| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorptive removal of V(V) ions using clinoptilolite modified with polypyrrole and iron oxide nanoparticles in column studies
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Mthombeni, Nomcebo H.
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36 |
p. 2119-2127
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artikel
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| 2 |
Advanced process control method for inline isolation implant monitoring in III–V GaAs semiconductor fabrication
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Kurkcuoglu, Sasha
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36 |
p. 1353-1357
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artikel
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| 3 |
Ag-Nylon Nanocomposites by Dynamic Emulsion Polycondensation
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Zhang, Linqi
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36 |
p. 2519-2524
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artikel
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| 4 |
A Model of Interfacial Permeability for Soft Seals in Marine-Organism, Suction-Based Adhesion
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Beckert, Michael
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36 |
p. 2531-2543
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artikel
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| 5 |
Analysis of dopant distribution profiles of very high energy implants
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Kondratenko, Serguei
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36 |
p. 1472-1475
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artikel
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| 6 |
A newly developed ECR ion source with wide dynamic range of beam current
|
Itoi, Suguru
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36 |
p. 1504-1508
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artikel
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| 7 |
Angle control requirements and solutions for enabling high aspect ratio structures
|
DeLuca, James
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36 |
p. 1279-1284
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artikel
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| 8 |
Angle-directed ion beams for localized deposition on high aspect ratio structures
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Seidel, Thomas E.
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36 |
p. 1445-1449
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artikel
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| 9 |
A snapshot review on flash lamp annealing of semiconductor materials
|
Rebohle, Lars
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36 |
p. 1301-1309
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artikel
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| 10 |
A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond
|
Yu, Hao
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36 |
p. 1369-1379
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artikel
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| 11 |
A study of beam divergence effects on medium-dose channeling implants
|
Huh, Tae-Hoon
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36 |
p. 1438-1440
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artikel
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| 12 |
AuCu, AgCu and AuAg Bimetallic Nanoparticles: Synthesis, Characterization and Water Remediation
|
Tanori, Judith
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36 |
p. 2525-2530
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artikel
|
| 13 |
Bacterial Cellulose Produced by Gluconacetobacter xylinus Culture Using Complex Carbon Sources for Biomedical Applications
|
Garcia-Sanchez, Mayra Elizabeth
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36 |
p. 2563-2567
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artikel
|
| 14 |
Beam shape control system by machine learning on the NISSIN BeyEX medium current ion implanter
|
Takemura, Shinya
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36 |
p. 1463-1467
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artikel
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| 15 |
Chemical Vapor Transport Deposition of Stable Cubic CsPbI3 Optical Films on the Porous Alumina Substrate
|
Zhao, Cong
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36 |
p. 1973-1979
|
artikel
|
| 16 |
Comparative evaluation of indirectly heated cathode DC ion source and inductively coupled plasma RF ion source for high current ion implanter
|
Hwang, Jongjin
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36 |
p. 1338-1342
|
artikel
|
| 17 |
Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealing
|
Sturm-Rogon, Leonhard
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36 |
p. 1260-1264
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artikel
|
| 18 |
Conversion of Agricultural Waste Streams into Value Added Products
|
Adu, Kofi W.
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36 |
p. 2137-2142
|
artikel
|
| 19 |
Cryogenic implantation to boost PFET performance and reduce variability in 3D NAND flows
|
Liao, Jeng-Hwa
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36 |
p. 1534-1539
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artikel
|
| 20 |
Defects and dopant behavior of a medium-dose range implant into heated silicon wafers
|
Huh, Tae-Hoon
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36 |
p. 1364-1368
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artikel
|
| 21 |
Design and Fabrication of Polymer Layered Silicate Nanocomposites for Water Purification
|
Mbui, Damaris W.
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36 |
p. 2099-2107
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artikel
|
| 22 |
Detection of particles in the ion beam
|
Matsushita, Hiroshi
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36 |
p. 1509-1514
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artikel
|
| 23 |
Development of ultra-high-current implanter for material modification process in next era devices
|
Kai, Hiroaki
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36 |
p. 1248-1252
|
artikel
|
| 24 |
Dopant gas purity and adsorbent stability
|
Arnó, Josep
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36 |
p. 1426-1430
|
artikel
|
| 25 |
3D printing of gels with living photosynthetic algae
|
Calvert, Paul
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36 |
p. 2569-2572
|
artikel
|
| 26 |
Effects of Electrode Materials on Charge Conduction Mechanisms of Memory Device Based on Natural Aloe Vera
|
Lim, Zhe Xi
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36 |
p. 2513-2518
|
artikel
|
| 27 |
Enhancement of Al+ beam current in GSD III-180
|
Murooka, Hiroki
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36 |
p. 1435-1437
|
artikel
|
| 28 |
Enhancing the photocatalytic degradation of selected chlorophenols using Ag/zno nanocomposites
|
Kotlhao, Kate
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36 |
p. 2129-2136
|
artikel
|
| 29 |
Fabrication of metal oxide - biopolymer nanocomposite for water defluoridation
|
Mobegi, Erick
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36 |
p. 2109-2118
|
artikel
|
| 30 |
First-principles Study on Water Dissociation in Grain Boundary of MAPbI3 Perovskite
|
Asad, M. A. A.
|
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36 |
p. 1965-1971
|
artikel
|
| 31 |
GaTlAs Quantum Well Solar Cells for Sub-band Gap Absorption
|
Zayan, Ahmed
|
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36 |
p. 2015-2021
|
artikel
|
| 32 |
Germanium ion implantation performance improvement on applied materials’ VIISta HCS high current implanter with use of germanium tetrafluoride (GeF4) and hydrogen (H2) mixture gases
|
Tang, Ying
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36 |
p. 1401-1403
|
artikel
|
| 33 |
High-temperature electrostatic chuck enabled by BN dielectrics
|
Fan, Wei
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36 |
p. 1257-1259
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artikel
|
| 34 |
IMPHEAT-II, a novel high temperature ion implanter for mass production of SiC power devices
|
Kuwata, Yusuke
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36 |
p. 1486-1489
|
artikel
|
| 35 |
Improving safety in dopant gas delivery systems
|
Arnó, Josep
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36 |
p. 1421-1425
|
artikel
|
| 36 |
Individual dopant profiles in high energy multiple implantation under channeling conditions
|
Kawasaki, Yoji
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36 |
p. 1459-1462
|
artikel
|
| 37 |
Introducing the Purion H200™ single wafer high current implanter
|
Gupta, A.
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36 |
p. 1295-1300
|
artikel
|
| 38 |
Introduction: Ion implantation technology special issue
|
Larson, Larry
|
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36 |
p. 1231-1233
|
artikel
|
| 39 |
Investigation of source materials, co-gases, and methods for aluminum ion implantation
|
Tang, Ying
|
|
|
|
36 |
p. 1404-1406
|
artikel
|
| 40 |
Investigation of various source materials and co-gases for fluorine ion implantation performance improvement
|
Tang, Ying
|
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36 |
p. 1407-1409
|
artikel
|
| 41 |
Ion erosion and elemental purity of deposited Si films on Al
|
Wriggins, Walt
|
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36 |
p. 1441-1444
|
artikel
|
| 42 |
Ion erosion and particle release in fine graphite
|
Current, Michael I.
|
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36 |
p. 1450-1453
|
artikel
|
| 43 |
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
|
Torregrosa, F.
|
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36 |
p. 1347-1352
|
artikel
|
| 44 |
Ion implanter beam optics design using global optimization techniques
|
Vanderberg, Bo
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36 |
p. 1482-1485
|
artikel
|
| 45 |
Lateral mapping of damage patterns in plasma immersion ion-implanted silicon
|
Kéri, O.
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36 |
p. 1321-1325
|
artikel
|
| 46 |
LINAC simulation with dataset generator
|
Platow, Wilhelm
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36 |
p. 1515-1519
|
artikel
|
| 47 |
Low-temperature monitoring with implantation and alloying
|
Ende, L.
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36 |
p. 1525-1529
|
artikel
|
| 48 |
Magnetic Ordering of Perovskite-Like La-, Nd-, and Gd-Doped Bismuth Ferrite
|
Sobol, Valery
|
|
|
|
36 |
p. 1989-1999
|
artikel
|
| 49 |
Measuring activation depth profiles in very highly doped ultra-thin semiconductors at sub-nm depth resolution
|
Joshi, Abhijeet
|
|
|
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36 |
p. 1326-1330
|
artikel
|
| 50 |
Mechanics of Interfacial Bonding in Dissimilar Soft Transient Materials and Electronics
|
Jamshidi, Reihaneh
|
|
|
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36 |
p. 2501-2511
|
artikel
|
| 51 |
Micro-cellulose sponge from waste cotton as controlled-release Polyphenol carriers
|
Satirapipathkul, Chutimon
|
|
|
|
36 |
p. 2545-2550
|
artikel
|
| 52 |
Nanocellulose Extracted from Defoliation of Ginkgo Leaves
|
Ma, Hongyang
|
|
|
|
36 |
p. 2077-2088
|
artikel
|
| 53 |
Neutron radiation due to high energy boron ion beams
|
Platow, Wilhelm
|
|
|
|
36 |
p. 1476-1481
|
artikel
|
| 54 |
New control system of the multiple filaments in the large ion source for ion doping system iG6 Ver.2
|
Hirai, Yuya
|
|
|
|
36 |
p. 1495-1498
|
artikel
|
| 55 |
New ECR source ion implanter with advanced wafer temperature control for material modification
|
Cherekdjian, Sarko
|
|
|
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36 |
p. 1289-1294
|
artikel
|
| 56 |
Nitride stress inversion using plasma immersion ion implantation processes
|
Lachal, L.
|
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36 |
p. 1390-1394
|
artikel
|
| 57 |
On continuum simulations of the evolution of faulted and perfect dislocation loops in silicon during post-implantation annealing
|
Johnsson, Anna
|
|
|
|
36 |
p. 1315-1320
|
artikel
|
| 58 |
Optimization of doped lanthanated tungsten components in ion sources by determining the temperature profile for halogen processes
|
Schaper, Florian
|
|
|
|
36 |
p. 1530-1533
|
artikel
|
| 59 |
Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealing
|
Alvarez Alonso, Angela
|
|
|
|
36 |
p. 1310-1314
|
artikel
|
| 60 |
Parasitic side channel formation due to ion implantation isolation of GaN HEMT
|
Yu, Hao
|
|
|
|
36 |
p. 1274-1278
|
artikel
|
| 61 |
Particle counts and size distributions after implantation with on-wafer graphite sources
|
Current, Michael I.
|
|
|
|
36 |
p. 1253-1256
|
artikel
|
| 62 |
Performance and reliability of the fourth generation of Safe Delivery Source® (SDS®4) in the ion implantation application
|
Guan, Weihang
|
|
|
|
36 |
p. 1410-1417
|
artikel
|
| 63 |
Performance improvement on SMIT SHX-III high current ion implanter through the use of EnrichedPlus 72germanium tetrafluoride (EnPlus 72GeF4) and hydrogen (H2) mixture gases
|
Tang, Ying
|
|
|
|
36 |
p. 1398-1400
|
artikel
|
| 64 |
Precise angle control for channeling using SS-UHE, a single-wafer ultrahigh-energy ion implanter
|
Kariya, Hiroyuki
|
|
|
|
36 |
p. 1285-1288
|
artikel
|
| 65 |
Preparation and Characterization of Biogenic Chitosan-Hydroxyapatite Composite: Application in Defluoridation
|
Wagutu, Agatha W.
|
|
|
|
36 |
p. 2089-2098
|
artikel
|
| 66 |
Profiles and defects in highly channeled and random beam orientation MeV dopant implants in Si(100)
|
Current, Michael I.
|
|
|
|
36 |
p. 1454-1458
|
artikel
|
| 67 |
Purion XEmax, Axcelis ultra-high energy implanter with Boost™ technology
|
Satoh, Shu
|
|
|
|
36 |
p. 1490-1494
|
artikel
|
| 68 |
Rapid sampling during synthesis of lead halide perovskite nanocrystals for spectroscopic measurement
|
Sadighian, James C.
|
|
|
|
36 |
p. 1957-1964
|
artikel
|
| 69 |
Results and Adoption of Safe Delivery Source® (SDS®4) on VIISta® HCP
|
Chambers, Barry
|
|
|
|
36 |
p. 1418-1420
|
artikel
|
| 70 |
Risk of neutron generation with implantation of light ions
|
Turcaud, J. A.
|
|
|
|
36 |
p. 1343-1346
|
artikel
|
| 71 |
Role of Pb2+ Adsorbents on the Opto-Electronic Properties of a CsPbBr3 Nanocrystal: A DFT Study
|
Forde, Aaron
|
|
|
|
36 |
p. 1981-1988
|
artikel
|
| 72 |
Sheet resistance measurement for ultra-high energy ion implantation
|
Sasaki, Haruka
|
|
|
|
36 |
p. 1520-1524
|
artikel
|
| 73 |
Side-chain effect on the photovoltaic performance of conjugated polymers based on benzodifuran and benzodithiophene-4,8-dione
|
He, Enfang
|
|
|
|
36 |
p. 2001-2007
|
artikel
|
| 74 |
Single implant damage accumulation and interactions between multiple implants
|
DeLuca, J.
|
|
|
|
36 |
p. 1358-1363
|
artikel
|
| 75 |
Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis
|
Borland, John
|
|
|
|
36 |
p. 1380-1389
|
artikel
|
| 76 |
Structure and Properties in Synthetic MSUM and the Corresponding Biomaterial
|
Brune, Alicia B.
|
|
|
|
36 |
p. 2551-2556
|
artikel
|
| 77 |
Synthesis and Characterization of Hydrotalcite like Compound via a Facile Solid State Method
|
Fahami, Abbas
|
|
|
|
36 |
p. 2557-2562
|
artikel
|
| 78 |
Temperature effect in high-dose, medium-energy implantation with single-wafer-type implanter
|
Sakaguchi, Takuya
|
|
|
|
36 |
p. 1431-1434
|
artikel
|
| 79 |
The diffusion analysis of implanted heavy metals in 4H-SiC
|
Wada, Ryota
|
|
|
|
36 |
p. 1331-1337
|
artikel
|
| 80 |
The examination of source life and beam parameters of germanium implantation using hydrogen carrier gas
|
Chan, Weng Siong
|
|
|
|
36 |
p. 1265-1269
|
artikel
|
| 81 |
The performance of the fourth generation of safe delivery source® (SDS®4) package on AIBT iPulsar high current implanter
|
Tang, Ying
|
|
|
|
36 |
p. 1395-1397
|
artikel
|
| 82 |
Thermal budget reduction for spike anneals in conventional RTP
|
Hamm, S.
|
|
|
|
36 |
p. 1270-1273
|
artikel
|
| 83 |
The scaled FinFET well formation using heated implantation
|
Guo, B. N.
|
|
|
|
36 |
p. 1468-1471
|
artikel
|
| 84 |
Time-resolved Optical Properties of SiNW Oriented in <211> Crystallographic Direction
|
Fatima,
|
|
|
|
36 |
p. 2009-2014
|
artikel
|
| 85 |
Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication
|
Torregrosa, F.
|
|
|
|
36 |
p. 1499-1503
|
artikel
|
| 86 |
Where is the annealing technology going for better device performance?
|
Suguro, Kyoichi
|
|
|
|
36 |
p. 1241-1247
|
artikel
|
| 87 |
35 Years of challenge and innovation in ion implant
|
Renau, Anthony
|
|
|
|
36 |
p. 1234-1240
|
artikel
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