| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
|
Manyakhin, F.
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3 |
1 |
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artikel
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| 2 |
AMMONO method of BN, AlN and GaN synthesis and crystal growth
|
Dwili~ski, R.
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3 |
1 |
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artikel
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| 3 |
Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED’s
|
Calle, F.
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3 |
1 |
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artikel
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| 4 |
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
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Marchand, H.
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3 |
1 |
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artikel
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| 5 |
300°C GaN/AlGaN Heterojunction Bipolar Transistor
|
Ren, Fan
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3 |
1 |
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artikel
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| 6 |
Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
|
Sánchez-García, M. A.
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3 |
1 |
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artikel
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| 7 |
Current status of GaN crystal growth by sublimation sandwich technique
|
Baranov, P. G.
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3 |
1 |
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artikel
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| 8 |
Direct SIMS Determination of the InxGa1−xN Mole Fraction
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Kovarsky, A. P.
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3 |
1 |
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artikel
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| 9 |
Effect of internal absorption on cathodoluminescence from GaN
|
Knobloch, Klaus
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3 |
1 |
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artikel
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| 10 |
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
|
Haffouz, S.
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3 |
1 |
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artikel
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| 11 |
Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
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Domen, Kay
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3 |
1 |
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artikel
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| 12 |
Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
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Krishnankutty, Subash
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3 |
1 |
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artikel
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| 13 |
GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
|
Kung, P.
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3 |
1 |
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artikel
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| 14 |
GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary ®Reactors
|
Schoen, O.
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3 |
1 |
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artikel
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| 15 |
GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
|
Prywer, Jolanta
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3 |
1 |
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artikel
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| 16 |
Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
|
Buzynin, A. N.
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3 |
1 |
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artikel
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| 17 |
Heterostructure for UV LEDs Based on Thick AlGaN Layers
|
Sakharov, A. V.
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3 |
1 |
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artikel
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| 18 |
High quality GaN films - growth and properties
|
Pakua, K.
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3 |
1 |
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artikel
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| 19 |
Localized Epitaxy of GaN by HVPE on patterned Substrates
|
Parillaud, O.
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3 |
1 |
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artikel
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| 20 |
Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
|
Pakua, K.
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3 |
1 |
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artikel
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| 21 |
Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
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Sánchez, F. J.
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3 |
1 |
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artikel
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| 22 |
Macro- and microstrains in MOCVD-grown GaN
|
Usikov, A.
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3 |
1 |
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artikel
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| 23 |
Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
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Witowski, A. M.
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3 |
1 |
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artikel
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| 24 |
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
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Beaumont, B.
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3 |
1 |
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artikel
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| 25 |
Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
|
Godlewski, M.
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3 |
1 |
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artikel
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| 26 |
Native defects and carbon impurity in cubic BN
|
Gorczyca, I.
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3 |
1 |
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artikel
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| 27 |
New plasma chemistries for etching GaN and InN: BI3 and BBr3
|
Cho, Hyun
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3 |
1 |
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artikel
|
| 28 |
Nucleation of AlN on the (7 × 7) Reconstructed Silicon (1 1 1) Surface
|
Hellman, E. S.
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3 |
1 |
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artikel
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| 29 |
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
|
Wetzel, Christian
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3 |
1 |
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artikel
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| 30 |
Optical properties of electron-irradiated GaN
|
Buyanova, I. A.
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3 |
1 |
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artikel
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| 31 |
Optical Properties of GaNAs Grown by MBE
|
Pozina, G.
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3 |
1 |
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artikel
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| 32 |
Paramagnetic defects in GaN
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Palczewska, M.
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3 |
1 |
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artikel
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| 33 |
Phase Separation in wurtzite In1−x−yGaxAlyN
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Matsuoka, T.
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3 |
1 |
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artikel
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| 34 |
Pinholes, Dislocations and Strain Relaxation in InGaN
|
Jahnen, B.
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3 |
1 |
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artikel
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| 35 |
Polarization and band offsets of stacking faults in AlN and GaN
|
Majewski, J. A.
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3 |
1 |
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artikel
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| 36 |
Properties of GaN epilayers grown on misoriented sapphire substrates
|
Trager-Cowan, Carol
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3 |
1 |
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artikel
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| 37 |
Raman study of resonance effects in Ga1-xAlxN solid solutions
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Demangeot, F.
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3 |
1 |
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artikel
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| 38 |
Schottky Diodes on MOCVD Grown AlGaN Films
|
Polyakov, A. Y.
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3 |
1 |
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artikel
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| 39 |
Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
|
Singh, Raj
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3 |
1 |
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artikel
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| 40 |
Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
|
Zauner, A. R. A.
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3 |
1 |
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artikel
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| 41 |
Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
|
Kozlowski, J.
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3 |
1 |
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artikel
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| 42 |
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
|
Yu, Zhonghai
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3 |
1 |
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artikel
|
| 43 |
Suppression of phase separation in InGaN due to elastic strain
|
Karpov, S. Yu.
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3 |
1 |
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artikel
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| 44 |
Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
|
Zsebök, O.
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3 |
1 |
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artikel
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| 45 |
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
|
Smith, A. R.
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3 |
1 |
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artikel
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| 46 |
Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
|
Zywietz, T.
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3 |
1 |
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artikel
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| 47 |
The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
|
Yunovich, A. E.
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3 |
1 |
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artikel
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| 48 |
The Polarity of GaN: a Critical Review
|
Hellman, E. S.
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3 |
1 |
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artikel
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| 49 |
Thermodynamic properties of group-III nitrides and related species
|
Przhevalskii, I. N.
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3 |
1 |
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artikel
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| 50 |
The role of piezoelectric fields in GaN-based quantum wells
|
Hangleiter, Andreas
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3 |
1 |
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artikel
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| 51 |
Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
|
Makowiak, Pawe
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3 |
1 |
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artikel
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| 52 |
Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
|
Kim, E.
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3 |
1 |
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artikel
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| 53 |
Ultraviolet Photodetectors Based on AlxGa1−xN Schottky Barriers
|
Monroy, E.
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3 |
1 |
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artikel
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| 54 |
X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
|
Langer, R.
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3 |
1 |
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artikel
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