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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AC and DC conductivity studies in pulsed laser ablated (Ba, Sr)TiO3 thin films Saha, S.
 2001
 33 1-4 p. 353-361
 artikel
2 An improvement of retention property by using surface treatment in SOL-GEL derived PZT films Kim, H. H.
 2001
 33 1-4 p. 9-18
 artikel
3 Characterization of SrBi2Ta2O9 films prepared by metalorganic decomposition using rapid thermal annealing Ling, Huiqin
 2001
 33 1-4 p. 253-259
 artikel
4 DC field induced antiferroelectric phase transition in bulk, single crystal strontium titanate Gevorgian, S.
 2001
 33 1-4 p. 323-329
 artikel
5 Deposition of high dielectric (Ba, Sr)TiO3 thin films by rf magnetron co-sputtering Jaing, Cheng-Chung
 2001
 33 1-4 p. 343-352
 artikel
6 Development of micromechanical and optical devices incorporating deposited PZT films Wright, Robert V.
 2001
 33 1-4 p. 209-220
 artikel
7 Dielectric nonlinearity of the PBB'B''O3 ferroelectric solid solutions Dambekalne, Maruta
 2001
 33 1-4 p. 101-108
 artikel
8 Dielectric response and complex impedance spectroscopy studies in pulsed laser ablated (Ba, Sr)TiO3 thin films Saha, S.
 2001
 33 1-4 p. 331-342
 artikel
9 Driving applications for ferroelectric NVMS Zambrano, Raffaele
 2001
 33 1-4 p. 1-8
 artikel
10 Effect of NO(Si3N4/SiO2) layers on the electrical properties of mfisfet using SBT (SrBi2Ta2O9) materials You, In-Kyu
 2001
 33 1-4 p. 177-184
 artikel
11 Effects of interface state on electrcal properties of SBT thin films Choi, Gwang-Pyo
 2001
 33 1-4 p. 165-176
 artikel
12 Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process Kil, Deok-sin
 2001
 33 1-4 p. 291-301
 artikel
13 Electrical properties of Pb1-xLax(ZryTi1-y)1-x/4O3 thin films with various iridium-based top electrodes Yoon, Soon-Gil
 2001
 33 1-4 p. 155-164
 artikel
14 Fabrication of PZT films on SI substrates by SOL-GEL method using Y2O3 buffer layers Park, Byung-Eun
 2001
 33 1-4 p. 109-116
 artikel
15 Ferroelectric properties of epitaxial barium titanate thin film capacitors on silicon substrate Abe, Kazuhide
 2001
 33 1-4 p. 281-290
 artikel
16 Ferroelectric properties of SOL-GEL derived thin solid film of barium titanate on ITO-glass Han, X. Q.
 2001
 33 1-4 p. 221-226
 artikel
17 Fully MOCVD obtained epitaxial ferroelectric capacitors Novojilov, Mikhail A.
 2001
 33 1-4 p. 79-89
 artikel
18 Guest editorial Waser, Rainer
 2001
 33 1-4 p. 9-10
 artikel
19 High temperature conductivity behavior of doped SrTiO3 thin films Ohly, Christian
 2001
 33 1-4 p. 363-372
 artikel
20 Improvement of process stability for PZT thin films formation by using modified SOL-GEL solutions Soyama, Nobuyuki
 2001
 33 1-4 p. 227-234
 artikel
21 Kinetics of fatigue effect Shur, V. Ya.
 2001
 33 1-4 p. 117-132
 artikel
22 Microstructure and electrical properties of epitaxial SrBi2Nb2O9 And SrBi2Ta2O9 films Zurbuchen, Mark A.
 2001
 33 1-4 p. 27-37
 artikel
23 Net spontaneous polarisation in as-grown SBT films Jimenez, R.
 2001
 33 1-4 p. 49-57
 artikel
24 Optical properties of potassium lithium niobate films Zhang, H. X.
 2001
 33 1-4 p. 71-78
 artikel
25 Physical insights on imprint and application to functional memory with ferroelectric materials Fujii, Y.
 2001
 33 1-4 p. 261-270
 artikel
26 Polarization switching of SrBi2Ta2O9 thin films prepared by MOD method Chen, Xiaobing
 2001
 33 1-4 p. 145-153
 artikel
27 Preparation of antiferroelectric PZT thin films on bare and on RuO2 coated steel substrates Seveno, R.
 2001
 33 1-4 p. 185-197
 artikel
28 Relationship between PB content, crystallographic texture and ferroelectric properties of plzt thin films for FRAM® applications Chu, Fan
 2001
 33 1-4 p. 19-26
 artikel
29 Relaxation effects and steady-state conduction in non-stoichiometric SBT films Bachhofer, Harald
 2001
 33 1-4 p. 245-252
 artikel
30 Relaxation mechanisms in ferroelectric thin film capacitors for feram application Lohse, O.
 2001
 33 1-4 p. 39-48
 artikel
31 Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD Saito, Keisuke
 2001
 33 1-4 p. 59-69
 artikel
32 Retention behavior of ferroelectric memory devices depending on the capacitor processes Kim, Jeong
 2001
 33 1-4 p. 133-143
 artikel
33 Segregation phenomena in thin films of BaTiO3 Szot, K.
 2001
 33 1-4 p. 303-310
 artikel
34 Strain induced ferroelectrosity in epitaxial SrTiO3 films Gevorgian, S.
 2001
 33 1-4 p. 311-321
 artikel
35 Structural and dielectric properties of BaTiO3SrTiO3-multilayers deposited by PLD Koebernik, G.
 2001
 33 1-4 p. 373-378
 artikel
36 The post annealing effects on ferroelectric properties of SrBi2Ta2O9 thin films prepared by R.F. magnetron sputtering Park, Sang-Shik
 2001
 33 1-4 p. 199-208
 artikel
37 The reliability properties of MOCVD PZT thin films on multilayer PT/IR electrodes Li, Tingkai
 2001
 33 1-4 p. 91-99
 artikel
38 The resistance degradation of (Ba0.5Sr0.5)TiO3 thin films Yan, F.
 2001
 33 1-4 p. 379-388
 artikel
39 Thickness dependence of the ferroelectric characteristics of SBT and SBTN thin films Park, Joo Dong
 2001
 33 1-4 p. 235-244
 artikel
40 Thickness effects on the physical properties in ferroelectric thin films Zhu, Jinsong
 2001
 33 1-4 p. 271-279
 artikel
                             40 gevonden resultaten
 
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