| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation
|
Vyurkov, V. V.
|
|
2018
|
47 |
5 |
p. 290-298
|
artikel
|
| 2 |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
|
Kudrya, V. P.
|
|
2018
|
47 |
5 |
p. 332-343
|
artikel
|
| 3 |
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser
|
Tsukanov, A. V.
|
|
2018
|
47 |
5 |
p. 279-289
|
artikel
|
| 4 |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel
|
Vlasov, A. I.
|
|
2018
|
47 |
5 |
p. 299-306
|
artikel
|
| 5 |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism
|
Uvarov, I. V.
|
|
2018
|
47 |
5 |
p. 307-316
|
artikel
|
| 6 |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension
|
Myakonkikh, A. V.
|
|
2018
|
47 |
5 |
p. 323-331
|
artikel
|
| 7 |
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates
|
Batalov, R. I.
|
|
2018
|
47 |
5 |
p. 354-363
|
artikel
|
| 8 |
Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures
|
Benediktov, A. S.
|
|
2018
|
47 |
5 |
p. 317-322
|
artikel
|
| 9 |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer
|
Makhviladze, T. M.
|
|
2018
|
47 |
5 |
p. 344-353
|
artikel
|
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