nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advanced simulation tool for FeRAM design
|
Chen, Zheng |
|
2001 |
|
1-5 |
p. 101-112 |
artikel |
2 |
Analysis of read-out operation in 1T2C-type ferroelectric memory cell
|
Ogasawara, Satoru |
|
2001 |
|
1-5 |
p. 83-92 |
artikel |
3 |
An improved behavioral model of ferroelectric capacitors
|
Li, Chun-Xiao |
|
2001 |
|
1-5 |
p. 93-100 |
artikel |
4 |
A nonvolatile single ferro fet memory concept with disturbance free operation scheme
|
Ullmann, Marc |
|
2001 |
|
1-5 |
p. 23-29 |
artikel |
5 |
A novel cell and array architecture for fet-type Ferroelectric nonvolatile memories
|
Zhang, Wu-Quan |
|
2001 |
|
1-5 |
p. 15-22 |
artikel |
6 |
Asymmetric capacitance-voltage characteristics of (Bi3.25, La0.75)Ti3O12 thin films grown on Si
|
Choi, Taekjib |
|
2001 |
|
1-5 |
p. 225-234 |
artikel |
7 |
Characterization of the CeO2 thin films for insulation layer and Pt/SrBi2Ta2O9/CeO2/Si MFISFET structure
|
Park, Sang-Shik |
|
2001 |
|
1-5 |
p. 191-199 |
artikel |
8 |
Circuit design issues affecting present and future deep sub-micron ferroelectric random-access memories
|
Rickes, Jurgen T. |
|
2001 |
|
1-5 |
p. 65-82 |
artikel |
9 |
Circuits simulation of switch devices furnished with gain cell combined to FeRAM
|
Koyama, Shinzo |
|
2001 |
|
1-5 |
p. 113-121 |
artikel |
10 |
Data disturb characteristics of 1T2C ferroelectric memory array
|
Yoon, Sung-Min |
|
2001 |
|
1-5 |
p. 31-40 |
artikel |
11 |
Deterioration of device characteristics of MFSFET due to fatigue
|
Lee, Kook Pyo |
|
2001 |
|
1-5 |
p. 235-244 |
artikel |
12 |
Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure
|
Takahashi, Mitsue |
|
2001 |
|
1-5 |
p. 125-134 |
artikel |
13 |
Effects of Ar post-annealing on the electrical properties of Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si
|
Yun, Kwi Young |
|
2001 |
|
1-5 |
p. 163-170 |
artikel |
14 |
Effects of nitridation treatments for SBT/Ta2O5 stack gate capacitors
|
Min, Hyungseob |
|
2001 |
|
1-5 |
p. 211-218 |
artikel |
15 |
Electronic model of a Ferroelectric Field Effect transistor
|
Macleod, Todd C. |
|
2001 |
|
1-5 |
p. 55-64 |
artikel |
16 |
Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory
|
Migita, S. |
|
2001 |
|
1-5 |
p. 135-143 |
artikel |
17 |
Fabrication of MFIS diodes using sol-gel derived SBT films and LaAlO3 buffer layers
|
Park, Byung-Eun |
|
2001 |
|
1-5 |
p. 201-209 |
artikel |
18 |
Ferroelectric nonvolatile logic
|
Eliason, Jarrod |
|
2001 |
|
1-5 |
p. 3-14 |
artikel |
19 |
Guest editorial
|
|
|
2001 |
|
1-5 |
p. 7-8 |
artikel |
20 |
High density and long retention non-destructive readout FeRAM using a linked cell architecture
|
Shimada, Y. |
|
2001 |
|
1-5 |
p. 41-54 |
artikel |
21 |
Hysteresis caused by defects in buffer layer of metal-ferroelectric-insulator-semiconductor (MFIS) devices
|
Kang, Dongseok |
|
2001 |
|
1-5 |
p. 245-254 |
artikel |
22 |
Integration and characterization of MFISFET using Pb5Ge3O11
|
Zhang, Fengyan |
|
2001 |
|
1-5 |
p. 145-154 |
artikel |
23 |
Low-temperature synthesis in vacuum of c-axis oriented ferroelectric YMnO3 thin films using alkoxy-derived precursors
|
Suzuki, Kazuyuki |
|
2001 |
|
1-5 |
p. 155-162 |
artikel |
24 |
MFIS and MFMIS structures using Pb(Zr, Ti)O3 films for nonvolatile memory devices
|
Park, Jung-Ho |
|
2001 |
|
1-5 |
p. 181-190 |
artikel |
25 |
Processing and characterization of LiNbO3 thin film for metal Ferroelectric Semiconductor field effect transistor (MFSFET) application
|
Wang, Xuguang |
|
2001 |
|
1-5 |
p. 171-180 |
artikel |
26 |
Study of Bi2TI2O7-based metal-ferroelectric-semiconductor (MFS) FET
|
Ren, Tian-Ling |
|
2001 |
|
1-5 |
p. 219-224 |
artikel |