| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Advanced strain engineering for state-of-the-art nanoscale CMOS technology
|
Yang, Bin (Frank)
|
|
2011
|
54 |
5 |
p. 946-958
|
article
|
| 2 |
3D integration review
|
Farooq, Mukta G.
|
|
2011
|
54 |
5 |
p. 1012-1025
|
article
|
| 3 |
Editor’s note
|
Ru, Huang
|
|
2011
|
54 |
5 |
p. 913-914
|
article
|
| 4 |
High power devices in wide bandgap semiconductors
|
Östling, Mikael
|
|
2011
|
54 |
5 |
p. 1087-1093
|
article
|
| 5 |
Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics
|
Ma, T. P.
|
|
2011
|
54 |
5 |
p. 980-989
|
article
|
| 6 |
Low power 3.1–10.6 GHz IR-UWB transmitter for Gbps wireless communications
|
Wang, Xin
|
|
2011
|
54 |
5 |
p. 1094-1102
|
article
|
| 7 |
Next-generation lithography for 22 and 16 nm technology nodes and beyond
|
Wu, Banqiu
|
|
2011
|
54 |
5 |
p. 959-979
|
article
|
| 8 |
Phase change memory
|
Li, Jing
|
|
2011
|
54 |
5 |
p. 1061-1072
|
article
|
| 9 |
Resistance switching for RRAM applications
|
Chen, Frederick T.
|
|
2011
|
54 |
5 |
p. 1073-1086
|
article
|
| 10 |
RF/wireless-interconnect: The next wave of connectivity
|
Tam, SaiWang
|
|
2011
|
54 |
5 |
p. 1026-1038
|
article
|
| 11 |
Si nanowire FET and its modeling
|
Iwai, Hiroshi
|
|
2011
|
54 |
5 |
p. 1004-1011
|
article
|
| 12 |
State-of-the-art flash memory devices and post-flash emerging memories
|
Lu, ChihYuan
|
|
2011
|
54 |
5 |
p. 1039-1060
|
article
|
| 13 |
The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption
|
Wang, YangYuan
|
|
2011
|
54 |
5 |
p. 915-935
|
article
|
| 14 |
Ultra-thin films and multigate devices architectures for future CMOS scaling
|
Deleonibus, Simon
|
|
2011
|
54 |
5 |
p. 990-1003
|
article
|
| 15 |
Variability in nanoscale CMOS technology
|
Kuhn, Kelin
|
|
2011
|
54 |
5 |
p. 936-945
|
article
|
Journal description