nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
|
Efremov, A. M. |
|
|
52 |
4 |
p. 267-275 |
artikel |
2 |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature
|
Saenko, A. V. |
|
|
52 |
4 |
p. 297-302 |
artikel |
3 |
Formation of Polymer Threads with a Nanosized Aluminum Topology
|
Maltsev, P. P. |
|
|
52 |
4 |
p. 312-316 |
artikel |
4 |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film
|
Kuznetsova, I. A. |
|
|
52 |
4 |
p. 233-252 |
artikel |
5 |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes
|
Koval’chuk, N. S. |
|
|
52 |
4 |
p. 276-282 |
artikel |
6 |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition
|
Fadeev, A. V. |
|
|
52 |
4 |
p. 303-311 |
artikel |
7 |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films
|
Tulina, N. A. |
|
|
52 |
4 |
p. 283-289 |
artikel |
8 |
Optoelectronic Properties of Benzimidazobenzophenanthroline Thin Film
|
Dyari Mustafa Mamand, |
|
|
52 |
4 |
p. 325-336 |
artikel |
9 |
Polymer Liners with Cu-MWCNT based HCTSVs to Reduce Crosstalk Effects
|
Katepogu Rajkumar, |
|
|
52 |
4 |
p. 317-324 |
artikel |
10 |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric
|
Masalskii, N. V. |
|
|
52 |
4 |
p. 228-232 |
artikel |
11 |
Single Event Displacement Effects in a VLSI
|
Chumakov, A. I. |
|
|
52 |
4 |
p. 260-266 |
artikel |
12 |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation
|
Glushko, A. A. |
|
|
52 |
4 |
p. 253-259 |
artikel |
13 |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation
|
Evstafieva, M. V. |
|
|
52 |
4 |
p. 290-296 |
artikel |
14 |
Tomography of Detectors Taking Dead Time into Account
|
Bogdanov, Yu. I. |
|
|
52 |
4 |
p. 221-227 |
artikel |