| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition
|
Sidorov, G. Yu.
|
|
|
56 |
5 |
p. 492-497
|
artikel
|
| 2 |
Etching Kinetics of Si(111) Surface by Selenium Molecular Beam
|
Ponomarev, S. A.
|
|
|
56 |
5 |
p. 449-455
|
artikel
|
| 3 |
Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator
|
Tarasov, A. S.
|
|
|
56 |
5 |
p. 553-557
|
artikel
|
| 4 |
From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology
|
Sheglov, D. V.
|
|
|
56 |
5 |
p. 533-544
|
artikel
|
| 5 |
Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation
|
Malin, T. V.
|
|
|
56 |
5 |
p. 485-491
|
artikel
|
| 6 |
Molecular Beam Epitaxy of CdHgTe: Current State and Horizons
|
Varavin, V. S.
|
|
|
56 |
5 |
p. 456-469
|
artikel
|
| 7 |
Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers
|
Emel’yanov, E. A.
|
|
|
56 |
5 |
p. 498-502
|
artikel
|
| 8 |
Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn
|
Deryabin, A. S.
|
|
|
56 |
5 |
p. 470-477
|
artikel
|
| 9 |
New Type of Heterostructures for Powerful pHEMT Transistors
|
Zhuravlev, K. S.
|
|
|
56 |
5 |
p. 478-484
|
artikel
|
| 10 |
Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors Nanocrystals
|
Milekhin, A. G.
|
|
|
56 |
5 |
p. 503-509
|
artikel
|
| 11 |
Properties of Quantum Wells and Their Application in Femtosecond Lasers Operating in Near IR Range with Sub GHz Pulse Repetition Rate
|
Rubtsova, N. N.
|
|
|
56 |
5 |
p. 527-532
|
artikel
|
| 12 |
Quantum Information Processing on the Basis of Single Ultracold Atoms in Optical Traps
|
Ryabtsev, I. I.
|
|
|
56 |
5 |
p. 510-517
|
artikel
|
| 13 |
Subminiature Light Sources Based on Semiconductor Nanostructures
|
Gaisler, V. A.
|
|
|
56 |
5 |
p. 518-526
|
artikel
|
| 14 |
Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates
|
Boev, M. V.
|
|
|
56 |
5 |
p. 545-552
|
artikel
|
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