| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Comprehensive Study of Nonuniformity Properties of the LiCoO2 Thin-Film Cathode Fabricated by RF Sputtering
|
Kurbatov, S. V.
|
|
|
53 |
3 |
p. 202-216
|
artikel
|
| 2 |
Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
|
Gusev, A. S.
|
|
|
53 |
3 |
p. 252-259
|
artikel
|
| 3 |
Design a Configurable First Order Universal Filter Using a Single EX-CCCII
|
Deepak Agrawal,
|
|
|
53 |
3 |
p. 290-296
|
artikel
|
| 4 |
Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel
|
Alyabina, N. A.
|
|
|
53 |
3 |
p. 197-201
|
artikel
|
| 5 |
How Memristor Device Records Memory Signal: Electromagnetic Study through an Equivalent Setup
|
Hassan Ali,
|
|
|
53 |
3 |
p. 276-289
|
artikel
|
| 6 |
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma
|
Murin, D. B.
|
|
|
53 |
3 |
p. 245-251
|
artikel
|
| 7 |
Influence of Laser Radiation on Functional Properties MOS Device Structures
|
Rekhviashvili, S. Sh.
|
|
|
53 |
3 |
p. 230-236
|
artikel
|
| 8 |
Kinetics of Electromigration Mass Transfer in the Interface Elements of Micro- and Nanoelectronics Depending on the Strength of Thin-Film Connections
|
Makhviladze, T. M.
|
|
|
53 |
3 |
p. 260-267
|
artikel
|
| 9 |
Simulation of Silicon Field-Effect Conical GAA Nanotransistors with a Stacked SiO2/HfO2 Subgate Dielectric
|
Masal’skii, N. V.
|
|
|
53 |
3 |
p. 237-244
|
artikel
|
| 10 |
Structure and Formation of Superflash Nonvolatile Memory Cells
|
Abdullaev, D. A.
|
|
|
53 |
3 |
p. 217-229
|
artikel
|
| 11 |
Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs
|
Kagadey, V. A.
|
|
|
53 |
3 |
p. 268-275
|
artikel
|
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