no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Applicability of the six-band kp -model equations to semiconductor heterostructures
|
Zhukov, V. P. |
|
2013 |
49 |
5 |
p. 450-460 |
article |
2 |
Formation and structural features of silicon quantum dots in germanium
|
Stepina, N. P. |
|
2013 |
49 |
5 |
p. 434-439 |
article |
3 |
Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy
|
Zinov’ev, V. A. |
|
2013 |
49 |
5 |
p. 423-428 |
article |
4 |
Ge/Si heterostructures with Ge quantum dots for mid-infrared photodetectors
|
Yakimov, A. I. |
|
2013 |
49 |
5 |
p. 467-475 |
article |
5 |
Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al2O3 substrates
|
Malin, T. V. |
|
2013 |
49 |
5 |
p. 429-433 |
article |
6 |
HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12 µm spectral ranges
|
Varavin, V. S. |
|
2013 |
49 |
5 |
p. 476-484 |
article |
7 |
High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy
|
Predein, A. V. |
|
2013 |
49 |
5 |
p. 485-491 |
article |
8 |
Microsecond Lifetime of Exciton Spin Polarization in (In,Al)As/AlAs Quantum Dots
|
Shamirzaev, T. S. |
|
2013 |
49 |
5 |
p. 514-519 |
article |
9 |
SOI nanowire transistor for detection of D-NFATc1 molecules
|
Ivanov, Yu. D. |
|
2013 |
49 |
5 |
p. 520-525 |
article |
10 |
Spectroscopy of single InAs quantum dots
|
Gaisler, A. V. |
|
2013 |
49 |
5 |
p. 498-503 |
article |
11 |
Surface-enhanced Raman scattering by semiconductor nanostructures
|
Milekhin, A. G. |
|
2013 |
49 |
5 |
p. 504-513 |
article |
12 |
Terahertz detectors based on Pb1−xSnxTe:In films
|
Akimov, A. N. |
|
2013 |
49 |
5 |
p. 492-497 |
article |
13 |
Three-dimensional model of heteroepitaxial growth of germanium on silicon
|
Rudin, S. A. |
|
2013 |
49 |
5 |
p. 461-466 |
article |
14 |
Two-dimensional strain distribution in elastically anisotropic heterostructures
|
Nenashev, A. V. |
|
2013 |
49 |
5 |
p. 440-449 |
article |