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                             25 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Admittance spectroscopy of solar cells based on GaPNAs layers Baranov, A. I.
2015
49 4 p. 524-528
artikel
2 A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT Pandey, Devashish
2015
49 4 p. 513-518
artikel
3 Anisotropic shaping of macroporous silicon Astrova, E. V.
2015
49 4 p. 551-558
artikel
4 Conditions of steady switching in phase-transition memory cells Popov, A. I.
2015
49 4 p. 498-503
artikel
5 Development of a differential method for analyzing the luminescence spectra of semiconductors Emel’yanov, A. M.
2015
49 4 p. 452-455
artikel
6 Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures Shamirzaev, T. S.
2015
49 4 p. 508-512
artikel
7 Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors Tkach, N. V.
2015
49 4 p. 529-539
artikel
8 Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals Tagiev, O. B.
2015
49 4 p. 448-451
artikel
9 Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide Goldman, E. I.
2015
49 4 p. 472-478
artikel
10 Formation of S2 “quasi-molecules” in sulfur-doped silicon Shuman, V. B.
2015
49 4 p. 421-422
artikel
11 Irradiation of 4H-SiC UV detectors with heavy ions Kalinina, E. V.
2015
49 4 p. 540-546
artikel
12 Liquid-phase epitaxy of the (Si2)1 − x − y(Ge2)x(GaAs)y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties Saidov, A. S.
2015
49 4 p. 547-550
artikel
13 Low-temperature conductivity in CuGaS2 single crystals Abdullaev, N. A.
2015
49 4 p. 428-431
artikel
14 MBE growth of GaP on a Si substrate Sobolev, M. S.
2015
49 4 p. 559-562
artikel
15 On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter Parshin, A. S.
2015
49 4 p. 423-427
artikel
16 Photoluminescence of heterostructures with GaP1 − xNx and GaP1 − x − yNxAsy layers grown on GaP and Si substrates by molecular-beam epitaxy Lazarenko, A. A.
2015
49 4 p. 479-482
artikel
17 Plasma waves in a graphene-based superlattice in the presence of a high static electric field Glazov, S. Yu.
2015
49 4 p. 504-507
artikel
18 Quantum Hall effect in semiconductor systems with quantum dots and antidots Beltukov, Ya. M.
2015
49 4 p. 483-491
artikel
19 Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals Gert, A. V.
2015
49 4 p. 492-497
artikel
20 Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms Ormont, M. A.
2015
49 4 p. 437-441
artikel
21 Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods Alpatov, A. V.
2015
49 4 p. 456-460
artikel
22 Surface-barrier photoconverters with graded-gap layers in the space-charge region Bobrenko, Yu. N.
2015
49 4 p. 519-523
artikel
23 Surface plasmon polaritons in a composite system of porous silicon and gold Vainshtein, J. S.
2015
49 4 p. 442-447
artikel
24 Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes Bazhenov, N. L.
2015
49 4 p. 432-436
artikel
25 Temperature dependences of the contact resistivity in ohmic contacts to n+-InN Sachenko, A. V.
2015
49 4 p. 461-471
artikel
                             25 gevonden resultaten
 
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