veikko
|
|
2011
|
51 |
2 |
p. 425-436
12 p.
|
artikel
|
| 40 |
Special Issue on Prognostics and Health Management
|
Lau, Daniel
|
|
2011
|
51 |
2 |
p. 253-254
2 p.
|
artikel
|
| 41 |
Structural health monitoring based on continuous ACO method
|
Yu, Ling
|
|
2011
|
51 |
2 |
p. 270-278
9 p.
|
artikel
|
| 42 |
Study of current saturation behaviors in dual direction SCR for ESD applications
|
Han, Yan
|
|
2011
|
51 |
2 |
p. 332-336
5 p.
|
artikel
|
| 43 |
The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
|
Dökme, İlbilge
|
|
2011
|
51 |
2 |
p. 360-364
5 p.
|
artikel
|
| 44 |
The ROCS Workshop and 25years of compound semiconductor reliability
|
Roesch, William J.
|
|
2011
|
51 |
2 |
p. 188-194
7 p.
|
artikel
|
| 45 |
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
|
Juang, Miin-Horng
|
|
2011
|
51 |
2 |
p. 365-369
5 p.
|
artikel
|
| 46 |
8T vs. 6T SRAM cell radiation robustness: A comparative analysis
|
Alorda, Bartomeu
|
|
2011
|
51 |
2 |
p. 350-359
10 p.
|
artikel
|
| 47 |
Using EWMA control schemes for monitoring wafer quality in negative binomial process
|
Yu, Fong-Jung
|
|
2011
|
51 |
2 |
p. 400-405
6 p.
|
artikel
|
| 48 |
Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
|
Álvarez-Botero, Germán
|
|
2011
|
51 |
2 |
p. 342-349
8 p.
|
artikel
|
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