| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab-initio Calculation of Electronic and Magnetic Properties of Mn1−xCrxTe
|
Long, Nguyen Hoang
|
|
2007
|
20 |
6 |
p. 473-478
|
artikel
|
| 2 |
Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures
|
Endo, M.
|
|
2007
|
20 |
6 |
p. 409-411
|
artikel
|
| 3 |
Comparison of the Mid-Infrared Magneto-Optical Response of Ga1−xMnxAs Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting
|
Acbas, G.
|
|
2007
|
20 |
6 |
p. 457-460
|
artikel
|
| 4 |
Detailed Measurements of Nuclear Spin Polarizations in a Single InAlAs Quantum Dot Through Overhauser Shift of Photoluminescence
|
Kaji, R.
|
|
2007
|
20 |
6 |
p. 447-451
|
artikel
|
| 5 |
Domain Wall Dynamics in Annealed GaMnAs Epilayers
|
Dourlat, A.
|
|
2007
|
20 |
6 |
p. 453-455
|
artikel
|
| 6 |
Electrical Manipulation of Spin Injection into a Single InAs Quantum Dots
|
Ghali, M.
|
|
2007
|
20 |
6 |
p. 413-416
|
artikel
|
| 7 |
Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature
|
Sinsarp, Asawin
|
|
2007
|
20 |
6 |
p. 405-408
|
artikel
|
| 8 |
Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers
|
Sobolev, N. A.
|
|
2007
|
20 |
6 |
p. 399-403
|
artikel
|
| 9 |
High Gd Concentration GaGdN Grown at Low Temperatures
|
Zhou, Yi Kai
|
|
2007
|
20 |
6 |
p. 429-432
|
artikel
|
| 10 |
Preface
|
Awschalom, David
|
|
2007
|
20 |
6 |
p. 397
|
artikel
|
| 11 |
Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K
|
Ohno, Kenichi
|
|
2007
|
20 |
6 |
p. 417-420
|
artikel
|
| 12 |
Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction
|
Okabayashi, J.
|
|
2007
|
20 |
6 |
p. 443-446
|
artikel
|
| 13 |
Soft X-ray Magnetic Circular Dichroism and Photoemission Studies of II–VI Diluted Ferromagnetic Semiconductor Zn1−xCrxTe
|
Kobayashi, M.
|
|
2007
|
20 |
6 |
p. 467-471
|
artikel
|
| 14 |
Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers
|
Litvinenko, K. L.
|
|
2007
|
20 |
6 |
p. 461-465
|
artikel
|
| 15 |
The Influence of Device Geometry on Many-Body Effects in Quantum Point Contacts: Signatures of the 0.7 Anomaly, Exchange and Kondo
|
Koop, E. J.
|
|
2007
|
20 |
6 |
p. 433-441
|
artikel
|
| 16 |
The Non-Metal-to-Metal and Vice-Versa Transitions in a GaMnAs Layer
|
Dias Cabral, E.
|
|
2007
|
20 |
6 |
p. 421-427
|
artikel
|
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