| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for measuring the lifetime of charge carriers in the base regions of high-speed diode structures
|
Togatov, V. V.
|
|
2005
|
39 |
3 |
p. 360-363
|
artikel
|
| 2 |
A model for describing hole scattering at GaAs/AlAs(001) heterointerfaces
|
Karavaev, G. F.
|
|
2005
|
39 |
3 |
p. 317-324
|
artikel
|
| 3 |
A new physical mechanism for the formation of critical turn-on charge in thyristor structures
|
Mnatsakanov, T. T.
|
|
2005
|
39 |
3 |
p. 354-359
|
artikel
|
| 4 |
A quasi-classical description of the conductivity oscillations in layered crystals under the condition of charge-carrier scattering by acoustic phonons
|
Gorskii, P. V.
|
|
2005
|
39 |
3 |
p. 325-330
|
artikel
|
| 5 |
A review of the book Atomy legiruyushchikh primese$$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$v poluprovodnikakh (Atoms of doping impurities in semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004)
|
Mil’vidskii, M. G.
|
|
2005
|
39 |
3 |
p. 374-375
|
artikel
|
| 6 |
Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations
|
Persheyev, S. K.
|
|
2005
|
39 |
3 |
p. 343-346
|
artikel
|
| 7 |
A vacancy model of the heteropolytype epitaxy of SiC
|
Lebedev, A. A.
|
|
2005
|
39 |
3 |
p. 277-280
|
artikel
|
| 8 |
Cationic disorder in an Sr2FeMoO6 binary oxide with a perovskite structure
|
Lobanovskii, L. S.
|
|
2005
|
39 |
3 |
p. 273-276
|
artikel
|
| 9 |
Depolarization in a metal-p-ferroelectric-n-semiconductor structure
|
Berman, L. S.
|
|
2005
|
39 |
3 |
p. 313-316
|
artikel
|
| 10 |
High-power laser diodes based on asymmetric separate-confinement heterostructures
|
Vinokurov, D. A.
|
|
2005
|
39 |
3 |
p. 370-373
|
artikel
|
| 11 |
Internal friction in semiconductor thin films grown using sol-gel technology
|
Il’in, A. S.
|
|
2005
|
39 |
3 |
p. 281-284
|
artikel
|
| 12 |
Reflection spectra of two polymorphic modifications of cadmium arsenide
|
Kozlov, A. I.
|
|
2005
|
39 |
3 |
p. 285-288
|
artikel
|
| 13 |
Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition
|
Strokan, N. B.
|
|
2005
|
39 |
3 |
p. 364-369
|
artikel
|
| 14 |
Spectroscopic parameters of the absorption bands related to the local vibrational modes of carbon and oxygen impurities in silicon enriched with 28Si, 29Si, and 30Si isotopes
|
Sennikov, P. G.
|
|
2005
|
39 |
3 |
p. 300-307
|
artikel
|
| 15 |
Statistics of electrons in PbS with U centers
|
Nemov, S. A.
|
|
2005
|
39 |
3 |
p. 289-292
|
artikel
|
| 16 |
The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation
|
Ardyshev, M. V.
|
|
2005
|
39 |
3 |
p. 293-295
|
artikel
|
| 17 |
The charge-transport mechanisms and photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 structures
|
Il’chuk, G. A.
|
|
2005
|
39 |
3 |
p. 331-335
|
artikel
|
| 18 |
The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium
|
Biryukov, A. V.
|
|
2005
|
39 |
3 |
p. 351-353
|
artikel
|
| 19 |
The effect of pressing on the luminescent properties of ZnS:Ga powders
|
Bacherikov, Yu. Yu.
|
|
2005
|
39 |
3 |
p. 296-299
|
artikel
|
| 20 |
The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt
|
Voronina, T. I.
|
|
2005
|
39 |
3 |
p. 308-312
|
artikel
|
| 21 |
The role of boron impurity in the activation of free charge carriers in layers of porous silicon during the adsorption of acceptor molecules
|
Osminkina, L. A.
|
|
2005
|
39 |
3 |
p. 347-350
|
artikel
|
| 22 |
Vegard’s law and superstructural phases in AlxGa1−xAs/GaAs(100) epitaxial heterostructures
|
Domashevskaya, É. P.
|
|
2005
|
39 |
3 |
p. 336-342
|
artikel
|
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