| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternating Current Conduction and Impedance Spectroscopy Analysis on Pulsed Excimer Laser Ablated (Pb, La)TiO 3 Thin Films
|
Venkateswarlu, P.
|
|
2002
|
46 |
1 |
p. 143-152
|
artikel
|
| 2 |
Characterization of Rhombohedral (111) and (100) Lead Zirconate Titanate Films Fabricated by RF Magnetron Sputtering
|
Fujii, Tadashi
|
|
2002
|
46 |
1 |
p. 259-264
|
artikel
|
| 3 |
Conference Committees and Sponsors
|
|
|
2002
|
46 |
1 |
p. 13
|
artikel
|
| 4 |
Crystallization of Zirconium-Rich PLZT Thin Films Below 500°C
|
Mandeljc, Mira
|
|
2002
|
46 |
1 |
p. 329-338
|
artikel
|
| 5 |
Development of Materials Integration Strategies for Electroceramic Film-Based Devices Via Complementary In Situ and Ex Situ Studies of Film Growth and Interface Processes
|
Auciello, O.
|
|
2002
|
46 |
1 |
p. 295-306
|
artikel
|
| 6 |
Effects of PbTiO 3 Seed Layer on the Characteristics of RF-Sputtered Pb(Zr 0.5 ,Ti 0.5 )O 3 Thin Films
|
Thomas, Reji
|
|
2002
|
46 |
1 |
p. 95-104
|
artikel
|
| 7 |
Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition
|
Lee, Won-Jae
|
|
2002
|
46 |
1 |
p. 275-284
|
artikel
|
| 8 |
Electrical Properties of PbSrTiO 3 Films on Stainless Steel Substrates with LaSrMnO 3 Buffer layers
|
Pan, Han-Chang
|
|
2002
|
46 |
1 |
p. 175-184
|
artikel
|
| 9 |
Electrode Size Effect on Switching Time of SrBi 2 Ta 2 O 9 Thin Films
|
Chen, Xiaobing
|
|
2002
|
46 |
1 |
p. 215-220
|
artikel
|
| 10 |
Fabrication of (100) Orientated PZT Thin Films for MEMS Applications
|
Zhao, Hong-Jin
|
|
2002
|
46 |
1 |
p. 79-86
|
artikel
|
| 11 |
Fabrication of Pb(Zr,Ti)O 3 Thin Films by Liquid Delivery MOCVD Using a Cocktail Source with Pb(METHD) 2 , Zr(METHD) 4 and Ti(MPD)(METHD) 2
|
Otani, Yohei
|
|
2002
|
46 |
1 |
p. 115-124
|
artikel
|
| 12 |
Ferroelectric Characteristics of Bi 4-x La x Ti 3 O 12 Thin Films Crystallized at Low Temperetures
|
Tanaka, K.
|
|
2002
|
46 |
1 |
p. 285-294
|
artikel
|
| 13 |
Ferroelectric Domain Structures in Epitaxial PZT Thin Films: A Review
|
Lee, Kilho
|
|
2002
|
46 |
1 |
p. 307-328
|
artikel
|
| 14 |
Ferroelectricity of Rare Earth Eu Doped Sol-Gel Derived Pb(Zr x Ti 1-x )O 3 Thin Films
|
Yu, Y. J.
|
|
2002
|
46 |
1 |
p. 37-45
|
artikel
|
| 15 |
Growth Stages of Sol-Gel Derived PZT(30/70) on Pt/Ti/SiO 2 as Shown by SPM (PFM and Topography)
|
Dunn, S.
|
|
2002
|
46 |
1 |
p. 87-94
|
artikel
|
| 16 |
Guest Editorial
|
Miyasaka, Yoichi
|
|
2002
|
46 |
1 |
p. 11
|
artikel
|
| 17 |
High Frequency LIMM - A Powerful Tool for Ferroelectric Thin Film Characterization
|
Sandner, T.
|
|
2002
|
46 |
1 |
p. 243-257
|
artikel
|
| 18 |
High Quality Ferroelectric Capacitor for FeRAM Applications
|
Ren, Tian-Ling
|
|
2002
|
46 |
1 |
p. 47-53
|
artikel
|
| 19 |
Influence of Reactor Pressure on the Formation of PZT Thin Films by Liquid Delivery MOCVD
|
Ueda, Yoshiki
|
|
2002
|
46 |
1 |
p. 125-131
|
artikel
|
| 20 |
Leakage Current Measurements of STO and BST Thin Films Interpreted by the "Dead" Layer Model
|
Schmitz, Sam
|
|
2002
|
46 |
1 |
p. 233-242
|
artikel
|
| 21 |
Low-Leakage Epitaxial PZT Thin Films Grown on Ir/MgO Substrates by Metalorganic Chemical Vapor Deposition
|
Oikawa, T.
|
|
2002
|
46 |
1 |
p. 55-64
|
artikel
|
| 22 |
Low-Temperature Preparation of PbZrTiO 3 /TiNi/Si Heterostructures by Laser Annealing
|
Pan, Han-Chang
|
|
2002
|
46 |
1 |
p. 163-173
|
artikel
|
| 23 |
Microstructural and Electrical Properties of (Ba x Sr 1 - x )Ti 1 + y O 3 + z Thin Films Prepared by RF Magnetron Sputtering
|
Baniecki, J. D.
|
|
2002
|
46 |
1 |
p. 221-232
|
artikel
|
| 24 |
Microstructure and Electrical Properties of PZT Thin films Deposited by Laser Ablation on Template Layer
|
Wang, Zhan Jie
|
|
2002
|
46 |
1 |
p. 187-195
|
artikel
|
| 25 |
Multi-Layer Ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Prepared by Pulsed Laser Deposition
|
Cheng, Hsiu-Fung
|
|
2002
|
46 |
1 |
p. 17-26
|
artikel
|
| 26 |
Physical Properties of (Pb,La)(Zr,Ti)O 3 Films Crystallized by One-Step Postdeposition Annealing Using Nucleus-Insertion Method
|
Wakabayashi, Ryo
|
|
2002
|
46 |
1 |
p. 27-35
|
artikel
|
| 27 |
Preface
|
Shiosaki, Tadashi
|
|
2002
|
46 |
1 |
p. 9-10
|
artikel
|
| 28 |
Preparation of PLZT Ferroelectric Films by RF Sputtering on 200 mmφ Substrate
|
Kikuchi, S.
|
|
2002
|
46 |
1 |
p. 105-114
|
artikel
|
| 29 |
Preparation of SrBi 2 Ta 2 O 9 Ferroelectric Thin Films by RF Magnetron Sputtering
|
Nishioka, Yutaka
|
|
2002
|
46 |
1 |
p. 265-274
|
artikel
|
| 30 |
Study of Relaxor Behavior of 0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 Thin Films
|
Laha, Apurba
|
|
2002
|
46 |
1 |
p. 153-162
|
artikel
|
| 31 |
Study of Thickness Dependence on Electrical Properties of (Pb,La)TiO 3 Thin Films for Memory Applications
|
Venkateswarlu, P.
|
|
2002
|
46 |
1 |
p. 133-141
|
artikel
|
| 32 |
The Properties of Multi-Layered Pt/(Ba 0.5 Sr 0.5 )TiO 3 /Pb(Zr 0.52 Ti 0.48 )O 3 /(Ba 0.5 Sr 0.5 )TiO 3 /Pt Capacitors
|
Yan, Feng
|
|
2002
|
46 |
1 |
p. 197-204
|
artikel
|
| 33 |
The Role of Bi 2 O 3 Interfacial Layer in Improvement of Ferroelectric Properties of SrBi 2 Ta 2 O 9 Thin Films Deposited by Liquid-Delivery MOCVD
|
Seong, Nak-Jin
|
|
2002
|
46 |
1 |
p. 205-214
|
artikel
|
| 34 |
Thick Pb(Ni 1/3 Nb 2/3 )O 3 -(Pb 1-x )(Ti 1-y Zr y )O 3 Films Prepared by Tape-Casting
|
Hsieh, Kun-Che
|
|
2002
|
46 |
1 |
p. 3-15
|
artikel
|
| 35 |
Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate
|
Masuda, Takeshi
|
|
2002
|
46 |
1 |
p. 65-77
|
artikel
|
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