| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Addition of Ca and Sr in PLZT to improve fram® performance and reliability
|
Hadnagy, T. D.
|
|
1998
|
22 |
1-4 |
p. 183-193
|
artikel
|
| 2 |
A dynamic method for determining the pyroelectric response of thin films
|
Daglish, Marc
|
|
1998
|
22 |
1-4 |
p. 473-488
|
artikel
|
| 3 |
An accelerated reliability test for retention after fatigue in ferroelectric memory devices
|
Dalton, D. I.
|
|
1998
|
22 |
1-4 |
p. 195-204
|
artikel
|
| 4 |
Antiferroelectric thin and thick films for high-strain microactuators
|
Xu, Baomin
|
|
1998
|
22 |
1-4 |
p. 545-557
|
artikel
|
| 5 |
A time independent model for simulating switching current and hysteresis characteristics of PZT thin-film ferroelectric capacitors
|
Bartic, Theodor A.
|
|
1998
|
22 |
1-4 |
p. 171-181
|
artikel
|
| 6 |
Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications
|
Arita, K.
|
|
1998
|
22 |
1-4 |
p. 143-152
|
artikel
|
| 7 |
Chemical routes for low-temperature processing of layer-structured perovskite thin films
|
Kato, Kazumi
|
|
1998
|
22 |
1-4 |
p. 13-22
|
artikel
|
| 8 |
Chemical solution deposition (CSD) and characterization of ferroelectric and dielectric thin films
|
Solayappan, N.
|
|
1998
|
22 |
1-4 |
p. 1-11
|
artikel
|
| 9 |
Chemical solution deposition of SrBi2Ta2O9 (SBT) films for non-volatile memory applications
|
Lakeman, Charles D. E.
|
|
1998
|
22 |
1-4 |
p. 45-53
|
artikel
|
| 10 |
Compositional dependence of electrical properties in plzst thin films
|
Pai, Neelesh G.
|
|
1998
|
22 |
1-4 |
p. 501-513
|
artikel
|
| 11 |
Crystallographic orientation control for ferroelectric SBT and SBTN thin films from photosensitive mod solutions
|
Sun, Shan
|
|
1998
|
22 |
1-4 |
p. 55-63
|
artikel
|
| 12 |
Curie - Von Schweidler behaviour observed in ferroelectric thin films and comparison to superparaelectric thin film materials
|
Schumacher, M.
|
|
1998
|
22 |
1-4 |
p. 109-121
|
artikel
|
| 13 |
Detection of internal electric fields in BaTiO3 thin films by optical second harmonic generation
|
Rotter, Lawrence D.
|
|
1998
|
22 |
1-4 |
p. 153-170
|
artikel
|
| 14 |
Doped Ba0.6Sr0.4TiO3 thin films for microwave device applications at room temperature
|
Wu, Huey-Daw
|
|
1998
|
22 |
1-4 |
p. 291-305
|
artikel
|
| 15 |
Drying temperature effects on the electro-optic coefficients of PZT thin films
|
Lee, Changho
|
|
1998
|
22 |
1-4 |
p. 439-451
|
artikel
|
| 16 |
Electromechanical properties of PMN-PT thin films prepared by pulsed laser deposition technique
|
Kholkin, A.
|
|
1998
|
22 |
1-4 |
p. 515-523
|
artikel
|
| 17 |
Externally determined and intrinsic contributions to the polarization switching currents in SrBi2Ta2O9 thin films
|
Lohse, O.
|
|
1998
|
22 |
1-4 |
p. 123-131
|
artikel
|
| 18 |
Ferroelectrics as a versatile solid state platform for integrated optics
|
Gopalan, Venkatraman
|
|
1998
|
22 |
1-4 |
p. 465-471
|
artikel
|
| 19 |
Guest editorial
|
Auciello, Orlando
|
|
1998
|
22 |
1-4 |
p. 19-29
|
artikel
|
| 20 |
Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications
|
Grossmann, M.
|
|
1998
|
22 |
1-4 |
p. 95-107
|
artikel
|
| 21 |
Influence of the biasing scheme on the performance of Au/SrTiO3/LaAlO3 thin film conductor/ferroelectric tunable ring resonators
|
Van Keuls, F. W.
|
|
1998
|
22 |
1-4 |
p. 363-372
|
artikel
|
| 22 |
International symposium on integrated ferroelectrics
|
Panholzer, R.
|
|
1998
|
22 |
1-4 |
p. 31-47
|
artikel
|
| 23 |
Investigation of the effect of particle size on the 10 GHz microwave properties of Ba1-xSrxTiO3 / MgO composite ceramics
|
Synowczynski, J.
|
|
1998
|
22 |
1-4 |
p. 341-352
|
artikel
|
| 24 |
Mass spectroscopy of recoiled ion investigation of electrode segregation effects during the initial stages of SrBi2Ta2O9 film growth
|
Im, J.
|
|
1998
|
22 |
1-4 |
p. 223-235
|
artikel
|
| 25 |
Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer
|
Han, Jin-Ping
|
|
1998
|
22 |
1-4 |
p. 213-221
|
artikel
|
| 26 |
Microscopic observation of “region by region” polarisation domains freezing during fatigue of the Pt-PZT-Pt system
|
Colla, E. L.
|
|
1998
|
22 |
1-4 |
p. 237-244
|
artikel
|
| 27 |
Microwave properties of ferroelectric thin films
|
Pond, J. M.
|
|
1998
|
22 |
1-4 |
p. 317-328
|
artikel
|
| 28 |
(Mn,Sb) DOPED-Pb(Zr,Ti)O3/YBa2Cu3O7 heterostructure infrared detectors
|
Wu, Naijuan
|
|
1998
|
22 |
1-4 |
p. 489-500
|
artikel
|
| 29 |
Modeling of a thin film pyroelectric pixel: Steady state results
|
Teowee, G.
|
|
1998
|
22 |
1-4 |
p. 411-419
|
artikel
|
| 30 |
Modeling of a thin film pyroelectric pixel: Transient results
|
Teowee, G.
|
|
1998
|
22 |
1-4 |
p. 421-429
|
artikel
|
| 31 |
New potential applications of nonlinear dielectrics: Microwave solitons and stochastic resonance
|
Findikoglu, A. T.
|
|
1998
|
22 |
1-4 |
p. 259-268
|
artikel
|
| 32 |
Phased array antennas based on bulk phase shifting with ferroelectrics
|
Rao, Jaganmohan B. L.
|
|
1998
|
22 |
1-4 |
p. 307-316
|
artikel
|
| 33 |
Piezoelectric properties and micro structures of lead titanate thin films for GHz-band bulk acoustic wave filters
|
Yamada, Akira
|
|
1998
|
22 |
1-4 |
p. 353-361
|
artikel
|
| 34 |
PLZT: Precursor characterization and ferroelectric properties
|
Fe, Laura
|
|
1998
|
22 |
1-4 |
p. 35-43
|
artikel
|
| 35 |
Poling of pyroelectric thin films
|
Kohli, Markus
|
|
1998
|
22 |
1-4 |
p. 453-463
|
artikel
|
| 36 |
Processing and effects of annealing in sol-gel derived SrBi2Ta2O9 thin films
|
Barz, Robert
|
|
1998
|
22 |
1-4 |
p. 65-74
|
artikel
|
| 37 |
Pyroelectric and electronic properties of thick film and thin film Ba1-xSrxTiO3
|
Sengupta, L. C.
|
|
1998
|
22 |
1-4 |
p. 393-404
|
artikel
|
| 38 |
Pyroelectric IR-detector arrays based on sputtered PZT and spin-coated P(VDF/TrFE) thin films
|
Kohler, R.
|
|
1998
|
22 |
1-4 |
p. 383-392
|
artikel
|
| 39 |
Pyroelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios
|
Teowee, G.
|
|
1998
|
22 |
1-4 |
p. 431-438
|
artikel
|
| 40 |
Real-time study of kinetics of 180° domains in congruent LiTaO3 under an external field
|
Gopalan, Venkatraman
|
|
1998
|
22 |
1-4 |
p. 405-409
|
artikel
|
| 41 |
Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals
|
Grossmann, M.
|
|
1998
|
22 |
1-4 |
p. 83-94
|
artikel
|
| 42 |
Response time and power handling capability of tunable microwave devices using ferroelectric films
|
Kozyrev, A. B.
|
|
1998
|
22 |
1-4 |
p. 329-340
|
artikel
|
| 43 |
Role of recovery anneals for chemical solution deposition (CSD) based SrBi2Ta2O9 (SBT) thin films
|
Hartner, Walter
|
|
1998
|
22 |
1-4 |
p. 23-33
|
artikel
|
| 44 |
Self-polarization effect in Pb(Zr,Ti)O3 thin films
|
Kholkin, A. L.
|
|
1998
|
22 |
1-4 |
p. 525-533
|
artikel
|
| 45 |
Several microstrip-based conductor/thin film ferroelectric phase shifter designs using (YBa2Cu3O7-δ,Au)/SrTiO3/LaAlO3 structures
|
Van Keuls, F. W.
|
|
1998
|
22 |
1-4 |
p. 373-381
|
artikel
|
| 46 |
Structure/property relationships in ferroelectric thin films for frequency agile microwave electronics
|
Horwitz, J. S.
|
|
1998
|
22 |
1-4 |
p. 279-289
|
artikel
|
| 47 |
Thermally induced imprint properties of chemical solution derived PLZT thin films
|
Kim, Seung-Hyun
|
|
1998
|
22 |
1-4 |
p. 133-142
|
artikel
|
| 48 |
The role of leakge current on the memory window and memory retention in MFIS structure
|
Lim, M.
|
|
1998
|
22 |
1-4 |
p. 205-211
|
artikel
|
| 49 |
The role of rapid thermal processing in crsystallization of SBT thin films
|
Joshi, V.
|
|
1998
|
22 |
1-4 |
p. 75-81
|
artikel
|
| 50 |
Tunable microwave components for Ku-and K-band satellite communications
|
Miranda, F. A.
|
|
1998
|
22 |
1-4 |
p. 269-278
|
artikel
|
| 51 |
Tunable microwave devices based on bulk and thin film ferroelectrics
|
Gevorgian, Spartak
|
|
1998
|
22 |
1-4 |
p. 245-257
|
artikel
|
| 52 |
Which PZT thin films for piezoelectric microactuator applications?
|
Dubois, Marc-Alexandre
|
|
1998
|
22 |
1-4 |
p. 535-543
|
artikel
|
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