| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Amorphization of Vanadium Oxides during the Reversible Insertion of Lithium
|
Skundin, A. M.
|
|
|
49 |
6 |
p. 416-422
|
article
|
| 2 |
Effect of Point Defects on the Electromigration Rate at the Interface of Joined Materials
|
Makhviladze, T. M.
|
|
|
49 |
6 |
p. 423-430
|
article
|
| 3 |
Injection Diffusion-Drift Pulse Former
|
Gaev, D. S.
|
|
|
49 |
6 |
p. 411-415
|
article
|
| 4 |
Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2
|
Efremov, A. M.
|
|
|
49 |
6 |
p. 379-384
|
article
|
| 5 |
Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range
|
Gnatyuk, D. L.
|
|
|
49 |
6 |
p. 404-410
|
article
|
| 6 |
Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 –x (0 ≤ х ≤ 1)
|
Asadov, S. M.
|
|
|
49 |
6 |
p. 452-465
|
article
|
| 7 |
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
|
Egorkin, V. I.
|
|
|
49 |
6 |
p. 445-451
|
article
|
| 8 |
Spots Concept for Problems of Artificial Intelligence and Algorithms of Neuromorphic Systems
|
Simonov, N. A.
|
|
|
49 |
6 |
p. 431-444
|
article
|
| 9 |
Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors
|
Ismailov, T. A.
|
|
|
49 |
6 |
p. 385-388
|
article
|
| 10 |
Thermal Atomic Layer Deposition of TiNx Using TiCl4 and N2H4
|
Abdulagatov, A. I.
|
|
|
49 |
6 |
p. 389-403
|
article
|
Journal description