| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Atomic Force High Frequency Phonons Non-volatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology
|
Pan, James N.
|
|
|
4 |
48 |
p. 2577-2584
|
artikel
|
| 2 |
Atomistic Modeling of an MFM ferroelectric capacitor made of HfO2:Si
|
Blaise, P.
|
|
|
4 |
48 |
p. 2619-2625
|
artikel
|
| 3 |
Contact Resistance Improvement for Advanced Logic by Integration of Epi, Implant and Anneal Innovations
|
Khaja, Fareen Adeni
|
|
|
4 |
48 |
p. 2559-2576
|
artikel
|
| 4 |
Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs
|
Pan, James N.
|
|
|
4 |
48 |
p. 2585-2591
|
artikel
|
| 5 |
Performance Degradation Due to Nonlocal Heating Effects in Resistive ReRAM Memory Arrays
|
Al-Mamun, M.
|
|
|
4 |
48 |
p. 2593-2600
|
artikel
|
| 6 |
STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors
|
Thompson, Jesse E.
|
|
|
4 |
48 |
p. 2609-2617
|
artikel
|
| 7 |
Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells
|
Miyatani, Toshiki
|
|
|
4 |
48 |
p. 2601-2607
|
artikel
|
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