nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Admittance spectroscopy of solar cells based on GaPNAs layers
|
Baranov, A. I. |
|
2015 |
49 |
4 |
p. 524-528 |
artikel |
2 |
A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT
|
Pandey, Devashish |
|
2015 |
49 |
4 |
p. 513-518 |
artikel |
3 |
Anisotropic shaping of macroporous silicon
|
Astrova, E. V. |
|
2015 |
49 |
4 |
p. 551-558 |
artikel |
4 |
Conditions of steady switching in phase-transition memory cells
|
Popov, A. I. |
|
2015 |
49 |
4 |
p. 498-503 |
artikel |
5 |
Development of a differential method for analyzing the luminescence spectra of semiconductors
|
Emel’yanov, A. M. |
|
2015 |
49 |
4 |
p. 452-455 |
artikel |
6 |
Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures
|
Shamirzaev, T. S. |
|
2015 |
49 |
4 |
p. 508-512 |
artikel |
7 |
Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors
|
Tkach, N. V. |
|
2015 |
49 |
4 |
p. 529-539 |
artikel |
8 |
Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals
|
Tagiev, O. B. |
|
2015 |
49 |
4 |
p. 448-451 |
artikel |
9 |
Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide
|
Goldman, E. I. |
|
2015 |
49 |
4 |
p. 472-478 |
artikel |
10 |
Formation of S2 “quasi-molecules” in sulfur-doped silicon
|
Shuman, V. B. |
|
2015 |
49 |
4 |
p. 421-422 |
artikel |
11 |
Irradiation of 4H-SiC UV detectors with heavy ions
|
Kalinina, E. V. |
|
2015 |
49 |
4 |
p. 540-546 |
artikel |
12 |
Liquid-phase epitaxy of the (Si2)1 − x − y(Ge2)x(GaAs)y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties
|
Saidov, A. S. |
|
2015 |
49 |
4 |
p. 547-550 |
artikel |
13 |
Low-temperature conductivity in CuGaS2 single crystals
|
Abdullaev, N. A. |
|
2015 |
49 |
4 |
p. 428-431 |
artikel |
14 |
MBE growth of GaP on a Si substrate
|
Sobolev, M. S. |
|
2015 |
49 |
4 |
p. 559-562 |
artikel |
15 |
On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter
|
Parshin, A. S. |
|
2015 |
49 |
4 |
p. 423-427 |
artikel |
16 |
Photoluminescence of heterostructures with GaP1 − xNx and GaP1 − x − yNxAsy layers grown on GaP and Si substrates by molecular-beam epitaxy
|
Lazarenko, A. A. |
|
2015 |
49 |
4 |
p. 479-482 |
artikel |
17 |
Plasma waves in a graphene-based superlattice in the presence of a high static electric field
|
Glazov, S. Yu. |
|
2015 |
49 |
4 |
p. 504-507 |
artikel |
18 |
Quantum Hall effect in semiconductor systems with quantum dots and antidots
|
Beltukov, Ya. M. |
|
2015 |
49 |
4 |
p. 483-491 |
artikel |
19 |
Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals
|
Gert, A. V. |
|
2015 |
49 |
4 |
p. 492-497 |
artikel |
20 |
Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms
|
Ormont, M. A. |
|
2015 |
49 |
4 |
p. 437-441 |
artikel |
21 |
Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods
|
Alpatov, A. V. |
|
2015 |
49 |
4 |
p. 456-460 |
artikel |
22 |
Surface-barrier photoconverters with graded-gap layers in the space-charge region
|
Bobrenko, Yu. N. |
|
2015 |
49 |
4 |
p. 519-523 |
artikel |
23 |
Surface plasmon polaritons in a composite system of porous silicon and gold
|
Vainshtein, J. S. |
|
2015 |
49 |
4 |
p. 442-447 |
artikel |
24 |
Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes
|
Bazhenov, N. L. |
|
2015 |
49 |
4 |
p. 432-436 |
artikel |
25 |
Temperature dependences of the contact resistivity in ohmic contacts to n+-InN
|
Sachenko, A. V. |
|
2015 |
49 |
4 |
p. 461-471 |
artikel |