nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure
|
Sirotkin, V. V. |
|
|
52 |
5 |
p. 363-371 |
artikel |
2 |
An Overview of the NBTI Phenomenon in MOS Devices
|
DhiaElhak Messaoud, |
|
|
52 |
5 |
p. 439-468 |
artikel |
3 |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures
|
Mordvintsev, V. M. |
|
|
52 |
5 |
p. 419-428 |
artikel |
4 |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane
|
Murin, D. B. |
|
|
52 |
5 |
p. 337-343 |
artikel |
5 |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
|
Novoselov, A. S. |
|
|
52 |
5 |
p. 411-418 |
artikel |
6 |
Neuromorphic Systems: Devices, Architecture, and Algorithms
|
Fetisenkova, K. A. |
|
|
52 |
5 |
p. 393-410 |
artikel |
7 |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements
|
Prokaznikov, A. V. |
|
|
52 |
5 |
p. 379-392 |
artikel |
8 |
Protective Free-Standing Films for Projection Lithography Installations in the Extreme UV Range
|
Zuev, S. Yu. |
|
|
52 |
5 |
p. 344-355 |
artikel |
9 |
Simulation of the Effect of Lattice Defects on the Work of Joined Materials Separation
|
Makhviladze, T. M. |
|
|
52 |
5 |
p. 356-362 |
artikel |
10 |
Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique
|
Abdelmadjid Benabdelmoumene, |
|
|
52 |
5 |
p. 429-438 |
artikel |
11 |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
|
Efremov, A. M. |
|
|
52 |
5 |
p. 372-378 |
artikel |