| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
|
Zakgeim, A. L.
|
|
2010
|
44 |
3 |
p. 373-379
|
artikel
|
| 2 |
A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements
|
Bogatyrenko, V. V.
|
|
2010
|
44 |
3 |
p. 392-395
|
artikel
|
| 3 |
Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films
|
Dmitriev, A. I.
|
|
2010
|
44 |
3 |
p. 303-308
|
artikel
|
| 4 |
Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films
|
Anisimov, O. V.
|
|
2010
|
44 |
3 |
p. 366-372
|
artikel
|
| 5 |
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
|
Novikov, A. V.
|
|
2010
|
44 |
3 |
p. 329-334
|
artikel
|
| 6 |
Effect of thermal oxidation on charge carrier transport in nanostructured silicon
|
Agafonova, E. A.
|
|
2010
|
44 |
3 |
p. 350-353
|
artikel
|
| 7 |
Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm)
|
Mezdrogina, M. M.
|
|
2010
|
44 |
3 |
p. 321-328
|
artikel
|
| 8 |
Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals
|
Romaka, V. A.
|
|
2010
|
44 |
3 |
p. 293-302
|
artikel
|
| 9 |
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
|
Sadofyev, Yu. G.
|
|
2010
|
44 |
3 |
p. 405-412
|
artikel
|
| 10 |
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
|
Poklonski, N. A.
|
|
2010
|
44 |
3 |
p. 380-384
|
artikel
|
| 11 |
Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
|
Kucherova, O. V.
|
|
2010
|
44 |
3 |
p. 335-340
|
artikel
|
| 12 |
Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation
|
Kyazym-zade, A. G.
|
|
2010
|
44 |
3 |
p. 289-292
|
artikel
|
| 13 |
Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS
|
Il’chuk, G. A.
|
|
2010
|
44 |
3 |
p. 318-320
|
artikel
|
| 14 |
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties
|
Nikolaev, Yu. A.
|
|
2010
|
44 |
3 |
p. 354-358
|
artikel
|
| 15 |
Precipitation of boron in silicon on high-dose implantation
|
Feklistov, K. V.
|
|
2010
|
44 |
3 |
p. 285-288
|
artikel
|
| 16 |
Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment
|
Lissotschenko, V. N.
|
|
2010
|
44 |
3 |
p. 309-312
|
artikel
|
| 17 |
Reliability estimate for semiconductor laser module ILPN-134
|
Zhuravleva, O. V.
|
|
2010
|
44 |
3 |
p. 359-365
|
artikel
|
| 18 |
Secondary cluster ions Ge2− and Ge3−for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
|
Drozdov, M. N.
|
|
2010
|
44 |
3 |
p. 401-404
|
artikel
|
| 19 |
Self-diffusion parameters in carbon-subgroup crystals
|
Magomedov, M. N.
|
|
2010
|
44 |
3 |
p. 271-284
|
artikel
|
| 20 |
Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm
|
Kuznetsov, V. P.
|
|
2010
|
44 |
3 |
p. 385-391
|
artikel
|
| 21 |
Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature
|
Usmonov, Sh. N.
|
|
2010
|
44 |
3 |
p. 313-317
|
artikel
|
| 22 |
Sublimation molecular beam epitaxy of silicon-based structures
|
Kuznetsov, V. P.
|
|
2010
|
44 |
3 |
p. 396-400
|
artikel
|
| 23 |
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures
|
Gulyaev, D. V.
|
|
2010
|
44 |
3 |
p. 341-349
|
artikel
|
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